1N6278A [ONSEMI]
1500 Watt MosorbE Zener Transient Voltage Transient Voltage; 1500瓦MosorbE齐纳瞬态电压瞬态电压
| 型号： | 1N6278A |
| 厂家： | 
ONSEMI |
| 描述： | 1500 Watt MosorbE Zener Transient Voltage Transient Voltage |
| 文件： | 总8页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N6267A Series
1500 Watt Mosorb Zener
Transient Voltage
Suppressors
Unidirectional*
http://onsemi.com
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high–energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Cathode
Anode
Specification Features:
AXIAL LEAD
CASE 41A
PLASTIC
• Working Peak Reverse Voltage Range – 5.8 V to 214 V
• Peak Power – 1500 Watts @ 1 ms
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 mA Above 10 V
L
1N6
xxxA
1.5KE
xxxA
YYWW
• UL 497B for Isolated Loop Circuit Protection
• Response Time is Typically < 1 ns
Mechanical Characteristics:
L = Assembly Location
1N6xxxA = JEDEC Device Code
1.5KExxxA = ON Device Code
YY = Year
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
500 Units/Box
MAXIMUM RATINGS
1.5KExxxA
Axial Lead
Rating
Symbol
Value
Unit
1.5KExxxARL4
Axial Lead 1500/Tape & Reel
Peak Power Dissipation (Note 1)
P
PK
1500
Watts
@ T ≤ 25°C
L
1N6xxxA
Axial Lead
500 Units/Box
Steady State Power Dissipation
P
D
5.0
Watts
1N6xxxARL4*
Axial Lead 1500/Tape & Reel
@ T ≤ 75°C, Lead Length = 3/8″
L
*1N6302A Not Available in 1500/Tape & Reel
Derated above T = 75°C
20
20
mW/°C
°C/W
L
Thermal Resistance, Junction–to–Lead
Forward Surge Current (Note 2)
R
q
JL
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
I
200
Amps
FSM
@ T = 25°C
A
Operating and Storage
Temperature Range
T , T
– 65 to
+175
°C
J
stg
1. Nonrepetitive current pulse per Figure 5 and derated above T = 25°C per
A
Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses
per minute maximum.
*Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
June, 2002 – Rev. 5
1N6267A/D
1N6267A Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless
I
A
otherwise noted, V = 3.5 V Max., I (Note 3) = 100 A)
F
F
I
F
Symbol
Parameter
I
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
V
C
PP
V
C
V
V
V
Working Peak Reverse Voltage
BR RWM
RWM
V
I
V
F
R
T
I
R
Maximum Reverse Leakage Current @ V
I
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
QV
Maximum Temperature Coefficient of V
I
PP
BR
BR
I
F
Forward Current
Uni–Directional TVS
V
F
Forward Voltage @ I
F
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2
1N6267A Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 3.5 V Max. @ I (Note 3) = 100 A)
A
F
F
Breakdown Voltage
V @ I (Note 7)
C PP
V
RWM
JEDEC
Device
(Note 4)
V
(Note 6) (Volts)
@ I
V
I
PP
(Note 5)
I
R
@ V
QV
BR
BR
T
C
RWM
(Volts)
(mA)
Min
Nom
Max
(mA)
(Volts)
(A)
(%/°C)
Device
1.5KE6.8A
1.5KE7.5A
1.5KE8.2A
1.5KE9.1A
1N6267A
1N6268A
1N6269A
1N6270A
5.8
6.4
7.02
7.78
1000
500
200
50
6.45
7.13
7.79
8.65
6.8
7.5
8.2
9.1
7.14
7.88
8.61
9.55
10
10
10
1
10.5
11.3
12.1
13.4
143
132
124
112
0.057
0.061
0.065
0.068
1.5KE10A
1.5KE11A
1.5KE12A
1.5KE13A
1N6271A
1N6272A
1N6273A
1N6274A
8.55
9.4
10.2
11.1
10
5
5
9.5
10
11
12
13
10.5
11.6
12.6
13.7
1
1
1
1
14.5
15.6
16.7
18.2
103
96
90
0.073
0.075
0.078
0.081
10.5
11.4
12.4
5
82
1.5KE15A
1.5KE16A
1.5KE18A
1.5KE20A
1N6275A
1N6276A
1N6277A
1N6278A
12.8
13.6
15.3
17.1
5
5
5
5
14.3
15.2
17.1
19
15
16
18
20
15.8
16.8
18.9
21
1
1
1
1
21.2
22.5
25.2
27.7
71
67
59.5
54
0.084
0.086
0.088
0.09
1.5KE22A
1.5KE24A
1.5KE27A
1.5KE30A
1N6279A
1N6280A
1N6281A
1N6282A
18.8
20.5
23.1
25.6
5
5
5
5
20.9
22.8
25.7
28.5
22
24
27
30
23.1
25.2
28.4
31.5
1
1
1
1
30.6
33.2
37.5
41.4
49
45
40
36
0.092
0.094
0.096
0.097
1.5KE33A
1.5KE36A
1.5KE39A
1.5KE43A
1N6283A
1N6284A
1N6285A
1N6286A
28.2
30.8
33.3
36.8
5
5
5
5
31.4
34.2
37.1
40.9
33
36
39
43
34.7
37.8
41
1
1
1
1
45.7
49.9
53.9
59.3
33
30
28
0.098
0.099
0.1
45.2
25.3
0.101
1.5KE47A
1.5KE51A
1.5KE56A
1.5KE62A
1N6287A
1N6288A
1N6289
40.2
43.6
47.8
53
5
5
5
5
44.7
48.5
53.2
58.9
47
51
56
62
49.4
53.6
58.8
65.1
1
1
1
1
64.8
70.1
77
23.2
21.4
19.5
17.7
0.101
0.102
0.103
0.104
1N6290A
85
1.5KE68A
1.5KE75A
1.5KE82A
1.5KE91A
1N6291A
1N6292A
1N6293A
1N6294A
58.1
64.1
70.1
77.8
5
5
5
5
64.6
71.3
77.9
86.5
68
75
82
91
71.4
78.8
86.1
95.5
1
1
1
1
92
16.3
14.6
13.3
12
0.104
0.105
0.105
0.106
103
113
125
1.5KE100A
1.5KE110A
1.5KE120A
1.5KE130A
1N6295A
1N6296A
1N6297A
1N6298A
85.5
94
102
111
5
5
5
5
95
100
110
120
130
105
116
126
137
1
1
1
1
137
152
165
179
11
0.106
0.107
0.107
0.107
105
114
124
9.9
9.1
8.4
1.5KE150A
1.5KE160A
1.5KE170A
1.5KE180A
1N6299A
1N6300A
1N6301A
1N6302A*
128
136
145
154
5
5
5
5
143
152
162
171
150
160
170
180
158
168
179
189
1
1
1
1
207
219
234
246
7.2
6.8
6.4
6.1
0.108
0.108
0.108
0.108
1.5KE200A
1.5KE220A
1.5KE250A
1N6303A
171
185
214
5
5
5
190
209
237
200
220
250
210
231
263
1
1
1
274
328
344
5.5
4.6
5
0.108
0.109
0.109
3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
4. Indicates JEDEC registered data
5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
greater than the dc or continuous peak operating voltage level.
), which should be equal to or
RWM
6. V measured at pulse test current I at an ambient temperature of 25°C
BR
T
7. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
*Not Available in the 1500/Tape & Reel
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3
1N6267A Series
100
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
100
80
60
10
40
20
0
1
0.1Ăms
1Ăms
10Ăms
100Ăms
1 ms
10 ms
0
25
50
75
100 125 150 175 200
T , AMBIENT TEMPERATURE (°C)
A
t , PULSE WIDTH
P
Figure 1. Pulse Rating Curve
Figure 2. Pulse Derating Curve
1N6373, ICTE-5, MPTE-5,
through
1N6267A/1.5KE6.8A
through
1N6389, ICTE-45, C, MPTE-45, C
1N6303A/1.5KE200A
10,000
1000
10,000
MEASURED @
ZERO BIAS
MEASURED @
ZERO BIAS
1000
100
10
MEASURED @ V
RWM
MEASURED @ V
RWM
100
10
1
10
100
1000
1
10
100
1000
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
Figure 3. Capacitance versus Breakdown Voltage
PULSE WIDTH (t ) IS DEFINED AS
P
THAT POINT WHERE THE PEAK
t
r
3/8″
CURRENT DECAYS TO 50% OF I
tr ≤ 10Ăms
.
PP
PEAK VALUE - I
PP
100
50
0
3/8″
5
4
3
I
PP
HALF VALUE -
2
2
t
P
1
0
0
1
2
t, TIME (ms)
3
4
0
25
50
75
100 125 150 175
200
T , LEAD TEMPERATURE (°C)
L
Figure 4. Steady State Power Derating
Figure 5. Pulse Waveform
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4
1N6267A Series
1N6373, ICTE-5, MPTE-5,
through
1.5KE6.8CA
through
1N6389, ICTE-45, C, MPTE-45, C
1.5KE200CA
1000
500
1000
V
Ă=Ă6.8 to 13ĂV
V
Ă=Ă6.8 to 13ĂV
20ĂV
BR(NOM)
BR(NOM)
T Ă=Ă25°C
P
T Ă=Ă25°C
L
t Ă=Ă10Ăms
P
L
t Ă=Ă10Ăms
500
20ĂV
24ĂV
43ĂV
75ĂV
43ĂV
24ĂV
200
100
50
200
100
50
20
20
180ĂV
120ĂV
10
5
10
5
2
1
2
1
0.3
0.5 0.7
1
2
3
5
7
10
20 30
(VOLTS)
0.3
0.5 0.7
1
2
3
5
7
10
20 30
DV , INSTANTANEOUS INCREASE IN V ABOVE V
BR
DV , INSTANTANEOUS INCREASE IN V ABOVE V (VOLTS)
BR(NOM)
BR
BR(NOM)
BR
BR
Figure 6. Dynamic Impedance
1
0.7
0.5
0.3
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
0.02
100 ms
10 ms
0.01
0.1
0.2
0.5
1
2
5
10
20
50 100
D, DUTY CYCLE (%)
Figure 7. Typical Derating Factor for Duty Cycle
APPLICATION NOTES
RESPONSE TIME
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the
Some input impedance represented by Z is essential to
in
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
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5
1N6267A Series
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
TYPICAL PROTECTION CIRCUIT
Z
in
LOAD
V
in
V
L
V (TRANSIENT)
in
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
V
V
V (TRANSIENT)
in
V
L
V
L
V
in
t
d
t = TIME DELAY DUE TO CAPACITIVE EFFECT
D
t
t
Figure 8.
Figure 9.
UL RECOGNITION*
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric Voltage-
Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
*Applies to 1.5KE6.8A, CA thru 1.5KE250A, CA
CLIPPER BIDIRECTIONAL DEVICES
1. Clipper-bidirectional devices are available in the
1.5KEXXA series and are designated with a “CA”
suffix; for example, 1.5KE18CA. Contact your nearest
ON Semiconductor representative.
3. The 1N6267A through 1N6303A series are JEDEC
registered devices and the registration does not include
a “CA” suffix. To order clipper-bidirectional devices
one must add CA to the 1.5KE device title.
2. Clipper-bidirectional part numbers are tested in both
directions to electrical parameters in preceding table
(except for V which does not apply).
F
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6
1N6267A Series
OUTLINE DIMENSIONS
Transient Voltage Suppressors – Axial Leaded
1500 Watt Mosorb
MOSORB
CASE 41A–04
ISSUE D
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
3. LEAD FINISH AND DIAMETER UNCONTROLLED
IN DIMENSION P.
4. 041A-01 THRU 041A-03 OBSOLETE, NEW
STANDARD 041A-04.
K
INCHES
DIM MIN MAX
MILLIMETERS
P
MIN
8.50
4.80
0.96
25.40
---
MAX
9.50
5.30
1.06
---
A
B
D
K
P
0.335
0.189
0.038
1.000
---
0.374
0.209
0.042
---
P
A
0.050
1.27
K
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7
1N6267A Series
Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
1N6267A/D
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