1N5347G [ONSEMI]
10V, 5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, LEAD FREE, PLASTIC, CASE 017AA-01, 2 PIN;型号: | 1N5347G |
厂家: | ONSEMI |
描述: | 10V, 5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, LEAD FREE, PLASTIC, CASE 017AA-01, 2 PIN 测试 二极管 |
文件: | 总7页 (文件大小:106K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1N5333B Series
Preferred Device
5 Watt Surmetict
40 Zener Voltage Regulators
This is a complete series of 5 Watt Zener diodes with tight limits and
better operating characteristics that reflect the superior capabilities of
silicon-oxide passivated junctions. All this in an axial lead,
transfer-molded plastic package that offers protection in all common
environmental conditions.
http://onsemi.com
Cathode
Anode
Features
•ꢀZener Voltage Range - 3.3 V to 200 V
•ꢀESD Rating of Class 3 (>16 kV) per Human Body Model
•ꢀSurge Rating of up to 180 W @ 8.3 ms
•ꢀMaximum Limits Guaranteed on up to Six Electrical Parameters
•ꢀPb-Free Packages are Available*
AXIAL LEAD
CASE 017AA
PLASTIC
Mechanical Characteristics
CASE: Void free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MARKING DIAGRAM
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
260°C, 1/16 in. from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
A
1N
53xxB
YYWWG
G
MAXIMUM RATINGS
A
= Assembly Location
Rating
Symbol
Value
Unit
1N53xxB = Device Number
(Refer to Tables on Pages 3 & 4)
= Year
Max. Steady State Power Dissipation
@ T = 75°C, Lead Length = 3/8 in
Derate above 75°C
P
D
5
W
YY
WW
G
L
= Work Week
40
mW/°C
°C
= Pb-Free Package
Operating and Storage
Temperature Range
T , T
J
-65 to +200
stg
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
†
Device
Package
Shipping
1N53xxB, G
Axial Lead
(Pb-Free)
1000 Units/Box
1N53xxBRL, G
Axial Lead
(Pb-Free)
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©ꢀ Semiconductor Components Industries, LLC, 2008
January, 2008 - Rev. 10
1
Publication Order Number:
1N5333B/D
1N5333B Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless
A
I
otherwise noted, V = 1.2 V Max @ I = 1.0 A for all types)
F
F
I
F
Symbol
Parameter
V
Reverse Zener Voltage @ I
Reverse Current
Z
ZT
I
ZT
Z
Maximum Zener Impedance @ I
Reverse Current
ZT
ZK
ZT
V
Z
V
R
V
I
I
ZT
V
F
R
I
Z
ZK
Maximum Zener Impedance @ I
ZK
I
Reverse Leakage Current @ V
Breakdown Voltage
R
R
V
R
I
F
Forward Current
V
I
Forward Voltage @ I
F
F
Zener Voltage Regulator
Maximum Surge Current @ T = 25°C
R
A
DV
Reverse Zener Voltage Change
Maximum DC Zener Current
Z
I
ZM
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 1.2 V Max @ I = 1.0 A for all types)
A
F
F
Leakage
Current
Zener Voltage (Note 2)
Zener Impedance (Note 2)
I
DV
I
ZM
(Note 3) (Note 4) (Note 5)
R
Z
V (Volts)
Z
@ I
Z
ZT
@ I
Z
ZK
@ I
I
ZK
I @ V
R R
ZT
ZT
ZK
†
Device
(Note 1)
Device
Marking
Min Nom Max
mA
W
W
mA mA Max Volts
A
Volts
mA
1N5333B, G
1N5334BG
1N5335BG
1N5336BG
1N5337BG
1N5333B 3.14
1N5334B 3.42
1N5335B 3.71
1N5336B 4.09
1N5337B 4.47
3.3
3.6
3.9
4.3
4.7
3.47
3.78
4.10
4.52
4.94
380
350
320
290
260
3
400
500
500
500
450
1
1
1
1
1
300
150
50
1
1
1
1
1
20
0.85
0.8
1440
1320
1220
1100
1010
2.5
2
18.7
17.6
16.4
15.3
0.54
0.49
0.44
2
10
2
5
1N5338BG
1N5339B, G
1N5340B, G
1N5341B, G
1N5342BG
1N5338B 4.85
1N5339B 5.32
1N5340B 5.70
1N5341B 5.89
1N5342B 6.46
5.1
5.6
6.0
6.2
6.8
5.36
5.88
6.30
6.51
7.14
240
220
200
200
175
1.5
1
400
400
300
200
200
1
1
1
1
1
1
1
1
2
14.4
13.4
12.7
12.4
11.5
0.39
0.25
0.19
0.1
930
865
790
765
700
1
1
3
1
1
3
1
10
5.2
0.15
1N5343BG
1N5344B, G
1N5345B, G
1N5346BG
1N5347B, G
1N5343B 7.13
1N5344B 7.79
1N5345B 8.27
1N5346B 8.65
1N5347B 9.50
7.5
8.2
8.7
9.1
10
7.88
8.61
9.14
9.56
10.5
175
150
150
150
125
1.5
1.5
2
200
200
200
150
125
1
1
1
1
1
10
10
10
7.5
5
5.7
6.2
6.6
6.9
7.6
10.7
10
0.15
0.2
630
580
545
520
475
9.5
9.2
8.6
0.2
2
0.22
0.22
2
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
1. TOLERANCE AND TYPE NUMBER DESIGNATION: The JEDEC type numbers shown indicate a tolerance of 5%.
2. ZENER VOLTAGE (V ) and IMPEDANCE (I and I ): Test conditions for zener voltage and impedance are as follows: I is applied
Z
ZT
ZK
Z
40 10 ms prior to reading. Mounting contacts are located 3/8″ to 1/2″ from the inside edge of mounting clips to the body of the diode
(T = 25°C +8°C, -2°C).
A
3. SURGE CURRENT (I ): Surge current is specified as the maximum allowable peak, non-recurrent square-wave current with a pulse width,
R
PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between
1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in
Figure 6. Mounting contact located as specified in Note 2 (T = 25°C +8°C, -2°C).
A
4. VOLTAGE REGULATION (DV ): The conditions for voltage regulation are as follows: V measurements are made at 10% and then at 50%
Z
Z
of the I max value listed in the electrical characteristics table. The test current time duration for each V measurement is 40 10 ms. Mounting
Z
Z
contact located as specified in Note 2 (T = 25°C +8°C, -2°C).
A
5. MAXIMUM REGULATOR CURRENT (I ): The maximum current shown is based on the maximum voltage of a 5% type unit, therefore,
ZM
it applies only to the B-suffix device. The actual I for any device may not exceed the value of 5 watts divided by the actual V of the device.
ZM
Z
T = 75°C at 3/8″ maximum from the device body.
L
†The “G'' suffix indicates Pb-Free package or Pb-Free packages are available.
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2
1N5333B Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 1.2 V Max @ I = 1.0 A for all types)
A
F
F
Leakage
Current
Zener Voltage (Note 7)
Zener Impedance (Note 7)
I
DV
I
ZM
(Note 8) (Note 9) (Note 10)
R
Z
V (Volts)
Z
@ I
Z
ZT
@ I
Z
ZK
@ I
I
ZK
I @ V
R R
ZT
ZT
ZK
†
Device
(Note 6)
Device
Marking
Min Nom Max
mA
W
W
mA mA Max Volts
A
Volts
mA
1N5348BG
1N5349B, G
1N5350B, G
1N5351BG
1N5352B, G
1N5348B 10.45
1N5349B 11.4
1N5350B 12.35
1N5351B 13.3
1N5352B 14.25
11
12
13
14
15
11.55
12.6
125
100
100
100
75
2.5
2.5
2.5
2.5
2.5
125
125
100
75
1
1
1
1
1
5
2
1
1
1
8.4
9.1
8.0
7.5
7.0
6.7
6.3
0.25
0.25
0.25
0.25
0.25
430
395
365
340
315
13.65
14.7
9.9
10.6
11.5
15.75
75
1N5353B, G
1N5354B, G
1N5355B, G
1N5356BG
1N5357BG
1N5353B 15.2
1N5354B 16.15
1N5355B 17.1
1N5356B 18.05
16
17
18
19
20
16.8
17.85
18.9
19.95
21
75
70
65
65
65
2.5
2.5
2.5
3
75
75
75
75
75
1
1
1
1
1
1
12.2
12.9
13.7
14.4
15.2
6.0
5.8
5.5
5.3
5.1
0.3
0.35
0.4
295
280
264
250
237
0.5
0.5
0.5
0.5
0.4
1N5357B
19
3
0.4
1N5358B, G
1N5359B, G
1N5360BG
1N5361B, G
1N5362BG
1N5358B 20.9
1N5359B 22.8
1N5360B 23.75
1N5361B 25.65
1N5362B 26.6
22
24
25
27
28
23.1
25.2
50
50
50
50
50
3.5
3.5
4
75
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
16.7
18.2
19
4.7
4.4
4.3
4.1
3.9
0.45
0.55
0.55
0.6
216
198
190
176
170
100
110
120
130
26.25
28.35
29.4
5
20.6
21.2
6
0.6
1N5363BG
1N5364BG
1N5365B, G
1N5366B, G
1N5367BG
1N5363B 28.5
1N5364B 31.35
1N5365B 34.2
1N5366B 37.05
1N5367B 40.85
30
33
36
39
43
31.5
34.65
37.8
40
40
30
30
30
8
140
150
160
170
190
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
22.8
25.1
27.4
29.7
32.7
3.7
3.5
3.5
3.1
2.8
0.6
0.6
158
144
132
122
110
10
11
14
20
0.65
0.65
0.7
40.95
45.15
1N5368BG
1N5369B, G
1N5370B, G
1N5371BG
1N5372BG
1N5368B 44.65
1N5369B 48.45
1N5370B 53.2
47
51
56
60
62
49.35
53.55
58.8
63
25
25
20
20
20
25
27
35
40
42
210
230
280
350
400
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
35.8
38.8
42.6
45.5
47.1
2.7
2.5
2.3
2.2
2.1
0.8
0.9
100
93
86
79
76
1.0
1N5371B
57
1.2
1N5372B 58.9
65.1
1.35
1N5373B, G
1N5374BG
1N5375BG
1N5377BG
1N5373B 64.6
1N5374B 71.25
1N5375B 77.9
1N5377B 86.45
68
75
82
91
71.4
78.75
86.1
20
20
15
15
44
45
65
75
500
620
720
760
1
1
1
1
0.5
0.5
0.5
0.5
51.7
56
2.0
1.9
1.8
1.6
1.52
1.6
70
63
62.2
69.2
1.8
58
95.55
2.2
52.5
1N5378B, G
1N5380BG
1N5381BG
1N5378B
1N5380B
95
100
120
105
126
12
10
10
90
800
1150
1250
1
1
1
0.5
0.5
0.5
76
1.5
1.3
1.2
2.5
2.5
2.5
47.5
39.5
36.6
114
170
190
91.2
98.8
1N5381B 123.5 130 136.5
1N5383B, G
1N5384BG
1N5386BG
1N5387BG
1N5388B, G
1N5383B 142.5 150 157.5
8
8
5
5
5
330
350
430
450
480
1500
1650
1750
1850
1850
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
114
122
137
144
152
1.1
1.1
1.0
0.9
0.9
3.0
3.0
4.0
5.0
5.0
31.6
29.4
26.4
25
1N5384B
1N5386B
152
171
160
180
168
189
1N5387B 180.5 190 199.5
1N5388B 190 200 210
23.6
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
6. TOLERANCE AND TYPE NUMBER DESIGNATION: The JEDEC type numbers shown indicate a tolerance of 5%.
7. ZENER VOLTAGE (V ) and IMPEDANCE (I and I ): Test conditions for zener voltage and impedance are as follows: I is applied
Z
ZT
ZK
Z
40 10 ms prior to reading. Mounting contacts are located 3/8″ to 1/2″ from the inside edge of mounting clips to the body of the diode
(T = 25°C +8°C, -2°C).
A
8. SURGE CURRENT (I ): Surge current is specified as the maximum allowable peak, non-recurrent square-wave current with a pulse width,
R
PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between
1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in
Figure 6. Mounting contact located as specified in Note 7 (T = 25°C +8°C, -2°C).
A
9. VOLTAGE REGULATION (DV ): The conditions for voltage regulation are as follows: V measurements are made at 10% and then at 50%
Z
Z
of the I max value listed in the electrical characteristics table. The test current time duration for each V measurement is 40 10 ms. Mounting
Z
Z
contact located as specified in Note 7 (T = 25°C +8°C, -2°C).
A
10.MAXIMUM REGULATOR CURRENT (I ): The maximum current shown is based on the maximum voltage of a 5% type unit, therefore,
ZM
it applies only to the B-suffix device. The actual I for any device may not exceed the value of 5 watts divided by the actual V of the device.
ZM
Z
T = 75°C at 3/8″ maximum from the device body.
L
†The “G'' suffix indicates Pb-Free package or Pb-Free packages are available.
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3
1N5333B Series
40
30
20
L
L
10
0
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
0
0.2
0.4
0.6
0.8
1
L, LEAD LENGTH TO HEATSINK (INCH)
Figure 1. Typical Thermal Resistance
TEMPERATURE COEFFICIENTS
10
8
6
4
2
0
RANGE
-2
7
3
4
5
6
8
9
10
V , ZENER VOLTAGE @ I (VOLTS)
Z ZT
Figure 2. Temperature Coefficient‐Range for Units 3 to 10 Volts
300
200
100
RANGE
50
30
20
10
5
0
20 40 60 80 100 120 140 160 180 200 220
V , ZENER VOLTAGE @ I (VOLTS)
Z
ZT
Figure 3. Temperature Coefficient‐Range for Units 10 to 220 Volts
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4
1N5333B Series
20
10
5
D = 0.5
D = 0.2
P
PK
t
1
D = 0.1
t
2
2
1
D = 0.05
DUTY CYCLE, D = t /t
1
2
SINGLE PULSE D T = q (t)P
D = 0.01
NOTE: BELOW 0.1 SECOND, THERMAL
NOTE: RESPONSE CURVE IS APPLICABLE
NOTE: TO ANY LEAD LENGTH (L).
JL
JL
REPETITIVE PULSES D T = q (t, D)P
PK
PK
0.5
0.2
JL
JL
D = 0
0.001
0.005 0.01
0.05
0.1
0.5
1
5
10
20
50
100
t, TIME (SECONDS)
Figure 4. Typical Thermal Response
L, Lead Length = 3/8 Inch
40
20
30
20
PWĂ=Ă1Ăms*
10
5
V Ă=Ă3.3ĂV
Z
10
PWĂ=Ă8.3Ăms*
4
2
1
2
1
0.5
V Ă=Ă200ĂV
Z
0.4
0.2
0.1
*SQUARE WAVE
PWĂ=Ă100Ăms*
PLOTTED FROM INFORMATION
GIVEN IN FIGURE 5
0.2
0.1
PWĂ=Ă1000Ăms*
30 40 60 80 100
NOMINAL V (V)
20
200
3
4
6
8 10
1
10
100
PW, PULSE WIDTH (ms)
1000
Z
Figure 5. Maximum Non‐Repetitive Surge Current
versus Nominal Zener Voltage
(See Note 3)
Figure 6. Peak Surge Current versus Pulse Width
(See Note 3)
1000
100
10
TĂ=Ă25°C
TĂ=Ă25°C
1000
100
10
T Ă=Ă25°C
C
1
1
0.1
0.1
10
20
30
40
50
60
70
80
1
2
3
4
5
6
7
8
9
10
V , ZENER VOLTAGE (VOLTS)
Z
V , ZENER VOLTAGE (VOLTS)
Z
Figure 7. Zener Voltage versus Zener Current
VZĂ=Ă3.3 thru 10 Volts
Figure 8. Zener Voltage versus Zener Current
VZ = 11 thru 75 Volts
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5
1N5333B Series
100
10
1
0.1
80
100
120
140
160
180
200
220
V , ZENER VOLTAGE (VOLTS)
Z
Figure 9. Zener Voltage versus Zener Current
VZ = 82 thru 200 Volts
APPLICATION NOTE
Since the actual voltage available from a given Zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
For worst‐case design, using expected limits of I , limits
Z
of P and the extremes of T (DT ) may be estimated.
D
J
J
Changes in voltage, V , can then be found from:
Z
DV = qVZ DTJ
q
, the Zener voltage temperature coefficient, is found
VZ
from Figures 2 and 3.
Lead Temperature, T , should be determined from:
L
TL = qLA PD + TA
Under high power‐pulse operation, the Zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
q
power dissipation.
is the lead‐to‐ambient thermal resistance and P is the
D
LA
Junction Temperature, T , may be found from:
J
TJ = TL + DTJL
Data of Figure 4 should not be used to compute surge
capability. Surge limitations are given in Figure 5. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 5 be exceeded.
DT is the increase in junction temperature above the lead
JL
temperature and may be found from Figure 4 for a train of
power pulses or from Figure 1 for dc power.
DTJL = qJL PD
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6
1N5333B Series
PACKAGE DIMENSIONS
SURMETIC 40, AXIAL LEAD
CASE 017AA-01
ISSUE O
NOTES:
1. CONTROLLING DIMENSION: INCH
2. LEAD DIAMETER AND FINISH NOT CONTROLLED
WITHIN DIMENSION F.
3. CATHODE BAND INDICATES POLARITY
B
INCHES
DIM MIN MAX
MILLIMETERS
MIN
8.38
3.30
0.94
---
MAX
8.89
3.68
1.09
1.27
31.75
D
A
B
D
F
0.330
0.130
0.037
---
0.350
0.145
0.043
0.050
1.250
K
A
F
K
1.000
25.40
F
K
SURMETIC is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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1N5333B/D
相关型号:
1N5348
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts)
PANJIT
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