2N6520TA [ONSEMI]
High Voltage PNP Bipolar Junction Transistor;
| 型号： | 2N6520TA |
| 厂家： | 
ONSEMI |
| 描述： | High Voltage PNP Bipolar Junction Transistor PC 晶体管 |
| 文件： | 总6页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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PNP Epitaxial Silicon
Transistor
2N6520
Features
1
2
3
• High Voltage Transistor
• Collector−Emitter Voltage: V
= −350 V
CBO
TO−92 3 4.83x4.76
LEADFORMED
CASE 135AR
• Collector Dissipation: P (max) = 625 mW
C
• Complement to 2N6517
• This is a Pb−Free Device
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATINGS
2N
(Values are at T = 25°C unless otherwise noted.)
A
6520
AYWW
Symbol
Parameter
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Value
−350
Unit
V
V
CBO
V
CEO
V
EBO
1: Emitter
2: Base
−350
V
3: Collector
1
2
3
−5
V
I
C
−500
mA
mA
°C
°C
2N6520
A
= Device Code
= Assembly Code
= Date Code
I
B
Base Current
−250
YWW
T
J
Junction Temperature
Storage Temperature
150
T
STG
−55 to 150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
2N6520TA
Package
Shipping
TO−92 3
2000 Units /
THERMAL CHARACTERISTICS (Note 1)
(Pb−Free)
Fan−Fold
(Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Collector Power Dissipation
Derate Above 25°C
Value
625
5.0
Unit
mW
P
C
mW/°C
°C/W
R
Thermal Resistance,
Junction−to−Ambient
200
q
JA
1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)
with minimum land pattern size.
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
June, 2023 − Rev. 3
2N6520/D
2N6520
ELECTRICAL CHARACTERISTICS
(Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage (Note 2)
Emitter−Base Breakdown Voltage
Collector Cut−Off Current
Conditions
= −100 mA, I = 0
Min.
−350
−350
−5
−
Max.
−
Unit
V
BV
BV
BV
I
I
CBO
CEO
EBO
C
E
= −1 mA, I = 0
−
V
C
B
I = −10 mA, I = 0
−
V
E
C
I
V
= −250 V, I = 0
−50
−50
−
nA
nA
CBO
CB
EB
CE
CE
CE
CE
CE
E
I
Emitter Cut−Off Current
V
V
V
V
V
V
= −4 V, I = 0
−
EBO
C
h
FE
DC Current Gain (Note 2)
= −10 V, I = −1 mA
20
30
30
20
15
−
C
= −10 V, I = −10 mA
−
C
= −10 V, I = −30 mA
200
200
−
C
= −10 V, I = −50 mA
C
= −10 V, I = −100 mA
C
V
V
(sat)
(sat)
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
I
C
I
C
I
C
I
C
I
C
I
C
I
C
= −10 mA, I = −1 mA
−0.30
−0.35
−0.50
−1.00
−0.75
−0.85
−0.90
−2
V
V
CE
B
= −20 mA, I = −2 mA
−
B
= −30 mA, I = −3 mA
−
B
= −50 mA, I = −5 mA
−
B
= −10 mA, I = −1 mA
−
BE
B
= −20 mA, I = −2 mA
−
B
= −30 mA, I = −3 mA
−
B
V
BE
(on)
Base−Emitter On Voltage
V
V
= −10 V, I = −100 mA
−
V
CE
C
f
T
Current Gain Bandwidth Product (Note 2)
= −20 V, I = −10 mA,
40
200
MHz
CE
C
f = 20 MHz
C
Output Capacitance
Emitter−Base Capacitance
Turn−On Time
V
V
V
= −20 V, I = 0, f = 1 MHz
−
−
−
6
pF
pF
ns
ob
CB
EB
BE
E
C
= −0.5 V, I = 0, f = 1 MHz
100
200
EB
C
t
(off) = −2 V, V = −100 V,
CC
ON
I
= −50 mA, I = −10 mA
C
B1
t
Turn−Off Time
V
B1
= −100 V, I = −50 mA,
B2
−
3.5
ns
OFF
CC
C
I
= I = −10 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2%
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2
2N6520
TYPICAL PERFORMANCE CHARACTERISTICS
1000
100
−10000
V
= −20 V
I = 10 I
C B
CE
V
(sat)
CE
−1000
−100
−10
V
BE
(sat)
10
1
−10
−1
−100
−1000
−10000
−10
−100
−1000
−10000
−1
I , Collector Current (mA)
C
I , Collector Current (mA)
C
Figure 1. DC Current Gain
Figure 2. Base−Emitter Saturation Voltage and
Collector−Emitter Saturation Voltage
1000
100
t
D
@ V (off) = −2.0 V
BE
t
STG
V
(off) = −100 V
CE
1000
100
I /I = 5
C
B
T = 25°C
J
V
CE
(off) = −100 V
t
F
I /I = 5
C
B
t
R
I
B1
= I
B2
T = 25°C
J
10
−10
−1
−10
I , Collector Current (mA)
−100
−1
−100
I , Collector Current (mA)
C
C
Figure 3. Turn−On Time
Figure 4. Turn−Off Time
3.0
2.5
100
10
1
I /I = 10
C
B
f = 1 MHz
2.0
−55°C to 125°C
C
ib
1.5
1.0
R
for V
BE
0.5
q
VE
−55°C to 25°C
0.0
−0.5
−1.0
−1.5
−2.0
−2.5
C
ob
−55°C to 125°C
R
for V (sat
)
q
VC
CE
−1
−10
I , Collector Current (mA)
−100
−0.1
−1
, Collector−Base Voltage (V)
CB
−10
−100
V
C
Figure 5. Temperature Coefficient
Figure 6. Capacitance
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3
2N6520
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1000
100
10
V
= −20 V
CE
−10
I , Collector Current (mA)
−100
−1
C
Figure 7. Current Gain Bandwidth Product
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.83x4.76 LEADFORMED
CASE 135AR
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13879G
TO−92 3 4.83X4.76 LEADFORMED
PAGE 1 OF 1
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