2N5210TFR [ONSEMI]
Amplifier Transistors;型号: | 2N5210TFR |
厂家: | ONSEMI |
描述: | Amplifier Transistors 放大器 晶体管 |
文件: | 总9页 (文件大小:209K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2N5210/MMBT5210
NPN General Purpose Amplifier
C
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
E
C
TO-92
B
E
B
SOT-23
Mark: 3M
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
50
50
V
V
4.5
100
V
Collector Current - Continuous
mA
Operating and Storage Junction Temperature Range
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Max.
Symbol
Characteristic
Units
2N5210
MMBT5210
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
350
2.8
mW
mW/°C
°C/W
RθJC
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
2002 Fairchild Semiconductor Corporation
2N5210, Rev B
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
ICBO
Collector-Emitter Breakdown Voltage
IC = 1.0 mA, IB = 0
IC = 0.1 mA, IE = 0
VCB = 35 V, IE = 0
VEB = 3.0 V, IC = 0
50
50
V
V
Collector-Base Breakdown Voltage
Collector Cutoff Current
50
50
nA
nA
IEBO
Emitter Cutoff Current
ON CHARACTERISTICS
hFE
DC Current Gain
200
250
250
600
I = 100 A, VCE = 5.0 V
µ
C
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V*
IC = 10 mA, IB = 1.0 mA
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.7
V
V
VCE(sat)
VBE(on)
IC = 1.0 mA, VCE = 5.0 V
0.85
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
30
MHz
pF
IC = 500 A,V = 5.0 V,
f= 20 MHz
VCB = 5.0 V, IE = 0, f = 100 kHz
µ
CE
Collector-Base Capacitance
Small-Signal Current Gain
4.0
Ccb
hfe
IC = 1.0 mA, VCE = 5.0 V,
f = 1.0 kHz
250
900
NF
Noise Figure
2.0
3.0
dB
dB
I = 20 A, VCE = 5.0 V,
µ
C
R = 22 k , f = 10 Hz to 15.7 kHz
Ω
S
3
I = 20 A, VCE = 5.0 V,
µ
C
R = 10 k , f = 1.0 kHz
Ω
S
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NPN General Purpose Amplifier
(continued)
Typical Characteristics
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
1200
0.30
0.25
0.20
0.15
0.10
0.05
125 oC
VCE = 5.0V
1000
800
600
400
200
0
β = 10
125 oC
25 oC
25 oC
- 40 oC
- 40 oC
0.3
3
0.1
1
10
100
0.01
0.03
0.1
1
10
30
100
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
- 40 oC
- 40 oC
25 oC
25 oC
125 oC
125 oC
β = 10
VCE = 5.0V
0.1
1
10
100
0.1
1
10
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
10
VCB = 45V
1
0.1
25
50
75
100
125
150
T - AMBIE NT TEMP ERATURE ( C)
°
A
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Input and Output Capacitance
vs Reverse Bias Voltage
Contours of Constant Gain
Bandwidth Product (fT )
5
10
7
f = 1.0 MHz
175 MHz
4
3
5
C
te
150 MHz
3
2
2
125 MHz
100 MHz
75 MHz
C
1
0
ob
1
0.1
1
10
100
0
4
8
12
16
20
I C - COLLECTOR CURRENT (mA)
REVERSE BIAS VOLTAGE (V)
Normalized Collector-Cutoff Current
vs Ambient Temperature
Wideband Noise Frequency
vs Source Resistance
1000
5
VCE = 5.0 V
BANDWIDTH = 15.7 kHz
4
3
2
1
0
100
10
1
I
= 100 µA
C
3
I
= 30 µA
C
I
= 10 µA
C
25
50
75
100
125
150
1,000
2,000
5,000
10,000
20,000
50,000
100,000
TA - AMBIENT TEMPERATURE ( C)
°
R
- SOURCE RESISTANCE (Ω )
S
Noise Figure vs Frequency
Base-Emitter Saturation
10
8
Voltage vs Collector Current
I
R
= 200 µA,
= 10 kΩ
C
1.00
0.75
0.50
0.25
0.00
S
I
R
= 100 µA,
C
= 10 kΩ
S
6
TO-92
I
R
= 1.0 mA,
= 500 Ω
C
S
4
I
R
= 1.0 mA,
= 5.0 kΩ
C
SOT-23
S
2
V
= 5.0V
CE
0
0.0001 0.001
0.01
0.1
1
10
100
0
25
50
75
100
125
150
f - FREQUENCY (MHz)
TEMPERATURE (oC)
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Contours of Constant
Contours of Constant
Narrow Band Noise Figure
Narrow Band Noise Figure
10,000
10,000
3.0 d
B
5,000
5,000
4.0 d
B
2.0 d
B
2,000
1,000
500
2,000
1,000
500
3.0 d
B
6.0 d
B
4.0 d
B
8.0 d
B
V CE = 5.0 V
V CE = 5.0 V
f = 1.0 kHz
BANDWIDTH
= 200 Hz
6.0 d
B
10 d
B
f = 100 Hz
BANDWIDTH
= 20 Hz
8.0 d
B
200
100
200
100
12 d
B
14 d
B
1
10
100
1,000
1
10
100
1,000
I
- COLLECTOR CURRENT ( µ A)
C
I
- COLLECTOR CURRENT ( µ A)
C
Contours of Constant
Contours of Constant
Narrow Band Noise Figure
Narrow Band Noise Figure
10000
5000
10000
5000
1.0 d
B
2.0 d
B
2000
1000
500
2.0 d
B
2000
1000
500
3.0 d
B
3.0 d
B
4.0 d
B
VCE
5.0V
f = 1.0 MHz
BANDWIDTH
= 200kHz
=
4.
0 dB
5.0
dB
6.0
VCE = 5.0V
f = 10kHz
BANDWIDTH
= 2.0kHz
6.0 d
B
200
100
200
100
dB
7.0 d
8.0 d
B
B
8.0 d
B
1
10
100
1000
0.01
0.1
1
10
µ
I C - COLLECTOR CURRENT ( A)
µ
I C - COLLECTOR CURRENT ( A)
NPN General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics (f = 1.0 kHz)
Typical Common Emitter Characteristics
1.4
Typical Common Emitter Characteristics
1.5
h
fe
1.4
h ie
VCE = 5.0V
f = 1.0kHz
1.3
h re
h fe
h oe
1.3
h
ie
I C = 1.0mA
1.2
1.1
1
h
oe
1.2
1.1
1
h
h
re
oe
0.9
0.8
0.7
0.6
0.5
h
h
re
ie
h oe
h fe
h re
IC = 1.0mA
f = 1.0kHz
TA = 25 C
0.9
0.8
h ie
h
fe
°
-100
-50
0
50
100
150
0
5
10
15
20
25
T J - JUNCTIO N TEMP ERATURE ( C)
V CE - COLLECTOR VOLTAGE (V)
°
Typical Common Emitter Characteristics
100
f = 1.0kHz
h
oe
10
1
h
and h
re
ie
h
re
h
3
oe
h
fe
h
fe
h
ie
0.1
0.01
0.1 0.2
0.5
1
2
5
10 20
50 100
I C - COLLECTOR CURRENT (mA)
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Definition of Terms
Datasheet Identification
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Advance Information
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In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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