2N6287 [ONSEMI]
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS; 达林顿互补硅功率晶体管
| 型号： | 2N6287 |
| 厂家： | 
ONSEMI |
| 描述： | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| 文件： | 总6页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by 2N6282/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for general–purpose amplifier and low–frequency switching applica-
tions.
•
High DC Current Gain @ I = 10 Adc —
C
h
FE
h
FE
= 2400 (Typ) — 2N6282, 2N6283, 2N6284
= 4000 (Typ) — 2N6285, 2N6286, 2N6287
•
Collector–Emitter Sustaining Voltage —
V
V
V
= 60 Vdc (Min) — 2N6282, 2N6285
= 80 Vdc (Min) — 2N6283, 2N6286
= 100 Vdc (Min) — 2N6284, 2N6287
CEO(sus)
CEO(sus)
CEO(sus)
•
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
*Motorola Preferred Device
*MAXIMUM RATINGS
DARLINGTON
20 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 80, 100 VOLTS
160 WATTS
2N6282 2N6283 2N6284
2N6285 2N6286 2N6287
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
60
60
80
80
100
100
V
CB
EB
V
5.0
Collector Current — Continuous
Peak
I
C
20
40
Base Current
I
B
0.5
Adc
Total Device Dissipation @ T = 25 C
C
Derate above 25 C
P
D
160
0.915
Watts
W/ C
Operating and Storage Junction
Temperature Range
T ,T
J stg
–65 to +200
C
CASE 1–07
TO–204AA
(TO–3)
*THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
* Indicates JEDEC Registered Data.
R
1.09
C/W
θJC
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
C)
175
200
T
, CASE TEMPERATURE (
°
C
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995
*ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
V
Vdc
CEO(sus)
(I = 0.1 Adc, I = 0)
2N6282, 2N6285
2N6283, 2N6286
2N6284, 2N6287
60
80
100
—
—
—
C
B
Collector Cutoff Current
I
mAdc
CEO
(V
CE
(V
CE
(V
CE
= 30 Vdc, I = 0)
2N6282, 2N6285
2N6283, 2N6286
2N6284, 2N6287
—
—
—
1.0
1.0
1.0
B
= 40 Vdc, I = 0)
B
= 50 Vdc, I = 0)
B
Collector Cutoff Current
I
mAdc
mAdc
CEX
(V
CE
(V
CE
= Rated V , V
= Rated V , V
CB BE(off)
= 1.5 Vdc)
= 1.5 Vdc, T = 150 C)
—
—
0.5
5.0
CB BE(off)
C
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
I
—
2.0
EBO
BE
C
ON CHARACTERISTICS (1)
DC Current Gain
h
FE
—
(I = 10 Adc, V
= 3.0 Vdc)
= 3.0 Vdc)
750
100
18,000
—
C
CE
CE
(I = 20 Adc, V
C
Collector–Emitter Saturation Voltage
(I = 10 Adc, I = 40 mAdc)
V
Vdc
CE(sat)
—
—
2.0
3.0
C
B
(I = 20 Adc, I = 200 mAdc)
C
B
Base–Emitter On Voltage
(I = 10 Adc, V = 3.0 Vdc)
V
—
2.8
Vdc
Vdc
BE(on)
C
CE
Base–Emitter Saturation Voltage
(I = 20 Adc, I = 200 mAdc)
V
—
4.0
BE(sat)
C
B
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small–Signal Short–Circuit
Forward Current Transfer Ratio
|h
|
4.0
—
MHz
pF
fe
(I = 10 Adc, V
= 3.0 Vdc, f = 1.0 MHz)
C
CE
Output Capacitance
(V = 10 Vdc, I = 0, f = 0.1 MHz)
C
ob
2N6282,83,84
2N6285,86,87
—
—
400
600
CB
E
Small–Signal Current Gain
(I = 10 Adc, V = 3.0 Vdc, f = 1.0 kHz)
h
fe
300
—
—
C
CE
* Indicates JEDEC Registered Data.
(1) Pulse test: Pulse Width = 300 µs, Duty Cycle = 2%
10
7.0
5.0
t
s
2N6282/84 (NPN)
2N6285/87 (PNP)
V
CC
R
& R VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
B
– 30 V
D
MUST BE FAST RECOVERY TYPE e.g.,
1
3.0
1N5825 USED ABOVE I
100 mA
100 mA
R
B
C
SCOPE
MSD6100 USED BELOW I
2.0
B
TUT
t
t
f
r
R
V
B
2
1.0
0.7
APPROX
+ 8.0 V
D
51
0.5
1
8.0 k
50
0
V
I
I
= 30 Vdc
/I = 250
CC
C B
= I
0.3
0.2
V
1
APPROX
– 12 V
+ 4.0 V
FOR t AND t , D IS DISCONNECTED
AND V = 0
2
B1 B2
= 25°C
d
r
1
25 µs
t
@ V = 0 V
BE(off)
d
T
J
0.1
t , t
10 ns
r
f
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
DUTY CYCLE = 1.0%
I
, COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Times Test Circuit
Figure 3. Switching Times
2
Motorola Bipolar Power Transistor Device Data
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
P
(pk)
R
R
(t) = r(t) R
θ
0.1
0.05
0.02
θ
θ
JC
JC
JC
°C/W MAX
= 1.09
0.07
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.05
0.03
0.02
t
1
t
0.01
READ TIME AT t
1
2
T
– T = P
R (t)
θJC
J(pk)
C
(pk)
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
30
50
100
200 300 500
1000
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
ACTIVE–REGION SAFE OPERATING AREA
50
50
50
0.1 ms
0.1 ms
0.5 ms
0.1 ms
20
10
20
20
10
0.5 ms
0.5 ms
1.0 ms
5.0 ms
10
1.0 ms
1.0 ms
5.0 ms
5.0
5.0
5.0
5.0 ms
dc
dc
dc
2.0
1.0
0.5
2.0
1.0
0.5
2.0
1.0
T
= 200°C
T
= 200
°
C
T
J
= 200°C
J
J
0.5
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
0.2
0.2
0.1
0.2
0.1
0.1
THERMAL LIMITATION @ T = 25
°C
THERMAL LIMITATION @ T = 25
°C
THERMAL LIMITATION @ T = 25°C
C
C
C
SINGLE PULSE
SINGLE PULSE
SINGLE PULSE
0.05
0.05
0.05
2.0
5.0
10
20
50
100
2.0
5.0
10
20
50
100
2.0
5.0
10
20
50
100
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
V , COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
CE
CE
Figure 5. 2N6282, 2N6285
Figure 6. 2N6283, 2N6286
Figure 7. 2N6284, 2N6287
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
Safe operating area curves indicate I – V limits of the transistor that must be observed for reliable operation; i.e. the transistor
C
CE
must not be subjected to greater dissipation than the curves indicate.
The data of Figures 5, 6 and 7 is based on T = 200 C; T is variable depending on conditions. Second breakdown pulse
J(pk)
limits are valid for duty cycles to 10% provided T
temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by
second breakdown.
C
< 200 C. T
may be calculated from the data in Figure 4. At high case
J(pk)
J(pk)
1000
700
10,000
5000
T
= 25°C
T
= 25°C
J
J
V
I
= 3.0 Vdc
CE
= 10 A
2000
1000
500
C
500
C
ib
300
200
200
100
50
C
ob
2N6282/84 (NPN)
2N6285/87 (PNP)
2N6282/84 (NPN)
2N6285/87 (PNP)
20
10
100
1.0
2.0
5.0 10
20
50 100 200
500 1000
0.1 0.2
0.5
1.0 2.0
5.0
10
20
50
100
V
, REVERSE VOLTAGE (VOLTS)
f, FREQUENCY (kHz)
R
Figure 8. Small–Signal Current Gain
Figure 9. Capacitance
3
Motorola Bipolar Power Transistor Device Data
NPN
PNP
2N6282, 2N6283, 2N6284
2N6285, 2N6286, 2N6287
20,000
10,000
30,000
20,000
V
= 3.0 V
V
= 3.0 V
CE
CE
T
= 150°C
J
10,000
7000
5000
T
= 150°C
J
7000
5000
3000
2000
25°C
25°C
3000
2000
1000
700
–55°C
–55°C
1000
700
500
500
300
200
300
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
50
20
I
, COLLECTOR CURRENT (AMP)
I , COLLECTOR CURRENT (AMP)
C
C
Figure 10. DC Current Gain
3.0
2.6
2.2
1.8
1.4
1.0
3.0
T
= 25
°C
T = 25°C
J
J
2.6
2.2
1.8
1.4
1.0
I
= 5.0 A
10 A
15 A
15 A
C
I
= 5.0 A
10 A
C
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
I
, BASE CURRENT (mA)
I , BASE CURRENT (mA)
B
B
Figure 11. Collector Saturation Region
3.0
2.5
2.0
3.0
T
J
= 25°C
T
= 25
°
C
J
2.5
2.0
1.5
1.0
0.5
V
@ I /I = 250
C B
BE(sat)
V
BE(sat)
@ I /I = 250
C B
1.5
1.0
0.5
V
@ V = 3.0 V
CE
BE
V
@ V = 3.0 V
CE
BE
V
@ I /I = 250
C B
V
@ I /I = 250
CE(sat)
CE(sat) C B
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I
, COLLECTOR CURRENT (AMP)
I , COLLECTOR CURRENT (AMP)
C
C
Figure 12. “On” Voltages
4
Motorola Bipolar Power Transistor Device Data
NPN
PNP
2N6282, 2N6283, 2N6284
2N6285, 2N6286, 2N6287
+5.0
+4.0
+3.0
+2.0
+1.0
0
+5.0
h
h
FE
@ V
3.0 V
@ V
3.0 V
FE
CE
CE
+4.0
+3.0
+2.0
+1.0
*APPLIES FOR I /I
C B
≤
*APPLIES FOR I /I ≤
C B
250
250
25
°
C to 150°C
25°C to 150
°
C
–55
°
C to + 25°C
–55 C to + 25
°
°
C
0
–1.0
–1.0
–2.0
*
θV for V
*
θ
V
for V
CE(sat)
C CE(sat)
C
–2.0
–3.0
–4.0
–5.0
25°C to + 150°C
25°C to + 150°C
–3.0
–4.0
–5.0
θ
V
for V
BE
B
θ
V
for V
BE
B
–55
°C to + 25°C
–55°C to + 25°C
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
0.2 0.3
0.5 0.7 1.0
2.0 3.0
, COLLECTOR CURRENT (AMP)
C
5.0 7.0 10
20
I
, COLLECTOR CURRENT (AMP)
I
C
Figure 13. Temperature Coefficients
5
4
3
2
10
10
V
= 30 V
V
= 30 V
CE
CE
10
10
T
= 150°C
J
3
2
1
0
10
10
T
= 150°C
J
100°C
10
10
100°C
–1
–2
1
0
10
10
REVERSE
25
FORWARD
REVERSE
FORWARD
°
C
10
10
25°C
–1
10
–3
10
–0.6 –0.4 –0.2
0
+0.2 +0.4 +0.6 +0.8 +1.0 +1.2 + 1.4
+0.6 +0.4 +0.2
0
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4
V
, BASE–EMITTER VOLTAGE (VOLTS)
V
, BASE–EMITTER VOLTAGE (VOLTS)
BE
BE
Figure 14. Collector Cut–Off Region
NPN
COLLECTOR
PNP
COLLECTOR
2N6282
2N6283
2N6284
2N6285
2N6286
2N6287
BASE
BASE
8.0 k
60
8.0 k
60
EMITTER
EMITTER
Figure 15. Darlington Schematic
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
SEATING
PLANE
–T–
E
K
D 2 PL
0.13 (0.005)
INCHES
MIN MAX
1.550 REF
MILLIMETERS
M
M
M
T
Q
Y
DIM
A
B
C
D
E
MIN
MAX
39.37 REF
U
–––
0.250
0.038
0.055
1.050
–––
6.35
0.97
1.40
26.67
8.51
1.09
1.77
–Y–
L
V
H
0.335
0.043
0.070
2
1
G
H
K
L
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
B
G
11.18
12.19
16.89 BSC
N
Q
U
V
–––
0.151
1.187 BSC
0.131
0.830
–––
3.84
30.15 BSC
3.33
21.08
4.19
–Q–
0.165
0.188
M
M
0.13 (0.005)
T Y
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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2N6282/D
◊
相关型号：
2N6287LEADFREE
Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
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