1N4149 [ONSEMI]
高电导快速二极管;
| 型号： | 1N4149 |
| 厂家： | 
ONSEMI |
| 描述： | 高电导快速二极管 二极管 |
| 文件： | 总5页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Small Signal Diode
1N4149
ABSOLUTE MAXIMUM RATINGS
A
AXIAL LEAD
(DO−35)
CASE 017AG
(T = 25C unless otherwise noted) (Notes 1, 2, 3)
Symbol
Rating
Value
100
Unit
V
V
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
RRM
(Color Band Denotes Cathode)
I
500
mA
A
F(AV)
MARKING DIAGRAM
I
Non−repetitive Peak Forward Surge
Current
FSM
Pulse Width = 1.0 s
Pulse Width = 1.0 ms
1.0
4.0
T
Storage Temperature Range
−65 to +200
C
C
STG
T
J
Operating Junction Temperature
175
41
49
UNK
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are limiting values above which the serviceability of the diode
may be impaired.
CATHODE
BAND
2. These ratings are based on a maximum junction temperature of 200C.
3. These are steady limits. The factory should be consulted on applications
involving pulsed or low duty cycle operations.
THERMAL CHARACTERISTICS
4149 = Specific Device Code
Symbol
Parameter
Power Dissipation
Max
500
300
Unit
mW
C
P
D
ORDERING INFORMATION
R
Thermal Resistance,
Junction−to−Ambient
q
JA
†
Device
Package
Shipping
1N4149
DO−35
(Pb−Free)
5,000 Units /
Bulk
ELECTRICAL CHARACTERISTICS
(T = 25C unless otherwise noted)
1N4149TR
DO−35
(Pb−Free)
10,000 Units /
Tape & Reel
A
Symbol Parameter
Conditions
= 5 mA
= 100 mA
Min
Max
Unit
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
R
Breakdown
Voltage
I
R
I
R
75
100
−
−
V
V
F
Forward
Voltage
I = 10 mA
F
−
1.0
V
I
R
Reverse
Leakage
V
R
V
R
= 20 V
−
−
25
50
nA
mA
= 20 V, T = 150C
A
C
Total
V
= 0, f = 1.0 MHz
−
2
pF
ns
T
R
Capacitance
t
rr
Reverse
Recovery
Time
I = 10 mA, V = 6.0 V
−
4
F
rr
R
I
= 1 mA, R = 100 W
L
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different
conditions.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
November, 2022 − Rev. 1
1N4149/D
1N4149
TYPICAL PERFORMANCE CHARACTERISTICS
160
150
140
130
120
T = 25C
A
T = 25C
A
GENERAL RULE: The Reverse Current of a diode
will approximately double for every ten (10) Degree C
increase in Temperature.
100
80
60
40
120
110
20
0
1
2
3
5
10
20 30
50
100
10
20
30
50
70
100
I , Reverse Current (mA)
R
V , Reverse Voltage (V)
R
Figure 1. Reverse Voltage vs. Reverse Current
V − 1.0 to 100 mA
Figure 2. Reverse Current vs. Reverse Voltage
R − 10 to 100 V
B
I
550
500
750
T = 25C
T = 25C
A
A
700
650
450
400
350
300
250
600
550
500
450
1
2
3
5
10
20 30
50
100
0.1
0.2 0.3 0.5
1
2
3
5
10
I , Forward Current (mA)
F
I , Forward Current (mA)
F
Figure 3. Forward Voltage vs. Forward Current
Figure 4. Forward Voltage vs. Forward Current
VF − 1.0 to 100 mA
VF − 0.1 to 10 mA
1.6
1.4
1.2
1.0
0.8
0.6
900
800
T = 25C
Typical
A
700
600
500
400
300
T = −40C
A
T = 25C
A
T = 65C
A
10
20
30
50
100
200 300 500 800
0.01
0.03
0.1
0.3
1
3
10
I , Forward Current (mA)
F
I , Forward Current (mA)
F
Figure 5. Forward Voltage vs. Forward Current
Figure 6. Forward Voltage vs. Ambient
VF − 10 to 800 mA
Temperature, VF − 0.01 to 20 mA (−40 to +655C)
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2
1N4149
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
4.0
0.90
0.85
0.80
T = 25C
T = 25C
A
A
3.5
3.0
2.5
2.0
1.5
1.0
I = I = 10 mA
F
R
R
= 100 W
loop
0.75
0
2
4
6
8
10
12
14
10
20
30
40
50
60
I , Reverse Recovery Current (mA)
rr
V , Reverse Voltage (V)
R
Figure 7. Total Capacitance
Figure 8. Reverse Recovery Time vs. Reverse
Recovery Current
500
500
400
400
300
200
300
200
100
0
100
0
0
50
100
150
0
50
100
150
200
T , Ambient Temperature (5C)
Figure 9. Average Rectified Current (IF(AV)) vs.
Ambient Temperature (TA)
Temperature (5C)
Figure 10. Power Derating Curve
A
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 017AG
ISSUE O
DATE 31 AUG 2016
T50 = 25.40 MIN (2X)
T26 = 14.00 MIN (2X)
4.56
3.05
0.533
0.460
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC DO−204, VARIATION AH.
B) HERMETICALLY SEALED GLASS PACKAGE.
C) PACKAGE WEIGHT IS 0.137 GRAM.
D) ALL DIMENSIONS ARE IN MILLIMETERS.
1.91
1.53
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13443G
AXIAL LEAD
PAGE 1 OF 1
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