MSM5116800C-70TS-L [OKI]
2,097,152-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE; 2,097,152字×8位动态RAM :快速页面模式类型型号: | MSM5116800C-70TS-L |
厂家: | OKI ELECTRONIC COMPONETS |
描述: | 2,097,152-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE |
文件: | 总16页 (文件大小:480K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
E2G0110-18-42
Preliminary
This version: Apr. 1998
¡ Semiconductor
MSM5116800C
2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
TheMSM5116800Cisa2,097,152-word ¥8-bitdynamicRAMfabricatedinOki'ssilicon-gateCMOS
technology. The MSM5116800C achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MSM5116800C is available in a 28-pin plastic SOJ or 28-pin plastic TSOP.
FEATURES
• 2,097,152-word ¥ 8-bit configuration
• Single 5 V power supply, ±10% tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 4096 cycles/64 ms
• Fast page mode, read modify write capability
• CAS before RAS refresh, hidden refresh, RAS-only refresh capability
• Multi-bit test mode capability
• Package options:
28-pin 400 mil plastic SOJ
28-pin 400 mil plastic TSOP
(SOJ28-P-400-1.27)
(Product : MSM5116800C-xxJS)
(TSOPII28-P-400-1.27-K) (Product : MSM5116800C-xxTS-K)
(TSOPII28-P-400-1.27-L) (Product : MSM5116800C-xxTS-L)
xx indicates speed rank.
PRODUCT FAMILY
Access Time (Max.)
Cycle Time
(Min.)
Power Dissipation
Family
tRAC tAA tCAC tOEA
50 ns 25 ns 13 ns 13 ns
60 ns 30 ns 15 ns 15 ns
70 ns 35 ns 20 ns 20 ns
Standby (Max.)
Operating (Max.)
MSM5116800C-50
MSM5116800C-60
MSM5116800C-70
90 ns
110 ns
130 ns
550 mW
495 mW
440 mW
5.5 mW
1/16
¡ Semiconductor
MSM5116800C
PIN CONFIGURATION (TOP VIEW)
VCC
1
28 VSS
27 DQ8
26 DQ7
25 DQ6
24 DQ5
23 CAS
22 OE
VCC
1
28 VSS
27 DQ8
26 DQ7
25 DQ6
24 DQ5
23 CAS
22 OE
21 A9R
20 A8
VSS 28
DQ8 27
DQ7 26
DQ6 25
DQ5 24
CAS 23
OE 22
1
2
3
4
5
6
7
8
9
VCC
DQ1 2
DQ2 3
DQ3 4
DQ4 5
WE 6
DQ1 2
DQ2 3
DQ3 4
DQ4 5
WE 6
DQ1
DQ2
DQ3
DQ4
WE
RAS 7
A11R 8
A10R 9
A0 10
RAS 7
RAS
A11R
A10R
21 A9R A11R 8
A9R 21
A8 20
20 A8
19 A7
18 A6
17 A5
16 A4
15 VSS
A10R 9
A0 10
A1 11
A2 12
A3 13
VCC 14
19 A7
A7 19
10 A0
11 A1
12 A2
13 A3
14 VCC
A1 11
18 A6
A6 18
A2 12
17 A5
A5 17
A3 13
16 A4
A4 16
VCC 14
15 VSS
VSS 15
28-Pin Plastic SOJ
28-Pin Plastic TSOP
(K Type)
28-Pin Plastic TSOP
(L Type)
Pin Name
A0 - A8,
A9R - A11R
RAS
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Input/Data Output
Output Enable
CAS
DQ1 - DQ8
OE
WE
Write Enable
VCC
Power Supply (5 V)
Ground (0 V)
VSS
Note :
The same power supply voltage must be provided to every V pin, and the same GND
CC
voltage level must be provided to every V pin.
SS
2/16
¡ Semiconductor
MSM5116800C
BLOCK DIAGRAM
WE
OE
Timing
Generator
RAS
I/O
Controller
Output
Buffers
8
8
8
CAS
DQ1 - DQ8
8
Column
Address
Buffers
Input
Buffers
Column Decoders
9
9
I/O
Selector
Internal
Address
Counter
Sense Amplifiers
8
8
Refresh
Control Clock
A0 - A8
9
3
Row
Address
Buffers
Row
Memory
Cells
12
Deco-
Word
Drivers
ders
A9R - A11R
VCC
On Chip
V
Generator
BB
On Chip
IV Generator
CC
VSS
3/16
¡ Semiconductor
MSM5116800C
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to VSS
Voltage on VCC Supply Relative to VSS
Short Circuit Output Current
Power Dissipation
Symbol
VIN, VOUT
VCC
Rating
–0.5 to VCC + 0.5
–0.5 to 7
50
Unit
V
V
IOS
mA
W
PD
*
1
Operating Temperature
Topr
Tstg
0 to 70
°C
°C
Storage Temperature
–55 to 150
*: Ta = 25°C
Recommended Operating Conditions
(Ta = 0°C to 70°C)
Parameter
Power Supply Voltage
Symbol
VCC
Min.
4.5
Typ.
5.0
0
Max.
5.5
0
Unit
V
VSS
0
V
Input High Voltage
Input Low Voltage
VIH
2.4
–0.5*2
—
VCC + 0.5*1
V
V
VIL
—
0.8
Notes : *1. TheinputvoltageisV +2.0Vwhenthepulsewidthislessthan20ns(thepulsewidth
CC
is with respect to the point at which V is applied).
CC
*2. TheinputvoltageisV –2.0Vwhenthepulsewidthislessthan20ns(thepulsewidth
SS
is with respect to the point at which V is applied).
SS
Capacitance
(VCC = 5 V 10ꢀ, Ta = 25°C, f = 1 MHꢁ)
Parameter
Symbol
Typ.
Max.
Unit
Input Capacitance
(A0 - A8, A9R - A11R)
CIN1
—
5
pF
Input Capacitance (RAS, CAS, WE, OE)
CIN2
CI/O
—
—
7
7
pF
pF
Output Capacitance (DQ1 - DQ8)
4/16
¡ Semiconductor
MSM5116800C
DC Characteristics
(VCC = 5 V 10ꢀ, Ta = 0°C to 70°C)
MSM5116800 MSM5116800 MSM5116800
C-50 C-60 C-70
Parameter
Symbol
Condition
Unit Note
Min. Max. Min. Max. Min. Max.
Output High Voltage
Output Low Voltage
VOH IOH = –5.0 mA
2.4
0
VCC
0.4
2.4
0
VCC
0.4
2.4
0
VCC
0.4
V
V
VOL
IOL = 4.2 mA
0 V £ VI £ 6.5 V;
Input Leakage Current
ILI All other pins not
under test = 0 V
–10
–10
—
10
10
–10
–10
—
10
10
90
–10
–10
—
10
10
80
mA
DQ disable
ILO
Output Leakage Current
mA
0 V £ VO £ VCC
Average Power
Supply Current
(Operating)
RAS, CAS cycling,
ICC1
100
mA 1, 2
t
RC = Min.
—
—
2
1
—
—
2
1
—
—
2
1
RAS, CAS = VIH
ICC2 RAS, CAS
Power Supply
mA
1
Current (Standby)
≥ VCC –0.2 V
RAS cycling,
Average Power
Supply Current
ICC3 CAS = VIH,
—
—
—
—
100
5
—
—
—
—
90
5
—
—
—
—
80
5
mA 1, 2
(RAS-only Refresh)
tRC = Min.
RAS = VIH,
ICC5 CAS = VIL,
DQ = enable
Power Supply
mA
1
Current (Standby)
Average Power
RAS cycling,
ICC6
100
100
90
90
80
80
mA 1, 2
mA 1, 3
Supply Current
CAS before RAS
(CAS before RAS Refresh)
Average Power
RAS = VIL,
ICC7 CAS cycling,
tPC = Min.
Supply Current
(Fast Page Mode)
Notes : 1. I Max. is specified as I for output open condition.
CC
CC
2. The address can be changed once or less while RAS = V .
IL
3. The address can be changed once or less while CAS = V
.
IH
5/16
¡ Semiconductor
MSM5116800C
AC Characteristics (1/2)
(VCC = 5 V 10ꢀ, Ta = 0°C to 70°C) Note 1, 2, 3, 11, 12
MSM5116800 MSM5116800 MSM5116800
C-50
C-60
C-70
Parameter
Symbol
Unit Note
Min. Max. Min. Max. Min. Max.
Random Read or Write Cycle Time
Read Modify Write Cycle Time
Fast Page Mode Cycle Time
tRC
tRWC
tPC
90
131
35
—
—
—
110
155
40
—
—
—
130
185
45
—
—
—
ns
ns
ns
Fast Page Mode Read Modify Write
Cycle Time
76
—
85
—
100
—
ns
tPRWC
Access Time from RAS
Access Time from CAS
Access Time from Column Address
Access Time from CAS Precharge
tRAC
tCAC
tAA
—
—
—
50
13
25
—
—
—
60
15
30
—
—
—
70
20
35
ns 4, 5, 6
ns
ns
4, 5
4, 6
tCPA
—
—
0
30
13
—
13
13
50
64
—
—
—
0
35
15
—
15
15
50
64
—
—
—
0
40
20
—
20
20
50
64
—
ns
ns
ns
ns
ns
ns
ms
ns
4
4
4
7
7
3
Access Time from OE
Output Low Impedance Time from CAS
tOEA
tCLZ
CAS to Data Output Buffer Turn-off Delay Time tOFF
OE to Data Output Buffer Turn-off Delay Time
Transition Time
0
0
0
tOEZ
tT
tREF
tRP
0
3
—
30
0
3
—
40
0
3
—
50
Refresh Period
RAS Precharge Time
RAS Pulse Width
tRAS
50 10,000 60 10,000 70 10,000 ns
50 100,000 60 100,000 70 100,000 ns
RAS Pulse Width (Fast Page Mode)
RAS Hold Time
RAS Hold Time referenced to OE
CAS Precharge Time (Fast Page Mode)
CAS Pulse Width
tRASP
tRSH
tROH
tCP
13
13
7
—
—
—
15
15
10
—
—
—
20
20
10
—
—
—
ns
ns
ns
tCAS
tCSH
tCRP
tRHCP
tRCD
tRAD
tASR
tRAH
tASC
tCAH
tRAL
tRCS
tRCH
13 10,000 15 10,000 20 10,000 ns
CAS Hold Time
50
5
—
—
—
37
25
—
—
—
—
—
—
—
—
60
5
—
—
—
45
30
—
—
—
—
—
—
—
—
70
5
—
—
—
50
35
—
—
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CAS to RAS Precharge Time
RAS Hold Time from CAS Precharge
RAS to CAS Delay Time
RAS to Column Address Delay Time
Row Address Set-up Time
Row Address Hold Time
30
17
12
0
35
20
15
0
40
20
15
0
5
6
7
10
0
10
0
Column Address Set-up Time
Column Address Hold Time
Column Address to RAS Lead Time
Read Command Set-up Time
Read Command Hold Time
0
7
25
0
15
30
0
15
35
0
0
0
0
8
8
Read Command Hold Time referenced to RAS tRRH
0
0
0
6/16
¡ Semiconductor
MSM5116800C
AC Characteristics (2/2)
(VCC = 5 V 10ꢀ, Ta = 0°C to 70°C) Note 1, 2, 3, 11, 12
MSM5116800 MSM5116800 MSM5116800
C-50
C-60
C-70
Parameter
Symbol
Unit Note
Min. Max. Min. Max. Min. Max.
Write Command Set-up Time
Write Command Hold Time
tWCS
tWCH
0
7
—
—
0
—
—
0
—
—
ns
ns
9
10
15
Write Command Pulse Width
OE Command Hold Time
Write Command to RAS Lead Time
Write Command to CAS Lead Time
tWP
tOEH
tRWL
tCWL
7
—
—
—
—
10
15
15
15
—
—
—
—
10
20
20
20
—
—
—
—
ns
ns
ns
ns
13
13
13
Data-in Set-up Time
tDS
tDH
0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0
15
20
50
65
100
70
10
10
10
10
10
10
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
10
Data-in Hold Time
OE to Data-in Delay Time
CAS to WE Delay Time
Column Address to WE Delay Time
RAS to WE Delay Time
7
15
15
40
55
85
60
10
10
10
10
10
10
10
tOED
tCWD
tAWD
tRWD
tCPWD
tRPC
13
36
48
73
53
10
10
10
10
10
10
10
9
9
9
9
CAS Precharge WE Delay Time
CAS Active Delay Time from RAS Precharge
RAS to CAS Set-up Time (CAS before RAS) tCSR
RAS to CAS Hold Time (CAS before RAS) tCHR
WE to RAS Precharge Time (CAS before RAS) tWRP
WE Hold Time from RAS (CAS before RAS) tWRH
RAS to WE Set-up Time (Test Mode)
RAS to WE Hold Time (Test Mode)
tWTS
tWTH
7/16
¡ Semiconductor
MSM5116800C
Notes: 1. Astart-up delay of 200 µs is required after power-up, followed by a minimum of eight
initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device
operation is achieved.
2. The AC characteristics assume t = 5 ns.
T
3. V (Min.) and V (Max.) are reference levels for measuring input timing signals.
IH
IL
Transition times (t ) are measured between V and V .
T
IH
IL
4. This parameter is measured with a load circuit equivalent to 2 TTL loads and 100 pF.
5. Operation within the t (Max.) limit ensures that t (Max.) can be met.
RCD
RAC
t
t
(Max.) is specified as a reference point only. If t
(Max.) limit, then the access time is controlled by t
is greater than the specified
RCD
RCD
RCD
.
CAC
6. Operation within the t
(Max.) limit ensures that t
(Max.) can be met.
is greater than the specified
RAD
RAC
t
(Max.) is specified as a reference point only. If t
(Max.) limit, then the access time is controlled by t
RAD
RAD
RAD
t
.
AA
7. t
(Max.) and t
(Max.) define the time at which the output achieves the open
OEZ
OFF
circuit condition and are not referenced to output voltage levels.
8. t
9. t
or t
must be satisfied for a read cycle.
RRH
RCH
, t
, t
, t
and t
are not restrictive operating parameters. They are
WCS CWD RWD AWD
CPWD
included in the data sheet as electrical characteristics only. If t
≥t
(Min.), then
WCS WCS
the cycle is an early write cycle and the data out will remain open circuit (high
impedance) throughout the entire cycle. If t ≥ t (Min.) , t ≥ t (Min.),
CWD
CWD
RWD
RWD
t
≥ t
(Min.) and t
≥ t
(Min.), then the cycle is a read modify write
AWD AWD
CPWD
CPWD
cycle and data out will contain data read from the selected cell; if neither of the above
sets of conditions is satisfied, then the condition of the data out (at access time) is
indeterminate.
10. These parameters are referenced to the CAS leading edge in an early write cycle, and
to the WE leading edge in an OE control write cycle, or a read modify write cycle.
11. The test mode is initiated by performing a WE and CAS before RAS refresh cycle.
This mode is latched and remains in effect until the exit cycle is generated.
The test mode specified in this data sheet is a 2-bit parallel test function. CA8 is not
used. In a read cycle, if all internal bits are equal, the DQ pin will indicate a high
level. If any internal bits are not equal, the DQ pin will indicate a low level.
The test mode is cleared and the memory device returned to its normal operating
state by performing a RAS-only refresh cycle or a CAS before RAS refresh cycle.
12. In a test mode read cycle, the value of access time parameters is delayed for 5 ns for the
specifiedvalue.Theseparametersshouldbespecifiedintestmodecyclebyaddingthe
above value to the specified value in this data sheet.
8/16
E2G0093-17-41F
¡ Semiconductor
MSM5116800C
TIMING WAVEFORM
Read Cycle
tRC
tRP
tRAS
VIH
VIL
–
–
tCRP
RAS
tCSH
tCRP
tRCD
tRSH
tCAS
VIH
VIL
–
–
CAS
tRAD
tASC
tASR
Row
tRAH
tRAL
tCAH
Column
VIH
VIL
–
–
Address
tRCH
tRCS
tRRH
VIH
VIL
–
–
tAA
WE
OE
tROH
tOEA
VIH
VIL
–
–
tOFF
tCAC
tRAC
tOEZ
VOH
VOL
–
–
DQ
Open
Valid Data-out
tCLZ
"H" or "L"
Write Cycle (Early Write)
tRC
tRP
tRAS
VIH
VIL
–
–
tCRP
RAS
CAS
tCSH
tCRP
tRCD
tRAD
tRAH
tASC
tRSH
tCAS
VIH
VIL
–
–
tRAL
tASR
Row
tCAH
Column
tWCH
VIH
VIL
–
–
Address
tWCS
tCWL
VIH
VIL
–
–
tWP
WE
tRWL
VIH
VIL
–
–
OE
tDS
tDH
VIH
VIL
–
–
DQ
Open
Valid Data-in
"H" or "L"
9/16
¡ Semiconductor
MSM5116800C
Read Modify Write Cycle
tRWC
tRAS
tRP
VIH
VIL
–
–
RAS
CAS
tCRP
tCSH
tCRP
tRCD
tRSH
tCAS
VIH
VIL
–
–
tRAH
tASC
tASR
tCAH
Column
VIH
VIL
–
–
Row
Address
tCWL
tRWL
tWP
tCWD
tAWD
tRAD
tRWD
tOEA
VIH
VIL
–
–
tAA
WE
OE
tRCS
VIH
VIL
–
–
tOED
tOEZ
tOEH
tDH
tCAC
tDS
tRAC
VI/OH
–
Valid
Data-out
Valid
Data-in
DQ
–
tCLZ
VI/OL
"H" or "L"
10/16
¡ Semiconductor
MSM5116800C
Fast Page Mode Read Cycle
tRASP
tRP
tRHCP
VIH
VIL
–
–
RAS
CAS
tCRP
tPC
tRSH
tCRP
tRCD
tRAD
tRAH tASC
tCP
tCP
tCAS
tCAS
tCAS
tRAL
VIH
VIL
–
–
tCSH
tCAH
tASR
Row
tASC
tCAH
tASC tCAH
VIH
VIL
–
–
Column
Column
Column
tRCS
Address
tRCH
tRCS
tRCS
tRCH
tRCH
VIH
VIL
–
–
WE
tAA
tAA
tAA
tRRH
tCPA
tCPA
tOEA
tOEA
tOEA
VIH
VIL
–
–
OE
tOFF
tOEZ
tOFF
tOEZ
Valid
tCAC
tCLZ
tCAC
tCLZ
tOFF
tCAC
tRAC
tOEZ
VOH
VOL
–
–
Valid
Data-out
Valid
Data-out
DQ
Data-out
tCLZ
"H" or "L"
Fast Page Mode Write Cycle (Early Write)
tRASP
tPC
tRP
tRHCP
VIH
VIL
–
–
RAS
CAS
tCRP
tRSH
tCAS
tRAL
tCRP
tRCD
tCP
tCP
tCAS
tCAS
tCAH
Column
VIH
VIL
–
–
tCSH
tCAH
tASR
Row
tASC
tASC
tASC
tRAH
tCAH
VIH
VIL
–
–
Column
tCWL
tWCH
tWP
Column
Address
tRAD
tWCS
tCWL
tWCH
tWP
tRWL
tCWL
tWCH
tWP
tWCS
tWCS
VIH
VIL
–
–
WE
tDS
tDS
tDS
tDH
tDH
tDH
VIH
VIL
–
–
Valid
Data-in
Valid
Data-in
Valid Data-in
DQ
Note: OE = "H" or "L"
"H" or "L"
11/16
¡ Semiconductor
MSM5116800C
Fast Page Mode Read Modify Write Cycle
tRASP
VIH
VIL
–
–
RAS
CAS
tRP
tCSH
tPRWC
tCAS
tRSH
tCAS
tCRP
tCP
tCP
tRCD
tRAD
tRAH
tCAS
VIH
VIL
–
–
tASC
tCAH
tASC
tRAL
tCAH
tCAH
tASR
tASC
VIH
VIL
–
–
Column
tRWD
Column
tRCS
Column
Address
Row
tRCS
tCPWD
tCPWD
tCWD
tRWL
tCWL
tCWD
tCWD
tRCS
tCWL
tCWL
VIH
VIL
–
–
WE
tAWD
tAWD
tAWD
tROH
tWP
tWP
tDH
tWP
tDH
tDH
tDS
tDS
tDS
tRAC
tCPA
tAA
tCPA
tAA
tAA
tOEA
tOEA
tOEA
tOED
tOED
tOED
VIH
VIL
–
–
OE
tOEZ
tOEZ
tOEZ
tCAC
tCAC
tCAC
VI/OH
–
DQ
Out
In
Out
In
Out
In
–
VI/OL
tCLZ
tCLZ
tCLZ
"H" or "L"
RAS-Only Refresh Cycle
tRC
tRP
tRAS
VIH
VIL
–
–
RAS
CAS
tCRP
tRPC
VIH
VIL
–
–
tASR tRAH
VIH
VIL
–
–
Address
DQ
Row
tOFF
VOH
VOL
–
–
Open
Note: WE, OE = "H" or "L"
"H" or "L"
12/16
¡ Semiconductor
MSM5116800C
CAS before RAS Refresh Cycle
tRC
tRP
tRP
tRAS
VIH
VIL
–
–
RAS
CAS
tRPC
tRPC
tCP
tCSR
tCHR
VIH
VIL
–
–
tWRP
tWRP
tWRH
VIH –
VIL –
WE
tOFF
VOH
–
DQ
Open
VOL
–
Note: OE, Address = "H" or "L"
"H" or "L"
Hidden Refresh Read Cycle
tRC
tRC
tRAS
tRAS
tRP
tRP
VIH
VIL
–
–
RAS
tCRP
tRSH
tRCD
tCHR
VIH
VIL
–
–
tRAD
tASC
tRAH
CAS
tCAH
tASR
VIH
VIL
–
–
Address
Row
Column
tRCS
tRRH
tRAL
VIH
VIL
–
–
tAA
WE
OE
tROH
tOEA
VIH
VIL
–
–
tCAC
tCLZ
tOFF
tRAC
tOEZ
VOH
VOL
–
–
DQ
Valid Data-out
"H" or "L"
13/16
¡ Semiconductor
MSM5116800C
Hidden Refresh Write Cycle
tRC
tRC
tRAS
tRAS
tRP
tRP
VIH
VIL
–
–
RAS
tCRP
tRCD
tRSH
tCHR
VIH
VIL
–
–
tRAD
tASC
CAS
tCAH
Column
tASR
Row
tRAH
tRAL
VIH
VIL
–
–
Address
tWRP
tWRH
tWCS
tWCH
tWP
VIH
VIL
–
–
WE
OE
VIH
VIL
–
–
tDS
tDH
VIH
VIL
–
–
Valid Data-in
DQ
"H" or "L"
Test Mode Initiate Cycle
tRC
tRP
tRAS
VIH
VIL
–
–
RAS
tRPC
tCP
tCSR
tCHR
VIH
VIL
–
–
CAS
WE
tWTS
tWTH
VIH
VIL
–
–
tOFF
VOH
VOL
–
–
DQ
Open
Note: OE, Address = "H" or "L"
"H" or "L"
14/16
¡ Semiconductor
MSM5116800C
PACKAGE DIMENSIONS
(Unit : mm)
SOJ28-P-400-1.27
Mirror finish
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
1.30 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
15/16
¡ Semiconductor
MSM5116800C
(Unit : mm)
TSOPII28-P-400-1.27-K
Mirror finish
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
0.51 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
16/16
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