2N4403BU [ONSEMI]
PNP 双极晶体管，TO-92;
| 型号： | 2N4403BU |
| 厂家： | 
ONSEMI |
| 描述： | PNP 双极晶体管，TO-92 开关 晶体管 |
| 文件： | 总12页 (文件大小：395K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
July 2014
2N4403 / MMBT4403
PNP General-Purpose Amplifier
Description
This device is designed for use as a general-purpose
amplifier and switch for collector currents to 500 mA.
C
E
TO-92
EB C
SOT-23
Mark:2T
B
Figure 1. 2N4403 Device Package
Figure 2. MMBT4403 Device Package
Ordering Information
Part Number
2N4403BU
2N4403TF
Marking
2N4403
2N4403
2N4403
2N4403
2N4403
2T
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
SOT-23 3L
Packing Method
Bulk
Tape and Reel
Tape and Reel
Ammo
2N4403TFR
2N4403TA
2N4403TAR
MMBT4403
Ammo
Tape and Reel
© 2001 Fairchild Semiconductor Corporation
2N4403 / MMBT4403 Rev. 1.1.1
www.fairchildsemi.com
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Collector-Emitter Voltage
Value
-40
Unit
V
Collector-Base Voltage
Emitter-Base Voltage
-40
V
-5.0
V
Collector Current - Continuous
-600
mA
°C
TJ, TSTG Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
-55 to +150
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Max.
Symbol
Parameter
Total Device Dissipation
Unit
2N4403(3)
625
MMBT4403(4)
350
2.8
mW
mW/°C
°C/W
PD
Derate Above 25°C
5.0
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
83.3
200
357
°C/W
Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
© 2001 Fairchild Semiconductor Corporation
2N4403 / MMBT4403 Rev. 1.1.1
www.fairchildsemi.com
2
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
Off Characteristics
Collector-Emitter Breakdown
Voltage(5)
V(BR)CEO
V(BR)CBO
IC = -1.0 mA, IB = 0
IC = -0.1 mA, IE = 0
-40
V
V
Collector-Base Breakdown
Voltage
-40
V(BR)EBO Emitter-Base Breakdown Voltage
IE = -0.1 mA, IC = 0
-5.0
V
IBL
Base Cut-Off Current
VCE = -35 V, VEB = -0.4 V
VCE = -35 V, VEB = -0.4 V
-0.1
-0.1
μA
μA
ICEX
Collector Cut-Off Current
On Characteristics
IC = -0.1 mA, VCE = -1.0 V
IC = -1.0 mA, VCE = -1.0 V
IC = -10 mA, VCE = -1.0 V
IC = -150 mA, VCE = -2.0 V(5)
IC = -500 mA, VCE = -2.0 V(5)
IC = -150 mA, IB = -15 mA
IC = -500 mA, IB = -50 mA
IC = -150 mA, IB = -15 mA(5)
IC = -500 mA, IB = -50 mA
30
60
hFE
DC Current Gain
100
100
20
300
-0.40
-0.75
-0.95
-1.30
Collector-Emitter Saturation
Voltage(5)
VCE(sat)
V
V
-0.75
200
VBE(sat) Base-Emitter Saturation Voltage
Small Signal Characteristics
IC = -20 mA, VCE = -10 V,
f = 100 MHz
fT
Current Gain - Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
MHz
pF
VCB = -10 V, IE = 0,
Ccb
Ceb
hie
8.5
30
f = 140 kHz
VBE = -0.5 V, IC = 0,
f = 140 kHz
pF
IC = -1.0 mA, VCE = -10 V,
f = 1.0 kHz
1.5
0.1
60
1
15.0
8.0
kΩ
IC = -1.0 mA, VCE = -10 V,
f = 1.0 kHz
hre
hfe
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
x10-4
IC = -1.0 mA, VCE = -10 V,
f = 1.0 kHz
500
100
IC = -1.0 mA, VCE = -10 V,
f = 1.0 kHz
hoe
μmhos
Switching Characteristics
td
tr
Delay Time
Rise Time
Storage Time
Fall Time
15
20
ns
ns
ns
ns
V
CC = -30 V, IC = -150 mA,
IB1 = -15 mA
ts
tf
225
30
VCC = -30 V, IC = -150 mA,
IB1 = IB2 = -15 mA
Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
© 2001 Fairchild Semiconductor Corporation
2N4403 / MMBT4403 Rev. 1.1.1
www.fairchildsemi.com
3
Typical Performance Characteristics
0.5
0.4
0.3
0.2
0.1
0
500
VCE = 5V
β = 10
400
125 °C
300
25 °C
25 °C
200
125 °C
100
- 40 °C
- 40 °C
0
0.1
0.3
1
3
10
30
100 300
IC - COLLECTOR CURRENT (mA)
1
10
100
500
IC - COLLECTOR CURRENT (mA)
Figure 4. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Typical Pulsed Current Gain vs.
Collector Current
1
1
- 40 °C
- 40 °C
0.8
0.8
25 °C
0.6
25 °C
0.6
125 °C
0.4
0.4
125°C
β = 10
V
= 5V
CE
0.2
0.2
0
0
1
10
100
500
0.1
1
10
25
I C- COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Figure 6. Base-Emitter On Voltage vs.
Collector Current
Figure 5. Base-Emitter Saturation Voltage
vs. Collector Current
100
20
16
12
8
V
= 35V
CB
10
1
C
ib
0.1
C
ob
4
0.01
0
25
50
75
100
°
125
0.1
1
10
50
TA- AMBIE NT TEMP ERATURE ( C)
REVERSE BIAS VOLTAGE (V)
Figure 8. Input and Output Capacitance vs.
Reverse Bias Voltage
Figure 7. Collector Cut-Off Current vs.
Ambient Temperature
© 2001 Fairchild Semiconductor Corporation
2N4403 / MMBT4403 Rev. 1.1.1
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
250
500
400
300
200
100
0
I
c
I
10
c
IB1= IB2
=
IB1= IB2
=
10
200
150
100
50
V
= 15 V
V
= 15 V
cc
cc
t
s
t
f
t
t
r
off
t
on
t
d
0
10
100
- COLLECTOR CURRENT (mA)
1000
10
100
- COLLECTOR CURRENT (mA)
1000
I
I
C
C
Figure 10. Turn-On and Turn-Off Times vs.
Collector Current
Figure 9. Switching Times vs. Collector Current
50
20
1
SOT-223
0.75
TO-92
10
5
t
= 15 V
r
0.5
SOT-23
30 ns
60 ns
0.25
0
2
1
10
100
500
0
25
50
75
100
125
150
I
- COLLECTOR CURRENT (mA)
C
TEMPERATURE (oC)
Figure 12. Power Dissipation vs.
Ambient Temperature
Figure 11. Rise Time vs.
Collector and Turn-On Base Currents
1.3
1.2
1.1
1
5
h
oe
h
h
h
re
ie
fe
h
and h
oe
re
h
2
1
re
h
oe
h
fe
h
0.5
ie
h
ie
0.9
0.8
I
= -10mA
= 25oC
A
V
T
= -10 V
C
T
0.2
CE
A
= 25oC
h
fe
0.1
_
_
_
_
_
_
1
2
5
10
20
50
-4
-8
-12
-16
-20
I C - COLLECTOR CURRENT (mA)
VCE- COLLECTOR VOLTAGE (V)
Figure 14. Common Emitter Characteristics
Figure 13. Common Emitter Characteristics
© 2001 Fairchild Semiconductor Corporation
2N4403 / MMBT4403 Rev. 1.1.1
www.fairchildsemi.com
5
Typical Performance Characteristics (Continued)
1.5
I
V
= -10mA
= -10 V
h
h
h
h
C
CE
fe
ie
re
oe
1.4
1.3
1.2
1.1
1
h
oe
0.9
0.8
0.7
0.6
0.5
h
h
re
ie
h
fe
-40
-20
0
20
40
60
80
100
T A - AMBIENT TEMPERATURE (oC)
Figure 15. Common Emitter Characteristics
© 2001 Fairchild Semiconductor Corporation
2N4403 / MMBT4403 Rev. 1.1.1
www.fairchildsemi.com
6
Physical Dimensions
TO-92 3L (Tape and Reel, Ammo)
Figure 16. 3-LEAD, TO-92, MOLDED 0.200 IN LINE SPACING LD FORM (J61Z OPTION) (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F_BK.pdf.
© 2001 Fairchild Semiconductor Corporation
2N4403 / MMBT4403 Rev. 1.1.1
www.fairchildsemi.com
7
Physical Dimensions (Continued)
TO-92 3L (Bulk)
D
Figure 17. 3-LEAD, JEDEC TO-92 COMPLIANT STRAGHIT LEAD CONFIGURATION (OLD TO92AM3)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf.
© 2001 Fairchild Semiconductor Corporation
2N4403 / MMBT4403 Rev. 1.1.1
www.fairchildsemi.com
8
Physical Dimensions (Continued)
SOT-23 3L
0.95
2.92 0.20
3
1.40
+0.20
1.30
2.20
1.00
-0.15
1
2
0.60
0.37
(0.29)
0.95
0.20
A B
1.90
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
(0.93)
0.10
0.00
0.10
C
C
2.40 0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
0.23
0.08
0.25
0.20 MIN
(0.55)
E) DRAWING FILE NAME: MA03DREV10
SEATING
PLANE
SCALE: 2X
Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf.
© 2001 Fairchild Semiconductor Corporation
2N4403 / MMBT4403 Rev. 1.1.1
www.fairchildsemi.com
9
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPowerA
AX-CAP®*
F-PFSA
®*
FRFET®
®
Global Power ResourceSM
GreenBridgeA
Green FPSA
Green FPSA e-SeriesA
GmaxA
TinyBoost®
TinyBuck®
TinyCalcA
TinyLogic®
TINYOPTOA
TinyPowerA
TinyPWMA
TinyWireA
TranSiCA
PowerTrench®
PowerXS™
Programmable Active DroopA
QFET®
BitSiCA
Build it NowA
CorePLUSA
CorePOWERA
CROSSVOLTA
CTLA
QSA
GTOA
IntelliMAXA
Quiet SeriesA
RapidConfigureA
A
Current Transfer LogicA
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMaxA
ISOPLANARA
Making Small Speakers Sound Louder
and Better™
Saving our world, 1mW/W/kW at a time™
SignalWiseA
SmartMaxA
TriFault DetectA
TRUECURRENT®*
ꢀSerDesA
MegaBuckA
ESBCA
MICROCOUPLERA
MicroFETA
SMART STARTA
Solutions for Your SuccessA
SPM®
®
MicroPakA
Fairchild®
UHC®
MicroPak2A
Fairchild Semiconductor®
FACT Quiet SeriesA
FACT®
STEALTHA
MillerDriveA
Ultra FRFETA
UniFETA
VCXA
VisualMaxA
VoltagePlusA
XS™
SuperFET®
MotionMaxA
mWSaver®
SuperSOTA-3
FAST®
SuperSOTA-6
SuperSOTA-8
SupreMOS®
OptoHiTA
FastvCoreA
FETBenchA
FPSA
OPTOLOGIC®
OPTOPLANAR®
SyncFETA
Sync-Lock™
❺™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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accordance with instructions for use provided in the labeling, can be
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Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
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The datasheet is for reference information only.
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No Identification Needed
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First Production
Full Production
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Rev. I68
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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DIODES
2N4403L
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 STYLE, E-LINE PACKAGE-3
DIODES
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