MSM5116805C-60TS-K [OKI]
2,097,152-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO; 2,097,152字×8位动态RAM ：快速页模式输入与EDO
| 型号： | MSM5116805C-60TS-K |
| 厂家： | 
OKI ELECTRONIC COMPONETS |
| 描述： | 2,097,152-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
| 文件： | 总17页 (文件大小：678K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
E2G0111-18-42
Preliminary
This version: Apr. 1998
¡ Semiconductor
MSM5116805C
2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
TheMSM5116805Cisa2,097,152-word ¥8-bitdynamicRAMfabricatedinOki'ssilicon-gateCMOS
technology. The MSM5116805C achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MSM5116805C is available in a 28-pin plastic SOJ or 28-pin plastic TSOP.
FEATURES
• 2,097,152-word ¥ 8-bit configuration
• Single 5 V power supply, ±10% tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 4096 cycles/64 ms
• Fast page mode with EDO, read modify write capability
• CAS before RAS refresh, hidden refresh, RAS-only refresh capability
• Multi-bit test mode capability
• Package options:
28-pin 400 mil plastic SOJ
28-pin 400 mil plastic TSOP
(SOJ28-P-400-1.27)
(Product : MSM5116805C-xxJS)
(TSOPII28-P-400-1.27-K) (Product : MSM5116805C-xxTS-K)
(TSOPII28-P-400-1.27-L) (Product : MSM5116805C-xxTS-L)
xx indicates speed rank.
PRODUCT FAMILY
Access Time (Max.)
Cycle Time
(Min.)
Power Dissipation
Family
tRAC tAA tCAC tOEA
50 ns 25 ns 13 ns 13 ns
60 ns 30 ns 15 ns 15 ns
70 ns 35 ns 20 ns 20 ns
Standby (Max.)
Operating (Max.)
MSM5116805C-50
MSM5116805C-60
MSM5116805C-70
90 ns
110 ns
130 ns
550 mW
495 mW
440 mW
5.5 mW
1/17
¡ Semiconductor
MSM5116805C
PIN CONFIGURATION (TOP VIEW)
VCC
1
28 VSS
27 DQ8
26 DQ7
25 DQ6
24 DQ5
23 CAS
22 OE
VCC
1
28 VSS
27 DQ8
26 DQ7
25 DQ6
24 DQ5
23 CAS
22 OE
21 A9R
20 A8
VSS 28
DQ8 27
DQ7 26
DQ6 25
DQ5 24
CAS 23
OE 22
1
2
3
4
5
6
7
8
9
VCC
DQ1 2
DQ2 3
DQ3 4
DQ4 5
WE 6
DQ1 2
DQ2 3
DQ3 4
DQ4 5
WE 6
DQ1
DQ2
DQ3
DQ4
WE
RAS 7
A11R 8
A10R 9
A0 10
RAS 7
RAS
A11R
A10R
21 A9R A11R 8
A9R 21
A8 20
20 A8
19 A7
18 A6
17 A5
16 A4
15 VSS
A10R 9
A0 10
A1 11
A2 12
A3 13
VCC 14
19 A7
A7 19
10 A0
11 A1
12 A2
13 A3
14 VCC
A1 11
18 A6
A6 18
A2 12
17 A5
A5 17
A3 13
16 A4
A4 16
VCC 14
15 VSS
VSS 15
28-Pin Plastic SOJ
28-Pin Plastic TSOP
(K Type)
28-Pin Plastic TSOP
(L Type)
Pin Name
A0 - A8,
A9R - A11R
RAS
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Input/Data Output
Output Enable
CAS
DQ1 - DQ8
OE
WE
Write Enable
VCC
Power Supply (5 V)
Ground (0 V)
VSS
Note :
The same power supply voltage must be provided to every V pin, and the same GND
CC
voltage level must be provided to every V pin.
SS
2/17
¡ Semiconductor
MSM5116805C
BLOCK DIAGRAM
WE
OE
Timing
Generator
RAS
I/O
Controller
Output
Buffers
8
8
8
CAS
DQ1 - DQ8
8
Column
Address
Buffers
Input
Buffers
Column Decoders
9
9
I/O
Selector
Internal
Address
Counter
Sense Amplifiers
8
8
Refresh
Control Clock
A0 - A8
9
3
Row
Address
Buffers
Row
Memory
Cells
12
Deco-
Word
Drivers
ders
A9R - A11R
VCC
On Chip
V
Generator
BB
On Chip
IV Generator
CC
VSS
3/17
¡ Semiconductor
MSM5116805C
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to VSS
Voltage on VCC Supply Relative to VSS
Short Circuit Output Current
Power Dissipation
Symbol
VIN, VOUT
VCC
Rating
–0.5 to VCC + 0.5
–0.5 to 7
50
Unit
V
V
IOS
mA
W
PD
*
1
Operating Temperature
Topr
Tstg
0 to 70
°C
°C
Storage Temperature
–55 to 150
*: Ta = 25°C
Recommended Operating Conditions
(Ta = 0°C to 70°C)
Parameter
Power Supply Voltage
Symbol
VCC
Min.
4.5
Typ.
5.0
0
Max.
5.5
0
Unit
V
VSS
0
V
Input High Voltage
Input Low Voltage
VIH
2.4
–0.5*2
—
VCC + 0.5*1
V
V
VIL
—
0.8
Notes : *1. TheinputvoltageisV +2.0Vwhenthepulsewidthislessthan20ns(thepulsewidth
CC
is with respect to the point at which V is applied).
CC
*2. TheinputvoltageisV –2.0Vwhenthepulsewidthislessthan20ns(thepulsewidth
SS
is with respect to the point at which V is applied).
SS
Capacitance
(VCC = 5 V 10ꢀ, Ta = 25°C, f = 1 MHꢁ)
Parameter
Symbol
Typ.
Max.
Unit
Input Capacitance
(A0 - A8, A9R - A11R)
CIN1
—
5
pF
Input Capacitance (RAS, CAS, WE, OE)
CIN2
CI/O
—
—
7
7
pF
pF
Output Capacitance (DQ1 - DQ8)
4/17
¡ Semiconductor
MSM5116805C
DC Characteristics
(VCC = 5 V 10ꢀ, Ta = 0°C to 70°C)
MSM5116805 MSM5116805 MSM5116805
C-50 C-60 C-70
Parameter
Symbol
Condition
Unit Note
Min. Max. Min. Max. Min. Max.
Output High Voltage
Output Low Voltage
VOH IOH = –5.0 mA
2.4
0
VCC
0.4
2.4
0
VCC
0.4
2.4
0
VCC
0.4
V
V
VOL
IOL = 4.2 mA
0 V £ VI £ 6.5 V;
Input Leakage Current
ILI All other pins not
under test = 0 V
–10
–10
—
10
10
–10
–10
—
10
10
90
–10
–10
—
10
10
80
mA
DQ disable
ILO
Output Leakage Current
mA
0 V £ VO £ VCC
Average Power
Supply Current
(Operating)
RAS, CAS cycling,
ICC1
100
mA 1, 2
t
RC = Min.
—
—
2
1
—
—
2
1
—
—
2
1
RAS, CAS = VIH
ICC2 RAS, CAS
Power Supply
mA
1
Current (Standby)
≥ VCC –0.2 V
RAS cycling,
Average Power
Supply Current
ICC3 CAS = VIH,
—
—
—
—
100
5
—
—
—
—
90
5
—
—
—
—
80
5
mA 1, 2
(RAS-only Refresh)
tRC = Min.
RAS = VIH,
ICC5 CAS = VIL,
DQ = enable
Power Supply
mA
1
Current (Standby)
Average Power
RAS cycling,
ICC6
100
100
90
90
80
80
mA 1, 2
mA 1, 3
Supply Current
CAS before RAS
(CAS before RAS Refresh)
Average Power
RAS = VIL,
ICC7 CAS cycling,
tHPC = Min.
Supply Current
(Fast Page Mode)
Notes : 1. I Max. is specified as I for output open condition.
CC
CC
2. The address can be changed once or less while RAS = V .
IL
3. The address can be changed once or less while CAS = V
.
IH
5/17
¡ Semiconductor
MSM5116805C
AC Characteristics (1/2)
(VCC = 5 V 10ꢀ, Ta = 0°C to 70°C) Note 1, 2, 3, 12, 13
MSM5116805 MSM5116805 MSM5116805
C-50
C-60
C-70
Parameter
Symbol
Unit Note
Min. Max. Min. Max. Min. Max.
Random Read or Write Cycle Time
Read Modify Write Cycle Time
Fast Page Mode Cycle Time
tRC
tRWC
tHPC
84
110
20
—
—
—
104
135
25
—
—
—
124
160
30
—
—
—
ns
ns
ns
Fast Page Mode Read Modify Write
Cycle Time
58
—
68
—
78
—
ns
tHPRWC
Access Time from RAS
Access Time from CAS
Access Time from Column Address
Access Time from CAS Precharge
tRAC
tCAC
tAA
—
—
—
50
13
25
—
—
—
60
15
30
—
—
—
70
20
35
ns 4, 5, 6
ns
ns
4, 5
4, 6
tCPA
—
—
0
30
13
—
—
13
13
13
13
50
64
—
—
—
0
35
15
—
—
15
15
15
15
50
64
—
—
—
0
40
20
—
—
20
20
20
20
50
64
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
4
4
4
Access Time from OE
Output Low Impedance Time from CAS
Data Output Hold After CAS Low
tOEA
tCLZ
tDOH
5
5
5
CAS to Data Output Buffer Turn-off Delay Time tCEZ
RAS to Data Output Buffer Turn-off Delay Time tREZ
0
0
0
7, 8
7, 8
7
0
0
0
OE to Data Output Buffer Turn-off Delay Time
WE to Data Output Buffer Turn-off Delay Time tWEZ
tOEZ
0
0
0
0
0
0
7
Transition Time
Refresh Period
tT
tREF
tRP
1
—
30
1
—
40
1
—
50
3
RAS Precharge Time
RAS Pulse Width
tRAS
50 10,000 60 10,000 70 10,000 ns
50 100,000 60 100,000 70 100,000 ns
RAS Pulse Width (Fast Page Mode with EDO) tRASP
RAS Hold Time
RAS Hold Time referenced to OE
tRSH
tROH
7
7
—
—
—
10
10
10
—
—
—
13
13
10
—
—
—
ns
ns
ns
CAS Precharge Time (Fast Page Mode with EDO) tCP
7
CAS Pulse Width
tCAS
tCSH
tCRP
tRHCP
tCHO
tRCD
tRAD
tASR
tRAH
tASC
tCAH
tRAL
7
10,000 10 10,000 13 10,000 ns
CAS Hold Time
35
5
—
—
—
—
37
25
—
—
—
—
—
40
5
—
—
—
—
45
30
—
—
—
—
—
45
5
—
—
—
—
50
35
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CAS to RAS Precharge Time
RAS Hold Time from CAS Precharge
OE Hold Time from CAS (DQ Disable)
RAS to CAS Delay Time
RAS to Column Address Delay Time
Row Address Set-up Time
Row Address Hold Time
30
5
35
5
40
5
11
9
14
12
0
14
12
0
5
6
0
7
10
0
10
0
Column Address Set-up Time
Column Address Hold Time
Column Address to RAS Lead Time
0
7
25
10
30
13
35
6/17
¡ Semiconductor
MSM5116805C
AC Characteristics (2/2)
(VCC = 5 V 10ꢀ, Ta = 0°C to 70°C) Note 1, 2, 3, 12, 13
MSM5116805 MSM5116805 MSM5116805
C-50
C-60
C-70
Parameter
Symbol
Unit Note
Min. Max. Min. Max. Min. Max.
Read Command Set-up Time
Read Command Hold Time
tRCS
tRCH
0
0
—
—
0
0
—
—
0
0
—
—
ns
ns
9
Read Command Hold Time referenced to RAS tRRH
0
0
—
—
0
0
—
—
0
0
—
—
ns
ns
9
10
Write Command Set-up Time
tWCS
Write Command Hold Time
tWCH
7
—
10
—
13
—
ns
Write Command Pulse Width
WE Pulse Width (DQ Disable)
OE Command Hold Time
tWP
tWPE
tOEH
tOEP
tOCH
tRWL
tCWL
7
7
7
7
7
7
7
—
—
—
—
—
—
—
10
10
10
10
10
10
10
—
—
—
—
—
—
—
10
10
13
10
10
13
13
—
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
OE Precharge Time
OE Command Hold Time
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Data-in Set-up Time
tDS
tDH
0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
11
11
Data-in Hold Time
OE to Data-in Delay Time
CAS to WE Delay Time
Column Address to WE Delay Time
RAS to WE Delay Time
7
10
15
34
49
79
54
5
13
20
44
59
94
64
5
tOED
tCWD
tAWD
tRWD
tCPWD
tRPC
13
30
42
67
47
5
10
10
10
10
CAS Precharge WE Delay Time
CAS Active Delay Time from RAS Precharge
RAS to CAS Set-up Time (CAS before RAS) tCSR
RAS to CAS Hold Time (CAS before RAS) tCHR
WE to RAS Precharge Time (CAS before RAS) tWRP
WE Hold Time from RAS (CAS before RAS) tWRH
RAS to WE Set-up Time (Test Mode)
RAS to WE Hold Time (Test Mode)
5
5
5
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
tWTS
tWTH
7/17
¡ Semiconductor
MSM5116805C
Notes: 1. Astart-up delay of 200 µs is required after power-up, followed by a minimum of eight
initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device
operation is achieved.
2. The AC characteristics assume t = 2 ns.
T
3. V (Min.) and V (Max.) are reference levels for measuring input timing signals.
IH
IL
Transition times (t ) are measured between V and V .
T
IH
IL
4. This parameter is measured with a load circuit equivalent to 2 TTL loads and 100 pF.
5. Operation within the t (Max.) limit ensures that t (Max.) can be met.
RCD
RAC
t
(Max.) is specified as a reference point only. If t
(Max.) limit, then the access time is controlled by t
is greater than the specified
.
CAC
RCD
RCD
t
RCD
6. Operation within the t
(Max.) limit ensures that t
(Max.) can be met.
is greater than the specified
RAD
RAC
t
(Max.) is specified as a reference point only. If t
RAD
RAD
t
(Max.) limit, then the access time is controlled by t
.
RAD
AA
7. t
(Max.), t
(Max.), t
(Max.) and t
(Max.) define the time at which the
OEZ
CEZ
REZ
WEZ
outputachievestheopencircuitconditionandarenotreferencedtooutputvoltage
levels.
8. t
9. t
and t
must be satisfied for open circuit condition.
REZ
CEZ
or t
must be satisfied for a read cycle.
RRH
RCH
10. t
, t
, t
, t
and t
are not restrictive operating parameters. They are
WCS CWD RWD AWD
CPWD
included in the data sheet as electrical characteristics only. If t
≥t
(Min.), then
WCS WCS
the cycle is an early write cycle and the data out will remain open circuit (high
impedance) throughout the entire cycle. If t ≥ t (Min.) , t ≥ t (Min.),
CWD
CWD
RWD
RWD
t
≥ t
(Min.) and t
≥ t
(Min.), then the cycle is a read modify write
AWD AWD
CPWD
CPWD
cycle and data out will contain data read from the selected cell; if neither of the above
sets of conditions is satisfied, then the condition of the data out (at access time) is
indeterminate.
11. These parameters are referenced to the CAS leading edge in an early write cycle, and
to the WE leading edge in an OE control write cycle, or a read modify write cycle.
12. The test mode is initiated by performing a WE and CAS before RAS refresh cycle.
This mode is latched and remains in effect until the exit cycle is generated.
The test mode specified in this data sheet is a 2-bit parallel test function. CA8 is not
used. In a read cycle, if all internal bits are equal, the DQ pin will indicate a high
level. If any internal bits are not equal, the DQ pin will indicate a low level.
The test mode is cleared and the memory device returned to its normal operating
state by performing a RAS-only refresh cycle or a CAS before RAS refresh cycle.
13. In a test mode read cycle, the value of access time parameters is delayed for 5 ns for the
specifiedvalue.Theseparametersshouldbespecifiedintestmodecyclebyaddingthe
above value to the specified value in this data sheet.
8/17
E2G0100-17-41M
¡ Semiconductor
MSM5116805C
TIMING WAVEFORM
Read Cycle
tRC
tRP
tRAS
VIH
VIL
–
–
tCRP
RAS
tCSH
tCRP
tRCD
tASC
tRCS
tRSH
tCAS
VIH
VIL
–
–
CAS
tRAD
tRAH
tASR
Row
tRAL
tCAH
Column
VIH
VIL
–
–
Address
tRCH
tRRH
VIH
VIL
–
–
tAA
WE
OE
tROH
tREZ
tOEA
VIH
VIL
–
–
tCEZ
tCAC
tRAC
tOEZ
VOH
VOL
–
–
DQ
Open
Valid Data-out
tCLZ
"H" or "L"
Write Cycle (Early Write)
tRC
tRP
tRAS
VIH
VIL
–
–
tCRP
RAS
CAS
tCSH
tCRP
tRCD
tRAD
tRAH
tASC
tRSH
tCAS
VIH
VIL
–
–
tRAL
tASR
Row
tCAH
Column
VIH
VIL
–
–
Address
tWCS
tCWL
tWCH
tWP
VIH
VIL
–
–
WE
tRWL
VIH
VIL
–
–
OE
tDS
tDH
VIH
VIL
–
–
DQ
Open
Valid Data-in
"H" or "L"
9/17
¡ Semiconductor
MSM5116805C
Read Modify Write Cycle
tRWC
tRAS
tRP
VIH
VIL
–
–
RAS
CAS
tCRP
tCSH
tCRP
tRCD
tRSH
tCAS
VIH
VIL
–
–
tRAH
tASC
tASR
tCAH
Column
VIH
VIL
–
–
Row
Address
tCWL
tRWL
tWP
tCWD
tAWD
tRAD
tRWD
tOEA
VIH
VIL
–
–
tAA
WE
OE
tRCS
VIH
VIL
–
–
tOED
tOEZ
tOEH
tDH
tCAC
tDS
tRAC
VI/OH
–
Valid
Data-out
Valid
Data-in
DQ
–
tCLZ
VI/OL
"H" or "L"
10/17
¡ Semiconductor
MSM5116805C
Fast Page Mode Read Cycle (Part-1)
tRASP
tRP
VIH
VIL
–
–
tRHCP
RAS
CAS
tHPC
tCAS
tCRP
tRCD
tRAD
tCP
tCP
tCAS
tCAS
–
–
VIH
VIL
tCSH
tCAH
tASR
Row
tASC
Column
tASC
Column
tCAH
tCAH
tASC
tRAH
–
–
VIH
VIL
Column
Address
tRCS
tRRH
VIH
VIL
–
–
tCHO
tOEP
tOCH
tOEP
WE
tRAC
tAA
tAA
tAA
tCPA
VIH
VIL
–
–
OE
tOEA
tOEA
tCAC
tOEA
tOEZ
tCAC
tCAC tOEZ
tREZ
tDOH
Valid
Data-out
Valid*
Data-out
Valid*
Data-out
VOH
VOL
–
–
Valid
Data-out
DQ
tCLZ
* : Same Data,
"H" or "L"
Fast Page Mode Read Cycle (Part-2)
tRASP
tRP
tCRP
VIH
VIL
–
–
tRHCP
RAS
CAS
tHPC
tCAS
tCRP
tRCD
tRAD
tCP
tCP
tCAS
tCAS
–
–
VIH
VIL
tCSH
tASR
Row
tASC
Column
tASC
Column
tCAH
tCAH
tCAH
tASC
tRAH
–
–
VIH
VIL
Column
Address
tRCS
tRCS
VIH
VIL
–
–
tRCH
WE
tRAC
tAA
tAA
tAA
tWPE
VIH
VIL
–
–
tCPA
OE
tOEA
tCAC tWEZ
tCAC
tDOH
tCAC
tCEZ
VOH
VOL
–
–
Valid
Data-out
Valid
Data-out
Valid
Data-out
DQ
tCLZ
"H" or "L"
11/17
¡ Semiconductor
MSM5116805C
Fast Page Mode Write Cycle (Early Write)
tRP
tRASP
VIH
VIL
–
–
RAS
CAS
tHPC
tCAS
tHPC
tCRP
tRCD
tRAD
tCP
tCP
tCAS
tCAS
tRSH
–
–
VIH
VIL
tCSH
tASC tCAH
Column
tASC tCAH
Column
tASC tCAH
tASR
tRAH
Row
–
–
VIH
VIL
Column
Address
tWCS
tWCH
tWCS tWCH
tWCS tWCH
VIH
VIL
–
–
WE
VIH
VIL
–
–
OE
tDS
tDH
Valid
tDS tDH
tDS tDH
VIH
VIL
–
–
Valid
Data-in
Valid
Data-in
DQ
Data-in
"H" or "L"
Fast Page Mode Read Modify Write Cycle
tRASP
tRWD
VIH
VIL
–
–
RAS
CAS
tCP
tCRP
tRCD
tRAD
tRAH
–
–
tCWD
tHPRWC
VIH
VIL
tCPWD
tCPA
tRWL
tCWL
tASC
tASR
tASC tCAH
tCAH
–
–
VIH
VIL
Row
Column
Column
Address
tRCS
tAWD
tCWD
tRCS
VIH
VIL
–
–
WE
OE
tAWD
tRAC
tDS tWP
tAA
tDS
tWP
tAA
VIH
VIL
–
–
tOEH
tDH
tOEH
tDH
tOED
tOED
tOEA
tOEA
tCAC
tOEZ
tOEZ
tCAC
VI/OH
VI/OL
–
–
Valid
Data-out
Valid
Data-in
Valid
Data-out
Valid
Data-in
DQ
tCLZ
tCLZ
"H" or "L"
12/17
¡ Semiconductor
MSM5116805C
RAS-Only Refresh Cycle
tRC
tRP
tRAS
VIH
VIL
–
–
RAS
CAS
tRPC
tCRP
–
–
VIH
VIL
tRAH
tASR
Row
VIH
VIL
–
–
Address
DQ
tCEZ
VOH
VOL
–
–
Open
"H" or "L"
Note: WE, OE = "H" or "L"
CAS before RAS Refresh Cycle
tRC
tRP
tRP
tRAS
VIH
VIL
–
–
RAS
CAS
tRPC
tRPC
tCP
tCSR
tCHR
VIH
VIL
–
–
tWRP
tWRP
tWRH
VIH
VIL
–
–
WE
tCEZ
VOH
VOL
DQ
–
–
Open
Note: OE, Address = "H" or "L"
"H" or "L"
13/17
¡ Semiconductor
MSM5116805C
Hidden Refresh Read Cycle
tRC
tRC
tRAS
tRAS
tRP
tRP
VIH –
RAS
VIL
–
tCRP
tRSH
tRCD
tCHR
VIH –
tRAD
tASC
CAS
VIL
–
tCAH
Column
tASR
Row
tRAH
VIH
VIL
–
–
Address
tRCS
tRRH
tRAL
tAA
VIH –
VIL
WE
OE
–
tROH
tOEA
VIH –
VIL
–
tCEZ
tCAC
tCLZ
tREZ
tOEZ
tRAC
VOH
VOL
–
–
DQ
Open
Valid Data-out
"H" or "L"
Hidden Refresh Write Cycle
tRC
tRAS
tRC
tRAS
tRP
tRP
VIH
VIL
–
–
RAS
CAS
tCRP
tRCD
tRSH
tCHR
–
–
VIH
VIL
tRAD
tASC
tASR
tCAH
tRAH
tRAL
–
–
VIH
VIL
Row
Column
tRWL
tWCH
tWP
Address
tWCS
VIH
VIL
–
–
WE
OE
VIH
VIL
–
–
tDS
tDH
Valid Data-in
VIH
VIL
–
–
DQ
"H" or "L"
14/17
¡ Semiconductor
MSM5116805C
Test Mode Initiate Cycle
tRC
tRP
tRAS
VIH
VIL
–
–
RAS
tRPC
tCP
tCSR
tCHR
VIH
VIL
–
–
CAS
WE
tWTS
tWTH
VIH
VIL
–
–
tOFF
VOH
VOL
–
–
DQ
Open
Note: OE, Address = "H" or "L"
"H" or "L"
15/17
¡ Semiconductor
MSM5116805C
PACKAGE DIMENSIONS
(Unit : mm)
SOJ28-P-400-1.27
Mirror finish
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
1.30 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
16/17
¡ Semiconductor
MSM5116805C
(Unit : mm)
TSOPII28-P-400-1.27-K
Mirror finish
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
0.51 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
17/17
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