1N5926G [ONSEMI]
Zener Diode;
| 型号： | 1N5926G |
| 厂家： | 
ONSEMI |
| 描述： | Zener Diode 测试 二极管 |
| 文件： | 总8页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5913B Series
3 W DO-41 Surmetic 30
Zener Voltage Regulators
This is a complete series of 3 W Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon-oxide passivated junctions. All this in an axial-lead,
transfer-molded plastic package that offers protection in all common
environmental conditions.
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Features
Cathode
Anode
Zener Voltage Range - 3.3 V to 200 V
ESD Rating of Class 3 (>16 KV) per Human Body Model
Surge Rating of 98 W @ 1 ms
Maximum Limits Guaranteed on up to Six Electrical Parameters
Package No Larger than the Conventional 1 W Package
Pb-Free Packages are Available
AXIAL LEAD
CASE 59
PLASTIC
STYLE 1
Mechanical Characteristics
CASE: Void free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
260C, 1/16 from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MARKING DIAGRAM
A
1N
59xxB
YYWWG
G
A
= Assembly Location
1N59xxB = Device Number
MAXIMUM RATINGS
YY
WW
G
= Year
= Work Week
= Pb- Free Package
Rating
Symbol
Value
Unit
Max. Steady State Power Dissipation
P
3
W
D
(Note: Microdot may be in either location)
@ T = 75C, Lead Length = 3/8
L
Derate above 75C
24
1
mW/C
ORDERING INFORMATION
Steady State Power Dissipation
P
W
D
†
@ T = 50C
Derate above 50C
Device
Package
Shipping
A
6.67
mW/C
C
1N59xxB, G
Axial Lead
(Pb- Free)
2000 Units/Box
Operating and Storage
Temperature Range
T , T
- 65 to
+200
J
stg
1N59xxBRL, G
Axial Lead
(Pb- Free)
6000/Tape & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb- Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
December, 2019 - Rev. 7
1N5913B/D
1N5913B Series
ELECTRICAL CHARACTERISTICS
(T = 30C unless otherwise noted,
L
I
I
F
V
= 1.5 V Max @ I = 200 mAdc for all types)
F
F
Symbol
Parameter
V
Reverse Zener Voltage @ I
Reverse Current
Z
ZT
I
ZT
V
V
R
V
Z
Z
Maximum Zener Impedance @ I
Reverse Current
ZT
ZK
ZT
I
V
R
ZT
F
I
I
Z
ZK
Maximum Zener Impedance @ I
ZK
I
Reverse Leakage Current @ V
Breakdown Voltage
R
R
V
R
I
F
Forward Current
Zener Voltage Regulator
V
Forward Voltage @ I
F
F
I
Maximum DC Zener Current
ZM
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2
1N5913B Series
ELECTRICAL CHARACTERISTICS (T = 30C unless otherwise noted, V = 1.5 V Max @ I = 200 mAdc for all types)
L
F
F
Zener Voltage (Note 2)
Zener Impedance (Note 3)
Leakage Current
V
(Volts)
@ I
Z
@ I
Z
ZK
@ I
I @ V
R
I
Z
ZT
ZT
ZT
ZK
R
ZM
†
Device
Device
Min
Nom
Max
mA
Ω
Ω
mA
mA Max
Volts
mA
(Note 1)
Marking
1N5913B, G
1N5917B, G
1N5919B, G
1N5920B, G
1N5921B, G
1N5913B
1N5917B
1N5919B
1N5920B
1N5921B
3.14
4.47
5.32
5.89
6.46
3.3
4.7
5.6
6.2
6.8
3.47
4.94
5.88
6.51
7.14
113.6
79.8
66.9
60.5
55.1
10
5
2
2
2.5
500
500
250
200
200
1
1
1
1
1
100
5
5
5
5
1
1.5
3
4
5.2
454
319
267
241
220
1N5923B, G
1N5924B, G
1N5925B, G
1N5926B, G
1N5927B, G
1N5923B
1N5924B
1N5925B
1N5926B
1N5927B
7.79
8.65
9.50
10.45
11.40
8.2
9.1
10
11
8.61
9.56
10.50
11.55
12.60
45.7
41.2
37.5
34.1
31.2
3.5
4
4.5
5.5
6.5
400
500
500
550
550
0.5
0.5
0.25
0.25
0.25
5
5
5
1
1
6.5
7
8
8.4
9.1
182
164
150
136
125
12
1N5929B, G
1N5930B, G
1N5931B, G
1N5932B, G
1N5933B, G
1N5929B
1N5930B
1N5931B
1N5932B
1N5933B
14.25
15.20
17.10
19.00
20.90
15
16
18
20
22
15.75
16.80
18.90
21.00
23.10
25.0
23.4
20.8
18.7
17.0
9
10
12
14
17.5
600
600
650
650
650
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
11.4
12.2
13.7
15.2
16.7
100
93
83
75
68
1N5934B, G
1N5935B, G
1N5936B, G
1N5937B, G
1N5938B, G
1N5934B
1N5935B
1N5936B
1N5937B
1N5938B
22.80
25.65
28.50
31.35
34.20
24
27
30
33
36
25.20
28.35
31.50
34.65
37.80
15.6
13.9
12.5
11.4
10.4
19
23
28
33
38
700
700
750
800
850
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
18.2
20.6
22.8
25.1
27.4
62
55
50
45
41
1N5940B, G
1N5941B, G
1N5942B, G
1N5943B, G
1N5944B, G
1N5940B
1N5941B
1N5942B
1N5943B
1N5944B
40.85
44.65
48.45
53.20
58.90
43
47
51
56
62
45.15
49.35
53.55
58.80
65.10
8.7
8.0
7.3
6.7
6.0
53
67
70
86
100
950
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
32.7
35.8
38.8
42.6
47.1
34
31
29
26
24
1000
1100
1300
1500
1N5946B, G
1N5947B, G
1N5948B, G
1N5950B, G
1N5946B
1N5947B
1N5948B
1N5950B
71.25
77.90
86.45
104.5
75
82
91
78.75
86.10
95.55
115.5
5.0
4.6
4.1
3.4
140
160
200
300
2000
2500
3000
4000
0.25
0.25
0.25
0.25
1
1
1
1
56
20
18
16
13
62.2
69.2
83.6
110
1N5951B, G
1N5952B, G
1N5953B, G
1N5954B, G
1N5955B, G
1N5951B
1N5952B
1N5953B
1N5954B
1N5955B
114
123.5
142.5
152
120
130
150
160
180
126
136.5
157.5
168
3.1
2.9
2.5
2.3
2.1
380
450
600
700
900
4500
5000
6000
6500
7000
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
91.2
98.8
114
121.6
136.8
12
11
10
9
171
189
8
1N5956B, G
1N5956B
190
200
210
1.9
1200
8000
0.25
1
152
7
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
†The “G’’ suffix indicates Pb- Free package available.
1. TOLERANCE AND TYPE NUMBER DESIGNATION
Tolerance designation - device tolerance of 5% are indicated by a “B” suffix.
2. ZENER VOLTAGE (V ) MEASUREMENT
Z
ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (T ) at 30C 1C,
L
3/8 from the diode body.
3. ZENER IMPEDANCE (Z ) DERIVATION
Z
The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the
DC zener current (I or I ) is superimposed on I or I .
ZT
ZK
ZT
ZK
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3
1N5913B Series
5
4
3
L = LEAD LENGTH
TO HEAT SINK
L = 1/8
L = 3/8
2
1
0
L = 1
0
20 40
60
80 100 120 140 160 180 200
T , LEAD TEMPERATURE (C)
L
Figure 1. Power Temperature Derating Curve
30
20
D =0.5
0.2
10
7
5
0.1
3
2
t
1
P
PK
0.05
t
2
DUTY CYCLE, D =t /t
1 2
0.02
0.01
1
0.7
0.5
NOTE: BELOW 0.1 SECOND, THERMAL
RESPONSE CURVE IS APPLICABLE
TO ANY LEAD LENGTH (L).
SINGLE PULSE ΔT = θ (t)P
PK
JL
JL
D = 0
REPETITIVE PULSES ΔT = θ (t,D)P
JL JL PK
0.3
0.0001 0.0002
0.0005 0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
t, TIME (SECONDS)
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch
3
1K
500
2
RECTANGULAR
NONREPETITIVE
1
0.5
T = 125C
A
WAVEFORM
300
200
T = 25C PRIOR
J
0.2
0.1
TO INITIAL PULSE
0.05
100
50
0.02
0.01
0.005
30
20
T = 125C
0.002
0.001
A
0.0005
0.0003
10
1
2
5
10
20
50 100 200 400 1000
0.1 0.2 0.3 0.5
1
2
3
5
10 20 30 50 100
NOMINAL V (VOLTS)
Z
PW, PULSE WIDTH (ms)
Figure 3. Maximum Surge Power
Figure 4. Typical Reverse Leakage
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4
1N5913B Series
APPLICATION NOTE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
ΔT is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for a train of
power pulses (L = 3/8 inch) or from Figure 10 for dc power.
JL
ΔTJL = θJL PD
For worst-case design, using expected limits of I , limits
Z
Lead Temperature, T , should be determined from:
L
of P and the extremes of T (ΔT ) may be estimated.
D
J
J
TL = θLA PD + TA
Changes in voltage, V , can then be found from:
Z
θ
is the lead-to-ambient thermal resistance (C/W) and
LA
ΔV = θVZ ΔTJ
P is the power dissipation. The value for θ will vary and
depends on the device mounting method. θ is generally
30-40C/W for the various clips and tie points in common
use and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
D
LA
θ
, the zener voltage temperature coefficient, is found
VZ
LA
from Figures 5 and 6.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 3 be exceeded.
Using the measured value of T , the junction temperature
may be determined by:
L
TJ = TL + ΔTJL
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5
1N5913B Series
TEMPERATURE COEFFICIENT RANGES
(90% of the Units are in the Ranges Indicated)
10
1000
500
8
6
4
200
100
2
0
RANGE
50
20
10
-2
-4
10
20
50
100
200
400
1000
3
4
5
6
7
8
9
10
11
12
V , ZENER VOLTAGE @ I (VOLTS)
V , ZENER VOLTAGE @ I (VOLTS)
Z
ZT
Z
ZT
Figure 5. Units To 12 Volts
Figure 6. Units 10 To 400 Volts
ZENER VOLTAGE versus ZENER CURRENT
(Figures 7, 8 and 9)
100
50
100
50
30
30
20
20
10
10
5
3
2
5
3
2
1
1
0.5
0.3
0.2
0.5
0.3
0.2
0.1
0.1
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
70
80
90 100
V , ZENER VOLTAGE (VOLTS)
Z
V , ZENER VOLTAGE (VOLTS)
Z
Figure 7. VZ = 3.3 thru 10 Volts
Figure 8. VZ = 12 thru 82 Volts
80
70
60
50
40
30
20
10
0
10
5
2
1
L
L
0.5
T
L
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
0.2
0.1
0
1/8
1/4
3/8
1/2
5/8
3/4
7/8
1
100
150
200
250
300
350
400
L, LEAD LENGTH TO HEAT SINK (INCH)
V , ZENER VOLTAGE (VOLTS)
Z
Figure 9. VZ = 100 thru 400 Volts
Figure 10. Typical Thermal Resistance
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 59−10
ISSUE U
DATE 15 FEB 2005
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO−41 OUTLINE SHALL APPLY
4. POLARITY DENOTED BY CATHODE BAND.
5. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
K
D
STYLE 1
STYLE 2
F
INCHES
DIM MIN MAX
MILLIMETERS
A
MIN
4.10
2.00
0.71
−−−
MAX
5.20
2.70
0.86
1.27
−−−
A
B
D
F
0.161 0.205
0.079 0.106
0.028 0.034
−−− 0.050
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
F
SCALE 1:1
K
1.000
−−− 25.40
K
GENERIC
MARKING DIAGRAM*
A
A
STYLE 1:
STYLE 2:
xxx
xxx
xxx
xxx
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
NO POLARITY
YYWW
YYWW
STYLE 1
STYLE 2
xxx
A
YY
WW
= Specific Device Code
= Assembly Location
= Year
= Work Week
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42045B
AXIAL LEAD
PAGE 1 OF 1
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