2N6517RLRAG [ONSEMI]
高电压晶体管;
| 型号： | 2N6517RLRAG |
| 厂家： | 
ONSEMI |
| 描述： | 高电压晶体管 小信号双极晶体管 |
| 文件： | 总8页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
NPN
2N6515
2N6517
PNP
High Voltage Transistors
MAXIMUM RATINGS
2N6517
2N6520
Rating
Symbol
2N6515
250
Unit
Vdc
Vdc
Vdc
2N6520
Collector–Emitter Voltage
Collector–Base Voltage
V
V
350
CEO
Voltage and current are negative
for PNP transistors
250
350
CBO
Emitter–Base Voltage
2N6515, 2N6516, 2N6517
2N6519, 2N6520
V
EBO
6.0
5.0
Base Current
I
250
500
mAdc
mAdc
B
Collector Current –
Continuous
I
C
Total Device Dissipation
P
P
625
5.0
mW
mW/°C
D
1
@ T = 25°C
2
3
A
Derate above 25°C
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Total Device Dissipation
1.5
12
Watts
mW/°C
D
@ T = 25°C
C
Derate above 25°C
Operating and Storage
Junction
Temperature Range
T , T
J stg
–55 to +150
°C
COLLECTOR
3
THERMAL CHARACTERISTICS
Characteristic
2
Symbol Max
Unit
°C/W
°C/W
BASE
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
200
qJA
NPN
EMITTER
83.3
1
qJC
COLLECTOR
3
2
BASE
PNP
1
EMITTER
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Breakdown Voltage
V
Vdc
Vdc
Vdc
(BR)CEO
(I = 1.0 mAdc, I = 0)
2N6515
2N6517, 2N6520
250
350
–
–
C
B
Collector–Base Breakdown Voltage
(I = 100 µAdc, I = 0 )
V
(BR)CBO
2N6515
2N6517, 2N6520
250
350
–
–
C
E
Emitter–Base Breakdown Voltage
(I = 10 µAdc, I = 0)
V
(BR)EBO
2N6515, 2N6517
2N6520
6.0
5.0
–
–
E
C
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
October, 2001 – Rev. 3
2N6515/D
NPN 2N6515 2N6517 PNP 2N6520
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
OFF CHARACTERISTICS (Continued)
Collector Cutoff Current
Symbol
Min
Max
Unit
I
nAdc
CBO
(V
CB
(V
CB
= 150 Vdc, I = 0)
2N6515
2N6517, 2N6520
–
–
50
50
E
= 250 Vdc, I = 0)
E
Emitter Cutoff Current
I
nAdc
EBO
(V
EB
(V
EB
= 5.0 Vdc, I = 0)
2N6515, 2N6517
2N6520
–
–
50
50
C
= 4.0 Vdc, I = 0)
C
(1)
ON CHARACTERISTICS
DC Current Gain
(I = 1.0 mAdc, V
C
h
FE
–
= 10 Vdc)
= 10 Vdc)
= 10 Vdc)
= 10 Vdc)
2N6515
2N6517, 2N6520
35
20
–
–
CE
CE
CE
CE
(I = 10 mAdc, V
C
2N6515
2N6517, 2N6520
50
30
–
–
(I = 30 mAdc, V
C
2N6515
2N6517, 2N6520
50
30
300
200
(I = 50 mAdc, V
C
2N6515
2N6517, 2N6520
45
20
220
200
(I = 100 mAdc, V
C CE
= 10 Vdc)
2N6515
2N6517, 2N6520
25
15
–
–
Collector–Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
CE(sat)
–
–
–
–
0.30
0.35
0.50
1.0
C
B
(I = 20 mAdc, I = 2.0 mAdc)
C
B
(I = 30 mAdc, I = 3.0 mAdc)
C
C
B
B
(I = 50 mAdc, I = 5.0 mAdc)
Base–Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
BE(sat)
–
–
–
0.75
0.85
0.90
C
B
(I = 20 mAdc, I = 2.0 mAdc)
C
B
(I = 30 mAdc, I = 3.0 mAdc)
C
B
Base–Emitter On Voltage
(I = 100 mAdc, V = 10 Vdc)
V
–
2.0
BE(on)
C
CE
SMALL–SIGNAL CHARACTERISTICS
(1)
Current–Gain – Bandwidth Product
f
C
C
40
–
200
6.0
MHz
pF
T
(I = 10 mAdc, V = 20 Vdc, f = 20 MHz)
C
CE
Collector–Base Capacitance
(V = 20 Vdc, I = 0, f = 1.0 MHz)
cb
eb
CB
Emitter–Base Capacitance
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
E
pF
2N6515, 2N6517
2N6520
–
–
80
100
EB
C
SWITCHING CHARACTERISTICS
Turn–On Time
t
t
–
–
200
3.5
µs
µs
on
(V
CC
= 100 Vdc, V
BE(off)
= 2.0 Vdc, I = 50 mAdc, I = 10 mAdc)
B1
C
Turn–Off Time
(V = 100 Vdc, I = 50 mAdc, I = I = 10 mAdc)
off
CC B1 B2
C
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
NPN 2N6515 2N6517 PNP 2N6520
200
100
V
CE
= 10 V
T
= 125°C
25°C
J
70
50
-ā55°C
30
20
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain – NPN 2N6515
200
200
T
= 125°C
25°C
V
CE
= 10 V
J
V
CE
= -10 V
T
= 125°C
25°C
J
100
70
100
70
-ā55°C
50
50
-ā55°C
30
20
30
20
10
10
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
-1.0
-ā2.0 -ā3.0 -ā5.0 -ā7.0 -10
-ā20 -ā30 -ā50 -ā70 -100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. DC Current Gain – NPN 2N6517
Figure 3. DC Current Gain – PNP 2N6520
100
100
70
50
70
50
T = 25°C
J
T
= 25°C
= 20 V
J
30
20
30
20
V
= -ā20 V
V
CE
f = 20 MHz
CE
f = 20 MHz
10
10
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
-1.0
-ā2.0 -ā3.0 -ā5.0 -ā7.0 -10
-ā20 -ā30 -ā50 -ā70 -100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 4. Current–Gain – Bandwidth Product – NPN
2N6515, 2N6517
Figure 5. Current–Gain – Bandwidth Product – PNP
2N6520
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3
NPN 2N6515 2N6517 PNP 2N6520
NPN
1.4
1.2
-1.4
-1.2
T
= 25°C
J
T
= 25°C
J
1.0
-1.0
V
V
@ I /I = 10
C B
0.8
0.6
0.4
-0.8
-0.6
-0.4
BE(sat)
V
V
@ I /I = 10
C B
BE(sat)
@ V = -10 V
CE
BE(on)
V
@ V = 10 V
CE
BE(on)
0.2
0
-0.2
0
V
@ I /I = 10
C B
@ I /I = 10
C B
CE(sat)
CE(sat)
V
@ I /I = 5.0
C B
V
@ I /I = 5.0
C B
CE(sat)
20 30
CE(sat)
-ā20 -ā30
I , COLLECTOR CURRENT (mA)
1.0
2.0 3.0
5.0 7.0 10
50 70 100
-1.0
-ā2.0 -ā3.0 -ā5.0 -ā7.0 -10
-ā50 -ā70 -100
I , COLLECTOR CURRENT (mA)
C
C
Figure 6. “On” Voltages – NPN 2N6515, 2N6517
Figure 7. “On” Voltages – PNP 2N6520
2.5
2.5
2.0
I
I
C
C
2.0
1.5
1.0
0.5
0
ā + 10
ā + 10
I
I
B
B
1.5
1.0
0.5
0
25°C to 125°C
25°C to 125°C
R
for V
BE
θVB
R
for V
CE(sat)
θVC
-ā55°C to 25°C
-ā55°C to 25°C
-ā0.5
-ā1.0
-ā1.5
-ā2.0
-ā2.5
-ā0.5
-ā1.0
-ā1.5
-ā2.0
-ā2.5
-ā55°C to 125°C
R
for V
CE(sat)
R
for V
BE
θVC
θVB
-ā55°C to 125°C
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
-1.0
-ā2.0 -ā3.0 -ā5.0 -ā7.0 -10
-ā20 -ā30 -ā50 -ā70 -100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 8. Temperature Coefficients – NPN 2N6515,
2N6517
Figure 9. Temperature Coefficients – PNP 2N6520
100
100
70
50
70
C
T
= 25°C
T = 25°C
J
eb
J
50
C
eb
30
20
30
20
10
7.0
5.0
10
7.0
5.0
C
cb
C
cb
3.0
2.0
3.0
2.0
1.0
1.0
0.2
0.5 1.0 2.0
5.0
10
20
50 100 200
-ā0.2
-ā0.5 -ā1.0 -ā2.0
-ā5.0 -ā10 -ā20
-ā50 -ā100 -ā200
V , REVERSE VOLTAGE (VOLTS)
R
V , REVERSE VOLTAGE (VOLTS)
R
Figure 10. Capacitance – NPN 2N6515, 2N6517
Figure 11. Capacitance – PNP 2N6520
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4
NPN 2N6515 2N6517 PNP 2N6520
1.0Ăk
700
1.0Ăk
700
V
= 100 V
V
= -100 V
CE(off)
I /I = 5.0
CE(off)
t
@ V = 2.0 V
BE(off)
d
500
500
I /I = 5.0
C B
T = 25°C
J
t
@ V = 2.0 V
BE(off)
C B
= 25°C
d
t
T
J
300
200
300
200
t
r
r
100
70
100
70
50
50
30
20
30
20
10
10
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
-1.0
-ā2.0 -ā3.0 -ā5.0 -ā7.0 -10
-ā20 -ā30 -ā50 -ā70 -100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 12. Turn–On Time – NPN 2N6515, 2N6517
Figure 13. Turn–On Time – PNP 2N6520
10Ăk
2.0Ăk
t
7.0Ăk
5.0Ăk
s
t
1.0Ăk
700
s
3.0Ăk
2.0Ăk
500
300
200
t
f
V
= -100 V
CE(off)
I /I = 5.0
V
= 100 V
CE(off)
I /I = 5.0
C B
= I
1.0Ăk
700
500
I
t
C B
= I
B1 B2
= 25°C
f
I
T
B1 B2
= 25°C
J
T
100
70
J
300
200
50
30
20
100
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
-1.0
-ā2.0 -ā3.0 -ā5.0 -ā7.0 -10
-ā20 -ā30
-ā50 -ā70 -100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 14. Turn–Off Time – NPN 2N6515, 2N6517
Figure 15. Turn–Off Time – PNP 2N6520
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NPN 2N6515 2N6517 PNP 2N6520
+V
CC
V
ADJUSTED
2.2 k
CC
FOR V
20 k
= 100 V
CE(off)
1.0 k
+10.8 V
50 Ω SAMPLING SCOPE
50
1/2MSD7000
-9.2 V
PULSE WIDTH ≈ 100 µs
t , t ≤ 5.0 ns
DUTY CYCLE ≤ 1.0%
FOR PNP TEST CIRCUIT,
REVERSE ALL VOLTAGE POLARITIES
r
f
APPROXIMATELY
-1.35 V
(ADJUST FOR V
(BE)off
= 2.0 V)
Figure 16. Switching Time Test Circuit
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
SINGLE PULSE
SINGLE PULSE
0.05
0.1
0.1
0.07
0.05
Z
Z
= r(t) • R
= r(t) • R
T
- T = P
C
- T = P
Z
θJC(t)
θJA(t)
θJC J(pk)
(pk) θJC(t)
0.03
0.02
T
Z
θJA J(pk)
A
(pk) θJA(t)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0Ăk 2.0Ăk
5.0Ăk 10Ăk
t, TIME (ms)
Figure 17. Thermal Response
500
FIGURE A
10 µs
100 µs
T
A
= 25°C
200
100
t
P
1.0 ms
T
= 25°C
C
P
P
P
P
50
100 ms
20
10
CURRENT LIMIT
THERMAL LIMIT
5.0
ă(PULSE CURVES @ T = 25°C)
C
SECOND BREAKDOWN LIMIT
t
1
2.0
1.0
0.5
2N6515
1/f
CURVES APPLY
BELOW RATED V
t
CEO
10
1
2N6517, 2N6520
DUTYĂCYCLE + t Ăf +
1
t
P
0.5 1.0 2.0
5.0
20
50 100 200
500
PEAK PULSE POWER = P
P
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 18. Active Region Safe Operating Area
Design Note: Use of Transient Thermal Resistance Data
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NPN 2N6515 2N6517 PNP 2N6520
PACKAGE DIMENSIONS
CASE 029–04
(TO–226AA)
ISSUE AD
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
DIM MIN MAX
MILLIMETERS
K
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
---
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
---
A
B
C
D
F
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
---
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
---
D
J
X X
G
G
H
J
H
V
SECTION X–X
K
L
C
---
---
N
P
R
V
0.105
0.100
---
2.66
2.54
---
1
N
0.115
0.135
2.93
3.43
N
---
---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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NPN 2N6515 2N6517 PNP 2N6520
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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2N6515/D
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