1N457TR [ONSEMI]
高电导、低泄漏二极管;
| 型号： | 1N457TR |
| 厂家： | 
ONSEMI |
| 描述： | 高电导、低泄漏二极管 二极管 |
| 文件： | 总3页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Small Signal Diode
1N457, 1N457A
ABSOLUTE MAXIMUM RATINGS
A
AXIAL LEAD
(DO−35)
(T = 25°C unless otherwise noted) (Notes 1, 2, 3)
CASE 017AG
Symbol
Rating
Value
70
Unit
V
(Color Band Denotes Cathode)
V
RRM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
I
200
mA
A
F(AV)
MARKING DIAGRAM
I
Non−repetitive Peak Forward Surge
Current
FSM
Pulse Width = 1.0 s
Pulse Width = 1.0 ms
1.0
4.0
T
Storage Temperature Range
−65 to +200
°C
°C
STG
T
J
Operating Junction Temperature
175
457 / 457A = Specific Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
XY
= Date Code
Band Color: Black
1. These ratings are limiting values above which the serviceability of any
semiconductor device may be impaired.
2. These ratings are based on a maximum junction temperature of 200°C.
3. These are steady limits. The factory should be consulted on applications
involving pulsed or low duty cycle operations.
ORDERING INFORMATION
†
Device
Package
Shipping
1N457
DO−35
(Pb−Free)
5,000 Units /
Bulk
THERMAL CHARACTERISTICS
Symbol
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Max
500
300
Unit
mW
1N457A
1N457TR
DO−35
(Pb−Free)
5,000 Units /
Bulk
P
D
R
°C/W
q
JA
DO−35
(Pb−Free)
10,000 Units /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Max
Unit
V
Breakdown Voltage
Forward Voltage
I
= 100 mA
70
−
V
R
R
V
1N457
1N457A
I = 20 mA
−
−
1.0
1.0
V
V
F
F
I = 100 mA
F
I
Reverse Leakage
Total Capacitance
V
V
= 60 V
−
−
25
5
nA
R
R
R
= 60 V, T = 150°C
mA
A
C
1N457
V
R
= 0, f = 1.0 MHz
−
8.0
pF
T
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
June, 2023 − Rev. 2
1N457A/D
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 017AG
ISSUE O
DATE 31 AUG 2016
T50 = 25.40 MIN (2X)
T26 = 14.00 MIN (2X)
4.56
3.05
0.533
0.460
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC DO−204, VARIATION AH.
B) HERMETICALLY SEALED GLASS PACKAGE.
C) PACKAGE WEIGHT IS 0.137 GRAM.
D) ALL DIMENSIONS ARE IN MILLIMETERS.
1.91
1.53
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13443G
AXIAL LEAD
PAGE 1 OF 1
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