2N5639RLRAG [ONSEMI]

JFET 斩波器晶体管;
2N5639RLRAG
型号: 2N5639RLRAG
厂家: ONSEMI    ONSEMI
描述:

JFET 斩波器晶体管

斩波器 开关 小信号场效应晶体管
文件: 总3页 (文件大小:52K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2N5638, 2N5639  
2N5638 is a Preferred Device  
JFET Chopper Transistors  
N−Channel − Depletion  
N−Channel Junction Field Effect Transistors, depletion mode  
(Type A) designed for chopper and high−speed switching applications.  
Features  
http://onsemi.com  
Low Drain−Source “ON” Resistance: RDS(on) = 30W for 2N5638  
RDS(on) = 60W for 2N5639  
1 DRAIN  
Low Reverse Transfer Capacitance −  
C
rss  
= 4.0 pF (Max) @ f = 1.0 MHz  
3
Fast Switching Characteristics − t = 5.0 ns (Max) (2N5638)  
r
GATE  
Pb−Free Packages are Available*  
MAXIMUM RATINGS  
2 SOURCE  
Rating  
DrainSource Voltage  
DrainGate Voltage  
Symbol  
Value  
30  
Unit  
Vdc  
V
DS  
DG  
MARKING  
DIAGRAM  
V
30  
Vdc  
Reverse GateSource Voltage  
Forward Gate Current  
Total Device Dissipation  
V
30  
Vdc  
GSR  
I
10  
mAdc  
GF  
2N  
563x  
AYWW G  
G
P
D
TO−92  
CASE 29  
STYLE 5  
@ T = 25°C  
310  
2.82  
mW  
mW/°C  
A
Derate above 25°C  
Storage Temperature Range  
Operating Junction Temp Range  
T
65 to +150  
65 to +135  
°C  
°C  
stg  
T
J
1
2
3
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
x = 8 or 9  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
V
DD  
= 10 Vdc  
G
= Pb−Free Package  
V
I
DD  
D
(
)
) 50  
DS(on)  
(Note: Microdot may be in either location)  
R
+
* R  
L
0.1 mF  
50  
TO  
50 W  
SCOPE B  
ORDERING INFORMATION  
PULSE  
GENERATOR  
+
R
Device  
Package  
Shipping  
L
0.001 mF  
INPUT  
2N5638RLRA  
TO−92  
2000/Tape & Reel  
2000/Tape & Reel  
(SCOPE A)  
10%  
90%  
V
V
GS(on)  
2N5638RLRAG  
TO−92  
(Pb−Free)  
50 W  
GS(off)  
2N5639  
TO−92  
1000 Units/Box  
1000 Units/Box  
t
d(on)  
2N5639G  
TO−92  
(Pb−Free)  
1.0 k  
50  
TO  
50 W  
SCOPE A  
t
f
t
r
t
d(off)  
90%  
10%  
2N5369RLRA  
TO−92  
2000/Tape & Reel  
2000/Tape & Reel  
2N5369RLRAG  
TO−92  
(Pb−Free)  
OUTPUT  
(SCOPE B)  
50  
SCOPE  
TEKTRONIX 567A  
OR EQUIVALENT  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Figure 1. Switching Times Test Circuit  
Preferred devices are recommended choices for future use  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
and best overall value.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 4  
2N5638/D  
 
2N5638, 2N5639  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
GateSource Breakdown Voltage  
V
35  
Vdc  
(BR)GSS  
(I = −1.0 mAdc, V = 0)  
G
DS  
Gate Reverse Current  
(V = −15 Vdc, V = 0)  
I
1.0  
1.0  
nAdc  
mAdc  
GSS  
GS  
DS  
(V = −15 Vdc, V = 0, T = 100°C)  
GS  
DS  
A
Drain−Cutoff Current  
I
mAdc  
D(off)  
(V = 15 Vdc, V = −12 Vdc)  
2N5638  
2N5638  
2N5639  
2N5639  
1.0  
1.0  
1.0  
1.0  
DS  
GS  
(V = 15 Vdc, V = −12 Vdc, T = 100°C)  
DS  
GS  
A
(V = 15 Vdc, V = −8.0 Vdc)  
DS  
GS  
(V = 15 Vdc, V = −8.0 Vdc, T = 100°C)  
DS  
GS  
A
ON CHARACTERISTICS  
Zero−Gate−Voltage Drain Current (Note 1)  
2N5638  
2N5639  
I
50  
25  
mAdc  
Vdc  
DSS  
(V = 20 Vdc, V = 0)  
DS  
GS  
Drain−Source “ON” Voltage  
(I = 12 mAdc, V = 0)  
V
DS(on)  
DS(on)  
2N5638  
2N5639  
0.5  
0.5  
D
GS  
(I = 6.0 mAdc, V = 0)  
D
GS  
Static Drain−Source “ON” Resistance  
(I = 1.0 mAdc, V = 0)  
R
W
W
2N5638  
2N5639  
30  
60  
D
GS  
SMALL−SIGNAL CHARACTERISTICS  
Static Drain−Source “ON” Resistance  
R
DS(on)  
(V = 0, I = 0, f = 1.0 kHz)  
2N5638  
2N5639  
30  
60  
GS  
D
Input Capacitance  
(V = 0, V = −12 Vdc, f = 1.0 MHz)  
C
10  
pF  
pF  
iss  
DS  
GS  
Reverse Transfer Capacitance  
(V = 0, V = −12 Vdc, f = 1.0 MHz)  
C
4.0  
rss  
DS  
GS  
SWITCHING CHARACTERISTICS (V = 10 Vdc, V  
= 0, V = −10 Vdc, R = 50 W. See Figure 1 on page 1)  
GS(off) G’  
DD  
GS(on)  
Turn−On Delay Time  
I
= 12 mAdc, 2N5638  
= 6.0 mAdc, 2N5639  
t
4.0  
6.0  
ns  
ns  
ns  
ns  
D(on)  
d(on)  
I
I
I
I
D(on)  
Rise Time  
I
= 12 mAdc, 2N5638  
= 6.0 mAdc, 2N5639  
t
r
5.0  
8.0  
D(on)  
D(on)  
Turn−Off Delay Time  
I
= 12 mAdc, 2N5638  
= 6.0 mAdc, 2N5639  
t
5.0  
10  
D(on)  
D(on)  
d(off)  
Fall Time  
I
= 12 mAdc, 2N5638  
= 6.0 mAdc, 2N5639  
t
f
10  
20  
D(on)  
D(on)  
1. Pulse Width 300 ms, Duty Cycle 3.0%.  
http://onsemi.com  
2
 
2N5638, 2N5639  
PACKAGE DIMENSIONS  
TO−92 (TO−226)  
CASE 29−11  
ISSUE AL  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
A
B
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND  
BEYOND DIMENSION K MINIMUM.  
P
L
SEATING  
PLANE  
INCHES  
DIM MIN MAX  
MILLIMETERS  
K
MIN  
4.45  
4.32  
3.18  
0.407  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
−−−  
MAX  
5.20  
5.33  
4.19  
0.533  
1.39  
2.66  
0.50  
−−−  
A
B
C
D
G
H
J
0.175  
0.170  
0.125  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
−−−  
0.205  
0.210  
0.165  
0.021  
0.055  
0.105  
0.020  
−−−  
D
X X  
G
J
H
V
K
L
−−−  
−−−  
C
N
P
R
V
0.105  
0.100  
−−−  
2.66  
2.54  
−−−  
SECTION X−X  
0.115  
0.135  
2.93  
3.43  
1
N
−−−  
−−−  
N
STYLE 5:  
PIN 1. DRAIN  
2. SOURCE  
3. GATE  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
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USA/Canada  
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Order Literature: http://www.onsemi.com/litorder  
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For additional information, please contact your  
local Sales Representative.  
2N5638/D  

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