1N4454TR [ONSEMI]
高导通超快速二极管;
| 型号： | 1N4454TR |
| 厂家： | 
ONSEMI |
| 描述： | 高导通超快速二极管 二极管 |
| 文件： | 总3页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
High Conductance
Ultra Fast Diode
1N4454
AXIAL LEAD
(DO−35)
CASE 017AG
Sourced from Process 1R. See MMBD1201−1205 for characteristics.
(Color Band Denotes Cathode)
ABSOLUTE MAXIMUM RATINGS
A
(T = 25°C unless otherwise noted) (Notes 1, 2, 3)
MARKING DIAGRAM
Symbol
Rating
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Value
50
Unit
V
W
IV
I
O
200
400
600
mA
mA
mA
A
X Y
I
F
i
f
Recurrent Peak Forward Current
4454 = Specific Device Code
= Date Code
Band Color: Black
XY
i
Peak Forward Surge Current
Pulse Width = 1.0 s
Pulse Width = 1.0 ms
f(surge)
1.0
4.0
T
Storage Temperature Range
−65 to +200
°C
°C
STG
ORDERING INFORMATION
T
J
Operating Junction Temperature
175
†
Device
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are limiting values above which the serviceability of any
semiconductor devices may be impaired.
2. These ratings are based on a maximum junction temperature of 200°C.
3. These are steady limits. The factory should be consulted on applications
involving pulsed or low duty cycle operations.
1N4454
DO−35
(Pb−Free)
5,000 Units /
Bulk
1N4454TR
DO−35
(Pb−Free)
10,000 Units /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Symbol
Parameter
Max
Unit
P
D
Total Power Dissipation
Derate above 25°C
500
3.33
mW
mW/°C
R
Thermal Resistance, Junction to Ambient
300
°C/W
q
JA
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
Symbol
Parameter
Breakdown Voltage
Reverse Current
Conditions
Min
Max
Unit
B
V
I
= 5.0 mA
75
−
V
R
I
R
V
V
= 50 V
−
−
100
100
nA
mA
R
R
= 50 V, T = 150°C
A
V
F
Forward Voltage
I = 250 mA
505
550
610
−
575
650
710
1.0
mV
mV
mV
V
F
I = 1.0 mA
F
I = 2.0 mA
F
I = 10 mA
F
C
Diode Capacitance
V
= 0, f = 1.0 MHz
−
−
4.0
4.0
pF
ns
O
R
T
RR
Reverse Recovery Time
I = 10 mA, V = 1.0 V, I = 1.0 mA, R = 100 W
F R rr L
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
© Semiconductor Components Industries, LLC, 1997
1
Publication Order Number:
June, 2023 − Rev. 2
1N4454/D
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 017AG
ISSUE O
DATE 31 AUG 2016
T50 = 25.40 MIN (2X)
T26 = 14.00 MIN (2X)
4.56
3.05
0.533
0.460
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC DO−204, VARIATION AH.
B) HERMETICALLY SEALED GLASS PACKAGE.
C) PACKAGE WEIGHT IS 0.137 GRAM.
D) ALL DIMENSIONS ARE IN MILLIMETERS.
1.91
1.53
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13443G
AXIAL LEAD
PAGE 1 OF 1
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