2N6283 [ONSEMI]
Darlington Complementary Silicon Power Transistors; 达林顿互补硅功率晶体管
| 型号： | 2N6283 |
| 厂家： | 
ONSEMI |
| 描述： | Darlington Complementary Silicon Power Transistors |
| 文件： | 总8页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
NPN
2N6283
Darlington Complementary
Silicon Power Transistors
2N6284
PNP
. . . designed for general–purpose amplifier and low–frequency
switching applications.
2N6286
2N6287
• High DC Current Gain @ I = 10 Adc –
C
h
FE
= 2400 (Typ) – 2N6284
= 4000 (Typ) – 2N6287
• Collector–Emitter Sustaining Voltage –
= 100 Vdc (Min)
V
CEO(sus)
DARLINGTON
20 AMPERE
COMPLEMENTARY
SILICON
• Monolithic Construction with Built–In Base–Emitter Shunt
Resistors
POWER TRANSISTORS
100 VOLTS
*MAXIMUM RATINGS
Symbo
l
2N6284
2N6287
2N6283
2N6286
160 WATTS
Rating
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
80
80
100
100
V
CB
V
EB
5.0
Collector Current – Continuous
Peak
I
C
20
40
Base Current
I
0.5
Adc
B
CASE 1–07
TO–204AA
(TO–3)
Total Device Dissipation @ T
25_C
=
P
160
0.915
Watts
W/_C
C
D
Derate above 25_C
Operating and Storage Junction
Temperature Range
T ,T
–65 to +200
_C
J
stg
*THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
1.09
Unit
Thermal Resistance, Junction to Case
*Indicates JEDEC Registered Data.
R
_C/W
θ
JC
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
200
T , CASE TEMPERATURE (°C)
C
Figure 1. Power Derating
1
Semiconductor Components Industries, LLC, 2001
Publication Order Number:
May, 2001 – Rev. 1
2N6284/D
2N6283 2N6284 2N6286 2N6287
*ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(I = 0.1 Adc, I = 0)
V
Vdc
CEO(sus)
2N6283, 2N6286
2N6284, 2N6287
C
B
80
100
–
–
Collector Cutoff Current
(V = 40 Vdc, I = 0)
I
mAdc
mAdc
CEO
–
–
1.0
1.0
CE
B
(V = 50 Vdc, I = 0)
CE
B
Collector Cutoff Current
(V = Rated V , V
I
CEX
= 1.5 Vdc)
= 1.5 Vdc, T = 150_C)
CE
CB
BE(off)
BE(off)
–
–
0.5
5.0
(V = Rated V , V
CE
CB
C
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
I
–
2.0
mAdc
EBO
BE
C
ON CHARACTERISTICS (1)
DC Current Gain
h
FE
–
(I = 10 Adc, V = 3.0 Vdc)
C
CE
750
100
18,000
–
(I = 20 Adc, V = 3.0 Vdc)
C
CE
Collector–Emitter Saturation Voltage
(I = 10 Adc, I = 40 mAdc)
V
Vdc
CE(sat)
C
B
–
–
2.0
3.0
(I = 20 Adc, I = 200 mAdc)
C
B
Base–Emitter On Voltage
(I = 10 Adc, V = 3.0 Vdc)
V
–
2.8
Vdc
Vdc
BE(on)
C
CE
Base–Emitter Saturation Voltage
(I = 20 Adc, I = 200 mAdc)
V
–
4.0
BE(sat)
C
B
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small–Signal Short–Circuit
Forward Current Transfer Ratio
|h |
4.0
–
MHz
pF
fe
(I = 10 Adc, V = 3.0 Vdc, f = 1.0 MHz)
C
CE
Output Capacitance
(V = 10 Vdc, I = 0, f = 0.1 MHz)
C
ob
fe
2N6283, 2N6284
2N6286, 2N6287
CB
E
–
–
400
600
Small–Signal Current Gain
(I = 10 Adc, V = 3.0 Vdc, f = 1.0 kHz)
h
300
–
–
C
CE
*Indicates JEDEC Registered Data.
(1) Pulse test: Pulse Width = 300 µs, Duty Cycle = 2%
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2
2N6283 2N6284 2N6286 2N6287
10
t
s
2N6284 (NPN)
2N6287 (PNP)
V
CC
- 30 V
7.0
5.0
R
B
& R VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
D MUST BE FAST RECOVERY TYPE e.g.,
1
3.0
2.0
ą1N5825 USED ABOVE I [ 100 mA
B
R
C
SCOPE
ąMSD6100 USED BELOW I [ 100 mA
B
TUT
t
f
t
r
R
B
V
2
1.0
0.7
0.5
APPROX
+ 8.0 V
D
51
1
[ 8.0 k
[ 50
0
V
CC
I /I = 250
= 30 Vdc
0.3
0.2
V
1
+ 4.0 V
C B
I = I
B1 B2
APPROX
- 12 V
FOR t AND t , D IS DISCONNECTED
1
d
AND V = 0
r
25 µs
t @ V
d
= 0 V
BE(off)
T = 25°C
J
2
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES
0.1
0.2 0.3
t , t v 10 ns
r
f
DUTY CYCLE = 1.0%
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
I , COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Times Test Circuit
Figure 3. Switching Times
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
P
(pk)
R
(t) = r(t) R
θ
JC
= 1.09°C/W MAX
0.1
0.07
0.05
θ
JC
JC
0.05
0.02
R
θ
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
0.03
0.02
t
0.01
SINGLE PULSE
0.02 0.03 0.05 0.1
2
1
T
- T = P
C
R (t)
θ
JC
J(pk)
(pk)
DUTY CYCLE, D = t /t
1 2
0.01
0.01
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
200 300 500
1000
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
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2N6283 2N6284 2N6286 2N6287
ACTIVE–REGION SAFE OPERATING AREA
50
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I – V
limits of the transistor that must be observed for reliable
operation; i.e. the transistor must not be subjected to greater
dissipation than the curves indicate.
0.1 ms
0.5 ms
20
10
C
CE
1.0 ms
5.0 ms
5.0
2.0
dc
The data of Figure 5 is based on T
variable depending on conditions. Second breakdown pulse
= 200_C; T is
J(pk)
C
1.0 T = 200°C
J
limits are valid for duty cycles to 10% provided T
<
0.5
J(pk)
200_C. T
may be calculated from the data in Figure 4.
J(pk)
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
0.2
0.1
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
THERMAL LIMITATION @ T = 25°C
C
ąSINGLE PULSE
0.05
2.0
5.0
10
20
50
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. 2N6284, 2N6287
1000
10,000
5000
T = 25°C
J
T = 25°C
J
700
500
V = 3.0 Vdc
CE
= 10 A
I
C
2000
1000
500
C
ib
300
200
200
100
50
C
ob
2N6284 (NPN)
2N6287 (PNP)
2N6284 (NPN)
2N6287 (PNP)
20
10
100
1.0
2.0
5.0 10
20
50 100 200
500 1000
0.1 0.2
0.5
1.0 2.0
5.0
10
20
50 100
V , REVERSE VOLTAGE (VOLTS)
R
f, FREQUENCY (kHz)
Figure 6. Small–Signal Current Gain
Figure 7. Capacitance
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2N6283 2N6284 2N6286 2N6287
NPN
2N6284
PNP
2N6287
20,000
10,000
30,000
20,000
V
= 3.0 V
CE
V
= 3.0 V
CE
T = 150°C
J
10,000
7000
5000
T = 150°C
J
7000
5000
3000
2000
25°C
25°C
3000
2000
1000
700
-ā55°C
-ā55°C
1000
700
500
500
300
200
300
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
50
20
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 8. DC Current Gain
3.0
2.6
2.2
1.8
1.4
1.0
3.0
T = 25°C
T = 25°C
J
J
2.6
I
C
= 5.0 A
10 A
15 A
15 A
I
C
= 5.0 A
10 A
2.2
1.8
1.4
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
I , BASE CURRENT (mA)
B
I , BASE CURRENT (mA)
B
Figure 9. Collector Saturation Region
3.0
2.5
2.0
3.0
T = 25°C
J
T = 25°C
J
2.5
2.0
V
@ I /I = 250
C B
BE(sat)
V
@ I /I = 250
C B
1.5
1.0
0.5
1.5
1.0
0.5
BE(sat)
V
BE
@ V = 3.0 V
CE
V
BE
@ V = 3.0 V
CE
V
@ I /I = 250
C B
V
@ I /I = 250
CE(sat) C B
CE(sat)
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 10. “On” Voltages
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5
2N6283 2N6284 2N6286 2N6287
NPN
PNP
2N6284
2N6287
+ā5.0
+ā5.0
h
h
@ĂV
FEĂ
@ĂV
+Ă 3.0ĂV
+Ă 3.0ĂV
+ā4.0
+ā3.0
+ā2.0
+ā1.0
0
FEĂ
CEĂ
250
CEĂ
250
+ā4.0
+ā3.0
+ā2.0
+ā1.0
*APPLIES FOR I /I ≤
C B
*APPLIES FOR I /I ≤
C B
25°C to 150°C
25°C to 150°C
-ā55°C to + 25°C
-ā55°C to + 25°C
0
-ā1.0
-ā2.0
-ā3.0
-ā4.0
-ā5.0
-ā1.0
-ā2.0
*θV for V
C
CE(sat)
*θV for V
C
CE(sat)
25°C to + 150°C
25°C to + 150°C
-ā3.0
-ā4.0
-ā5.0
θV for V
B
BE
θV for V
B
BE
-ā55°C to + 25°C
-ā55°C to + 25°C
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 11. Temperature Coefficients
5
3
10
10
V
= 30 V
CE
V
= 30 V
CE
4
2
10
10
10
10
T = 150°C
J
3
1
0
10
T = 150°C
J
2
100°C
10
100°C
REVERSE
25°C
-1
1
10
10
10
10
REVERSE
FORWARD
FORWARD
0
-2
25°C
10
-1
-3
10
-ā0.6 -ā0.4 -ā0.2
0
+ā0.2 +ā0.4 +ā0.6 +ā0.8 +ā1.0 +ā1.2 + 1.4
+ā0.6 +ā0.4 +ā0.2
0
-ā0.2 -ā0.4 -ā0.6 -ā0.8 -ā1.0 -ā1.2 -ā1.4
V , BASE-EMITTER VOLTAGE (VOLTS)
BE
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut–Off Region
COLLECTOR
COLLECTOR
NPN
2N6284
PNP
2N6287
BASE
BASE
[ 8.0 k
[ 60
[ 8.0 k
[ 60
EMITTER
EMITTER
Figure 13. Darlington Schematic
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2N6283 2N6284 2N6286 2N6287
PACKAGE DIMENSIONS
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
C
SEATING
PLANE
–T–
E
K
D 2 PL
INCHES
DIM MIN MAX
1.550 REF
MILLIMETERS
M
M
M
Y
0.13 (0.005)
T
Q
MIN
MAX
A
B
C
D
E
G
H
K
L
39.37 REF
U
---
0.250
0.038
0.055
1.050
---
6.35
0.97
1.40
26.67
8.51
1.09
1.77
–Y–
L
V
H
0.335
0.043
0.070
2
1
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
B
G
11.18
12.19
16.89 BSC
N
Q
U
V
---
0.151
1.187 BSC
0.830
0.165
---
3.84
30.15 BSC
21.08
4.19
–Q–
0.13 (0.005)
M
M
Y
T
0.131
0.188
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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2N6283 2N6284 2N6286 2N6287
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2N6284/D
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