2N5551RL1 [ONSEMI]
Amplifier Transistors; 放大器晶体管
| 型号： | 2N5551RL1 |
| 厂家： | 
ONSEMI |
| 描述： | Amplifier Transistors |
| 文件： | 总6页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
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• Device Marking: Device Type, e.g., 2N5550, Date Code
COLLECTOR
3
2
BASE
MAXIMUM RATINGS
Rating
Symbol 2N5550 2N5551
Unit
Vdc
1
EMITTER
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation
V
CEO
V
CBO
140
160
160
180
Vdc
V
EBO
6.0
Vdc
MARKING
DIAGRAM
I
C
600
mAdc
P
D
D
@ T = 25°C
Derate above 25°C
625
5.0
mW
mW/°C
A
2N
55xx
YWW
TO−92
CASE 29
STYLE 1
Total Device Dissipation
@ T = 25°C
Derate above 25°C
P
1
2
1.5
12
W
mW/°C
C
3
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
55xx
Y
WW
Specific Device Code
= Year
= Work Week
Maximumratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
ORDERING INFORMATION
THERMAL CHARACTERISTICS
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
R
q
JA
200
°C/W
Preferred devices are recommended choices for future use
and best overall value.
Thermal Resistance,
Junction−to−Case
R
q
JC
83.3
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
downloadthe ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
June, 2004 − Rev. 3
2N5550/D
2N5550, 2N5551
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 1.0 mAdc, I = 0)
2N5550
2N5551
140
160
−
−
C
B
Collector−Base Breakdown Voltage
(I = 100 mAdc, I = 0 )
V
V
Vdc
Vdc
2N5550
2N5551
160
180
−
−
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
6.0
−
E
C
Collector Cutoff Current
(V = 100 Vdc, I = 0)
I
CBO
2N5550
2N5551
2N5550
2N5551
−
−
−
−
100
50
100
50
nAdc
CB
E
(V = 120 Vdc, I = 0)
CB
E
(V = 100 Vdc, I = 0, T = 100°C)
mAdc
CB
E
A
(V = 120 Vdc, I = 0, T = 100°C)
CB
E
A
Emitter Cutoff Current
(V = 4.0 Vdc, I = 0)
I
−
50
nAdc
−
EBO
EB
C
ON CHARACTERISTICS (Note 1)
DC Current Gain
h
FE
(I = 1.0 mAdc, V = 5.0 Vdc)
2N5550
2N5551
60
80
−
−
C
CE
(I = 10 mAdc, V = 5.0 Vdc)
2N5550
2N5551
60
80
250
250
C
CE
(I = 50 mAdc, V = 5.0 Vdc)
2N5550
2N5551
20
30
−
−
C
CE
Collector−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
Both Types
−
0.15
C
B
(I = 50 mAdc, I = 5.0 mAdc)
2N5550
2N5551
−
−
0.25
0.20
C
B
Base−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
Both Types
−
1.0
C
B
(I = 50 mAdc, I = 5.0 mAdc)
2N5550
2N5551
−
−
1.2
1.0
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
f
100
−
300
6.0
MHz
pF
T
(I = 10 mAdc, V = 10 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
obo
(V = 10 Vdc, I = 0, f = 1.0 MHz)
CB
E
Input Capacitance
C
ibo
pF
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
2N5550
2N5551
−
−
30
20
EB
C
Small−Signal Current Gain
h
fe
50
200
−
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
C
CE
Noise Figure
NF
dB
(I = 250 mAdc, V = 5.0 Vdc, R = 1.0 kW,
f = 1.0 kHz)
2N5550
2N5551
−
−
10
8.0
C
CE
S
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
−
2N5550, 2N5551
ORDERING INFORMATION
Device
†
Package
TO−92
TO−92
TO−92
Shipping
2N5550
5,000 Unit / Bulk
2,000 Tape & Reel
2N5550RLRA
2N5550RLRP
2N5550RLRPG
2,000 Tape & Ammo Box
2,000 Tape & Ammo Box
TO−92
(Pb−Free)
2N5551
TO−92
5,000 Unit / Bulk
5,000 Unit / Bulk
2N5551G
TO−92
(Pb−Free)
2N5551RL1
TO−92
TO−92
TO−92
TO−92
TO−92
2,000 Tape & Reel
2,000 Tape & Reel
2N5551RLRA
2N5551RLRM
2N5551RLRP
2N55551ZL1
2,000 Tape & Ammo Box
2,000 Tape & Ammo Box
2,000 Tape & Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifica-
tions Brochure, BRD8011/D.
500
300
200
V
V
= 1.0 V
= 5.0 V
CE
T = 125°C
J
CE
25°C
55°C
100
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
3.0
2.0
5.0
7.0
10
20
30
50
70
100
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
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3
2N5550, 2N5551
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
= 1.0 mA
10 mA
100 mA
C
30 mA
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I , BASE CURRENT (mA)
B
Figure 2. Collector Saturation Region
1
10
V
CE
= 30 V
0
10
T = 125°C
J
−1
10
I
= I
CES
C
−2
10
75°C
REVERSE
25°C
−3
FORWARD
10
−4
10
−5
10
0.4 0.3 0.2 0.1
0
0.1 0.2
0.3 0.4 0.5 0.6
V
BE
, BASE−EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut−Off Region
1.0
2.5
2.0
T = 25°C
J
T = −55°C to +135°C
J
1.5
0.8
0.6
0.4
0.2
0
1.0
0.5
0
V
@ I /I = 10
C B
BE(sat)
q
for V
CE(sat)
VC
−0.5
−1.0
−1.5
−2.0
−2.5
q
for V
BE(sat)
VB
V
@ I /I = 10
C B
CE(sat)
0.1 0.2 0.3 0.5
1.0 2.0 3.0 5.0
10 20 30 50 100
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10 20 30 50 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 4. “On” Voltages
Figure 5. Temperature Coefficients
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4
2N5550, 2N5551
100
70
50
T = 25°C
J
30
20
V
V
CC
30 V
BB
−ꢀ8.8 V
10.2 V
V
in
100
3.0 k
R
10
C
C
ibo
0.25 mF
7.0
5.0
10 ms
INPUT PULSE
R
B
V
out
5.1 k
100
C
3.0
2.0
obo
t , t ≤ 10 ns
DUTY CYCLE = 1.0%
1N914
r
f
V
in
1.0
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
Values Shown are for I @ 10 mA
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 6. Switching Time Test Circuit
Figure 7. Capacitances
1000
500
5000
I /I = 10
B
I /I = 10
C B
t @ V = 120 V
CC
C
f
3000
2000
T = 25°C
J
T = 25°C
J
t @ V = 120 V
CC
t @ V = 30 V
f CC
r
300
200
1000
500
t @ V = 30 V
CC
r
100
50
300
200
t @ V = 120 V
CC
s
t @ V
d
= 1.0 V
EB(off)
30
20
V
CC
= 120 V
100
50
10
0.2 0.3 0.5 1.0
2.0 3.0 5.0
10
20 30 50 100 200
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10
20 30 50
100 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 8. Turn−On Time
Figure 9. Turn−Off Time
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5
2N5550, 2N5551
PACKAGE DIMENSIONS
TO−92
TO−226AA
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
−−−
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
−−−
0.205
0.210
0.165
0.021
0.055
0.105
0.020
−−−
D
X X
G
J
H
V
K
L
−−−
−−−
C
N
P
R
V
0.105
0.100
−−−
2.66
2.54
−−−
SECTION X−X
0.115
0.135
2.93
3.43
1
N
−−−
−−−
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
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For additional information, please contact your
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2N5550/D
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