2N4401BU [ONSEMI]
NPN Bipolar Junction Transistor, TO-92;
| 型号： | 2N4401BU |
| 厂家： | 
ONSEMI |
| 描述： | NPN Bipolar Junction Transistor, TO-92 PC 开关 晶体管 |
| 文件： | 总10页 (文件大小：659K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
2N4401 / MMBT4401
NPN General-Purpose Amplifier
Description
This device is designed for use as a medium power
amplifier and switch requiring collector currents up to
500 mA.
C
E
TO-92
EB C
SOT-23
Mark:2X
B
Figure 1. 2N4401 Device Package
Figure 2. MMBT4401 Device Package
Ordering Information
Part Number
2N4401BU
2N4401TF
Marking
2N4401
2N4401
2N4401
2N4401
2N4401
2X
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
SOT-23 3L
Packing Method
Bulk
Tape and Reel
Tape and Reel
Ammo
2N4401TFR
2N4401TA
2N4401TAR
MMBT4401
Ammo
Tape and Reel
© 2001 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
Publication Order Number:
MMBT4401/D
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Collector-Emitter Voltage
Value
Unit
V
40
60
Collector-Base Voltage
Emitter-Base Voltage
V
6.0
V
Collector Current - Continuous
600
mA
°C
TJ, TSTG Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
-55 to +150
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Max.
Symbol
Parameter
Total Device Dissipation
Unit
2N4401(3)
625
MMBT4401(4)
350
2.8
mW
mW/°C
°C/W
PD
Derate Above 25°C
5.0
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
83.3
200
357
°C/W
Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
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2
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
Collector-Emitter Breakdown
Voltage(5)
V(BR)CEO
IC = 1.0 mA, IB = 0
40
V
Collector-Base Breakdown
Voltage
V(BR)CBO
IC = 0.1 mA, IE = 0
60
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE = 0.1 mA, IC = 0
6.0
V
IBL
Base Cut-Off Current
VCE = 35 V, VEB = 0.4 V
VCE = 35 V, VEB = 0.4 V
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 150 mA, VCE = 1.0 V
IC = 500 mA, VCE = 2.0 V
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.1
0.1
μA
μA
ICEX
Collector Cut-Off Current
20
40
hFE
DC Current Gain(5)
80
100
40
300
0.40
0.75
0.95
1.20
Collector-Emitter Saturation
Voltage(5)
VCE(sat)
V
V
0.75
250
VBE(sat) Base-Emitter Saturation Voltage(5)
IC = 20 mA, VCE = 10 V,
f = 100 MHz
fT
Current Gain - Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
MHz
pF
VCB = 5.0 V, IE = 0,
f = 140 kHz
Ccb
Ceb
hie
6.5
30
VBE = 0.5 V, IC = 0,
f = 140 kHz
pF
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
1.0
0.1
40
15.0
8.0
500
30
kΩ
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
hre
hfe
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
x10-4
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
hoe
1.0
μmhos
td
tr
Delay Time
Rise Time
Storage Time
Fall Time
15
20
ns
ns
ns
ns
VCC = 30 V, VEB = 2 V,
I
C = 150 mA, IB1 = 15 mA
ts
tf
225
30
VCC = 30 V, IC = 150 mA,
I
B1 = IB2 = 15 mA
Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
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3
Typical Performance Characteristics
500
0.4
0.3
0.2
0.1
V
= 5V
CE
β = 10
400
300
200
100
0
125 °C
25 °C
125 °C
25 °C
- 40 °C
- 40 °C
0.1
0.3
1
3
10
30
100 300
1
10
100
500
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Figure 4. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Typical Pulsed Current Gain vs.
Collector Current
1
β = 10
V
= 5V
1
CE
0.8
0.6
0.4
0.2
- 40 °C
- 40 °C
0.8
25 °C
25 °C
125 °C
125 °C
0.6
0.4
1
10
100
500
0.1
1
10
25
I
C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Figure 6. Base-Emitter On Voltage vs.
Collector Current
Figure 5. Base-Emitter Saturation Voltage
vs. Collector Current
500
20
16
12
8
f = 1 MHz
V
= 40V
100
10
1
CB
C
te
0.1
C
ob
4
25
50
75
100
125
150
0.1
1
10
100
TA - AMBIENT TEMPERATURE (°C)
REVERSE BIAS VOLTAGE (V)
Figure 8. Emitter Transition and Output Capacitance
vs. Reverse Bias Voltage
Figure 7. Collector Cut-Off Current vs.
Ambient Temperature
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4
Typical Performance Characteristics (Continued)
400
400
320
240
160
80
I
I
10
c
c
IB1= IB2
=
IB1= IB2
=
10
320
240
160
80
V
= 25 V
V
= 25 V
cc
cc
t
s
t
r
t
off
t
f
t
on
t
d
0
0
10
100
- COLLECTOR CURRENT (mA)
1000
10
100
- COLLECTOR CURRENT (mA)
1000
I
I
C
C
Figure 10. Switching Times vs.Collector Current
Figure 9. Turn-On and Turn-Off Times vs.
Collector Current
8
V
T
= 10 V
= 25oC
CE
A
1
6
4
2
0
SOT-223
0.75
TO-92
h
oe
0.5
0.25
0
SOT-23
h
h
re
fe
h
ie
0
25
50
75
100
125
150
0
10
20
30
40
50
60
TEMPERATURE (oC)
I C - COLLECTOR CURRENT (mA)
Figure 11. Power Dissipation vs.
Ambient Temperature
Figure 12. Common Emitter Characteristics
2.4
2
1.3
V
C
= 10 V
I
T
= 10 mA
= 25oC
CE
C
A
h
1.25
1.2
fe
I
= 10 mA
h
re
h
ie
1.15
1.1
h
fe
1.6
1.2
0.8
0.4
0
h
ie
1.05
1
h
oe
h
h
0.95
0.9
re
0.85
0.8
oe
0.75
0
5
10
15
20
25
30
35
0
20
40
60
80
100
o
VCE - COLLECTOR VOLTAGE (V)
TA - AMBIENT TEMPERATURE ( C)
Figure 13. Common Emitter Characteristics
Figure 14. Common Emitter Characteristics
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5
Physical Dimensions
D
Figure 15. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type
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6
Physical Dimensions (Continued)
Figure 16. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type
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7
Physical Dimensions (Continued)
0.95
2.92 0.20
3
1.40
+0.20
-0.15
1.30
2.20
1.00
1
2
0.60
0.37
(0.29)
0.95
0.20
A B
1.90
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
(0.93)
0.10
0.00
0.10
C
C
2.40 0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
0.23
0.08
0.25
0.20 MIN
(0.55)
E) DRAWING FILE NAME: MA03DREV10
SEATING
PLANE
SCALE: 2X
Figure 17. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
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8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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