2N6031G [ONSEMI]
高电压大功率晶体管;
| 型号： | 2N6031G |
| 厂家： | 
ONSEMI |
| 描述： | 高电压大功率晶体管 局域网 开关 晶体管 |
| 文件： | 总6页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
2N5631
High−Voltage − High Power
Transistors
High−voltage − high power transistors designed for use in high
power audio amplifier applications and high voltage switching
regulator circuits.
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• High Collector Emitter Sustaining Voltage −
V
= 140 Vdc
CEO(sus)
16 AMPERE
• High DC Current Gain − @ I = 8.0 Adc
C
h
= 15 (Min)
POWER TRANSISTORS
COMPLEMENTARY SILICON
140 VOLTS, 200 WATTS
FE
• Low Collector−Emitter Saturation Voltage −
= 1.0 Vdc (Max) @ I = 10 Adc
V
CE(sat)
C
MAXIMUM RATINGS (1)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
140
140
7.0
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
V
CB
V
EB
Collector Current − Continuous
I
C
16
20
CASE 1−07
TO−204AA
(TO−3)
Peak
Base Current − Continuous
I
B
5.0
Adc
Total Device Dissipation @ T = 25_C
P
200
1.14
W
C
D
Derate above 25_C
W/_C
Operating and Storage Junction
Temperature Range
T , T
J
–65 to +200
_C
stg
THERMAL CHARACTERISTICS (1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
(1) Indicates JEDEC Registered Data.
200
θ
JC
0.875
_C/W
150
100
50
0
0
20
40
60
80
100 120 140 160 180 200
T , TEMPERATURE (°C)
C
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
August, 2006 − Rev. 2
2N5631/D
2N5631
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (2)
V
Vdc
CEO(sus)
(I = 200 mAdc, I = 0)
C
B
140
−
Collector−Emitter Cutoff Current
(V = 70 Vdc, I = 0)
I
mAdc
CEO
CE
B
2.0
−
Collector−Emitter Cutoff Current
I
mAdc
CEX
(V = Rated V , V
= 1.5 Vdc)
= 1.5 Vdc, T = 150_C)
CE
CB
EB(off)
EB(off)
−
−
2.0
7.0
(V = Rated V , V
CE
CB
C
Collector−Base Cutoff Current
(V = Rated V , I = 0)
I
−
2.0
mAdc
mAdc
CBO
CB
CB
E
Emitter−Base Cutoff Current
(V = 7.0 Vdc, I = 0)
I
EBO
−
5.0
BE
C
ON CHARACTERISTICS (2)
DC Current Gain
h
FE
−
(I = 8 Adc, V = 2.0 Vdc)
15
60
C
CE
(I = 16 Adc, V = 2.0 Vdc)
4.0
−
C
CE
Collector−Emitter Saturation Voltage
(I = 10 Adc, I = 1.0 Adc)
V
V
Vdc
CE(sat)
BE(sat)
C
B
−
−
1.0
2.0
(I = 16 Adc, I = 4.0 Adc)
C
B
Base−Emitter Saturation Voltage
(I = 10 Adc, I = 1.0 Adc)
−
1.8
Vdc
Vdc
C
B
Base−Emitter On Voltage
(I = 8.0 Adc, V = 2.0 Vdc)
V
−
1.5
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (3)
f
1.0
−
MHz
pF
−
T
(I = 1.0 Adc, V = 20 Vdc, f = 0.5 MHz)
C
CE
test
Output Capacitance
(V = 10 Vdc, I = 0, f = 0.1 MHz)
2N5631
2N6031
C
−
−
500
1000
ob
CB
E
Small−Signal Current Gain
(I = 4.0 Adc, V = 10 Vdc, f = 1.0 kHz)
h
15
−
fe
C
CE
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width v300 μs, Duty Cycle w 2.0%.
(2) f = |h | • f
T
fe
test
V
CC
+ꢀ30 V
3.0
2.0
T = 25°C
J
I /I = 10
C B
V
CE
= 30 V
25 μs
1.0
0.7
0.5
R
C
+11 V
0
SCOPE
t
r
R
B
0.3
0.2
−9.0 V
D
1
51
t , t ≤ 10 ns
t @ V
d
= 5.0 V
r
f
DUTY CYCLE = 1.0%
BE(off)
0.1
−4 V
0.07
0.05
R
B
and R VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
2N5631
2N6031
D MUST BE FAST RECOVERY TYPE, e.g.:
1
ꢁ1N5825 USED ABOVE I ≈ 100 mA
B
0.03
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
ꢁMSD6100 USED BELOW I ≈ 100 mA
B
I , COLLECTOR CURRENT (AMP)
C
For PNP test circuit, reverse all polarities and D1.
Figure 2. Switching Times Test Circuit
Figure 3. Turn−On Time
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2
2N5631
1.0
0.5
D = 0.5
0.2
0.1
0.2
0.1
P
(pk)
θ
(t) = r(t) θ
JC
JC
0.05
θ
= 0.875°C/W MAX
D CURVES APPLY FOR POWER
JC
0.05
PULSE TRAIN SHOWN
READ TIME AT t
t
1
0.02
1
t
2
0.01
T
− T = P θ (t)
C (pk) JC
SINGLE PULSE
0.05
J(pk)
DUTY CYCLE, D = t /t
0.02
0.01
1 2
0.02
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1000 2000
t, TIME (ms)
Figure 4. Thermal Response
20
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
1.0ꢂms
5.0ꢂms
10
breakdown. Safe operating area curves indicate I − V
C
CE
dc
7.0
5.0
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
0.5ꢂms
50ꢂms
T = 200°C
3.0
2.0
J
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
The data of Figure 5 is based on T
variable depending on conditions. Second breakdown pulse
= 200_C; T is
J(pk)
C
THERMALLY LIMITED @ T = 25°C
C
1.0
limits are valid for duty cycles to 10% provided T
J(pk)
0.7
0.5
v 200_C. T
may be calculated from the data in
CURVES APPLY BELOW
RATED V
J(pk)
CEO
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.3
0.2
2N5631, 2N6031
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Active−Region Safe Operating Area
NPN
PNP
2N5631
2N6031
5.0
4.0
T = 25°C
J
T = 25°C
J
I /I = 10
3.0
I
= I
B1 B2
I /I = 10
C B
t
s
3.0
2.0
t
s
C B
I = I
B1 B2
2.0
V
CE
= 30 V
V
CE
= 30 V
1.0
0.6
1.0
0.7
0.4
0.3
t
f
t
f
0.5
0.2 0.3
0.2
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 6. Turn−Off Time
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3
2N5631
NPN
PNP
2N5631
2N6031
1000
700
2000
T = 25°C
J
T = 25°C
J
500
1000
700
C
ib
300
200
500
C
ib
300
200
C
ob
C
ob
100
0.2
0.5
1.0 2.0
5.0
10
20
50 100 200
0.2
0.5 1.0
2.0
5.0 10
20
50
100 200
V , REVERSE VOLTAGE (VOLTS)
R
V , REVERSE VOLTAGE (VOLTS)
R
Figure 7. Capacitance
500
500
T = +150°C
J
T = 150°C
J
300
300
200
V
V
= 2.0 V
= 10 V
V
V
= 2.0 V
= 10 V
CE
CE
200
CE
CE
+ꢀ25°C
−ꢀ55°C
25°C
100
70
100
70
−ꢀ55°C
50
50
30
20
30
20
10
7.0
5.0
10
7.0
5.0
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0
10
20
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0
10
20
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 8. DC Current Gain
2.0
1.6
1.2
0.8
0.4
0
2.0
T = 25°C
T = 25°C
J
J
1.6
1.2
0.8
0.4
0
I
= 4.0 A
8.0 A
16 A
I
C
= 4.0 A
8.0 A
16 A
C
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0
I , BASE CURRENT (AMP)
B
I , BASE CURRENT (AMP)
B
Figure 9. Collector Saturation Region
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4
2N5631
PACKAGE DIMENSIONS
CASE 1−07
TO−204AA (TO−3)
ISSUE Z
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
C
SEATING
PLANE
−T−
E
K
D 2 PL
INCHES
DIM MIN MAX
1.550 REF
MILLIMETERS
M
M
M
Y
0.13 (0.005)
T
Q
MIN
MAX
A
B
C
D
E
G
H
K
L
39.37 REF
U
−−−
0.250
0.038
0.055
1.050
−−−
6.35
0.97
1.40
26.67
8.51
1.09
1.77
−Y−
L
V
H
0.335
0.043
0.070
2
1
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
B
G
11.18
12.19
16.89 BSC
N
Q
U
V
−−−
0.151
1.187 BSC
0.830
−−−
3.84
30.15 BSC
21.08
4.19
−Q−
0.13 (0.005)
0.165
0.188
M
M
Y
T
0.131
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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2N5631/D
相关型号：
2N6032E3
Power Bipolar Transistor, 50A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
MICROSEMI
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