1N485BTR [ONSEMI]

通用低泄露二极管;
1N485BTR
型号: 1N485BTR
厂家: ONSEMI    ONSEMI
描述:

通用低泄露二极管

二极管
文件: 总3页 (文件大小:117K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
Small Signal Diode  
1N485B  
AXIAL LEAD (DO−35)  
CASE 017AG  
(Color Band Denotes Cathode)  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
(Notes 1, 2, 3)  
A
Symbol  
Parameter  
Value  
200  
Unit  
V
V
RRM  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
MARKING DIAGRAM  
I
200  
mA  
A
F(AV)  
I
Non−repetitive Peak Forward Surge Current  
Pulse Width = 1.0 s  
Pulse Width = 1.0 ms  
485  
B
XY  
FSM  
1.0  
4.0  
T
Storage Temperature Range  
−65 to +200  
175  
°C  
°C  
stg  
485B = Specific Device Code  
XY = Date Code  
T
Operating Junction Temperature  
J
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. These ratings are limiting values above which the serviceability of the diode  
may be impaired.  
ORDERING INFORMATION  
2. These ratings are based on a maximum junction temperature of 200°C.  
3. These are steady limits. The factory should be consulted on applications  
involving pulsed or low duty cycle operations.  
Device  
Package  
Shipping  
1N485B  
DO−35  
(Pb−Free, Halide Free)  
5000 Units /  
Bulk Bag  
THERMAL CHARACTERISTICS  
1N485BTR  
10000 Units /  
Tape & Reel  
Symbol  
Parameter  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
Value  
500  
Unit  
mW  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
P
D
R
q
JA  
300  
°C/W  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Symbol  
Parameter  
Test Conditions  
Min Max Unit  
V
R
Breakdown  
Voltage  
I
R
= 5 mA  
200  
V
V
Forward Voltage  
Reverse Current  
I = 100 mA  
1.0  
V
F
F
I
R
V
R
V
R
= 175 V  
= 175 V, T = 150°C  
25  
5
nA  
mA  
A
Product parametric performance is indicated in the Electrical Characteristics for  
the listed test conditions, unless otherwise noted. Product performance may not  
be indicated by the Electrical Characteristics if operated under different  
conditions.  
© Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
June, 2023 − Rev. 1  
1N485B/D  
 
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
AXIAL LEAD  
CASE 017AG  
ISSUE O  
DATE 31 AUG 2016  
T50 = 25.40 MIN (2X)  
T26 = 14.00 MIN (2X)  
4.56  
3.05  
0.533  
0.460  
NOTES: UNLESS OTHERWISE SPECIFIED  
A) PACKAGE STANDARD REFERENCE:  
JEDEC DO204, VARIATION AH.  
B) HERMETICALLY SEALED GLASS PACKAGE.  
C) PACKAGE WEIGHT IS 0.137 GRAM.  
D) ALL DIMENSIONS ARE IN MILLIMETERS.  
1.91  
1.53  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13443G  
AXIAL LEAD  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “asis” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems  
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
Technical Library: www.onsemi.com/design/resources/technicaldocumentation  
onsemi Website: www.onsemi.com  
ONLINE SUPPORT: www.onsemi.com/support  
For additional information, please contact your local Sales Representative at  
www.onsemi.com/support/sales  

相关型号:

1N485BX

Rectifier Diode, 1 Element, 0.15A, 200V V(RRM), Silicon,
MICROSEMI

1N485C

silicon diode
ETC

1N486

Diode 200V 0.5A 2-Pin DO-35 T/R
NJSEMI

1N4860

Diode
NJSEMI

1N4863

Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-35,
CENTRAL

1N4863

Rectifier, Switching; Max Peak Repetitive Reverse Voltage: 0.2; Max TMS Bridge Input Voltage: 50; Max DC Reverse Voltage: 0.05; Package: DO-35
DIGITRON

1N4863-PBF

Rectifier Diode
DIGITRON

1N4863BK

Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-35,
CENTRAL

1N4863BKLEADFREE

Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-35,
CENTRAL

1N4863LEADFREE

Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-35,
CENTRAL

1N4863TR-RECU

Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-35,
CENTRAL

1N4863TRLEADFREE

Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-35,
CENTRAL