2N7000-D74Z [ONSEMI]
N沟道增强模式场效应晶体管60V，200mA，5Ω;
| 型号： | 2N7000-D74Z |
| 厂家： | 
ONSEMI |
| 描述： | N沟道增强模式场效应晶体管60V，200mA，5Ω 开关 小信号场效应晶体管 |
| 文件： | 总4页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7000
Preferred Device
Small Signal MOSFET
200 mAmps, 60 Volts
N–Channel TO–92
MAXIMUM RATINGS
http://onsemi.com
Rating
Drain Source Voltage
Drain–Gate Voltage (R
Symbol
Value
60
Unit
Vdc
Vdc
200 mAMPS
60 VOLTS
V
DSS
= 1.0 MΩ)
V
DGR
60
GS
R
= 5 Ω
DS(on)
Gate–Source Voltage
– Continuous
V
±ā20
±ā40
Vdc
Vpk
GS
N–Channel
– Non–repetitive (t ≤ 50 µs)
V
GSM
p
D
Drain Current
– Continuous
– Pulsed
mAdc
I
200
500
D
I
DM
Total Power Dissipation @ T = 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
C
G
Operating and Storage Temperature
Range
T , T
–55 to
+150
°C
J
stg
S
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
R
357
°C/W
TO–92
CASE 29
Style 22
θJA
Maximum Lead Temperature for
Soldering Purposes, 1/16″ from case
for 10 seconds
T
300
°C
L
1
2
3
MARKING DIAGRAM
& PIN ASSIGNMENT
2N7000
YWW
1
3
Source
Drain
2
Gate
Y
WW
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2000
1
Publication Order Number:
November, 2000 – Rev. 5
2N7000/D
2N7000
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
V
60
–
Vdc
(BR)DSS
(V
GS
= 0, I = 10 µAdc)
D
Zero Gate Voltage Drain Current
I
DSS
(V
DS
(V
DS
= 48 Vdc, V
= 48 Vdc, V
= 0)
–
–
1.0
1.0
µAdc
mAdc
GS
GS
= 0, T = 125°C)
J
Gate–Body Leakage Current, Forward
(V = 15 Vdc, V = 0)
I
–
–10
nAdc
GSSF
GSF
DS
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
V
0.8
3.0
Vdc
GS(th)
(V
DS
= V , I = 1.0 mAdc)
GS
D
Static Drain–Source On–Resistance
r
Ohm
DS(on)
(V
GS
(V
GS
= 10 Vdc, I = 0.5 Adc)
–
–
5.0
6.0
D
= 4.5 Vdc, I = 75 mAdc)
D
Drain–Source On–Voltage
V
Vdc
DS(on)
(V
GS
(V
GS
= 10 Vdc, I = 0.5 Adc)
–
–
2.5
0.45
D
= 4.5 Vdc, I = 75 mAdc)
D
On–State Drain Current
(V = 4.5 Vdc, V
I
75
–
–
mAdc
d(on)
= 10 Vdc)
DS
GS
Forward Transconductance
(V = 10 Vdc, I = 200 mAdc)
g
fs
100
µmhos
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
–
–
–
60
25
pF
ns
iss
Output Capacitance
C
oss
(V
DS
= 25 V, V = 0,
GS
f = 1.0 MHz)
Reverse Transfer
Capacitance
C
5.0
rss
SWITCHING CHARACTERISTICS (Note 1.)
Turn–On Delay Time
t
t
–
–
10
10
on
(V
DD
= 15 V, I = 500 mA,
D
R
= 25 W, R = 30 W, V = 10 V)
G
L
gen
Turn–Off Delay Time
off
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
http://onsemi.com
2
2N7000
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
V
= 10 V
T
= 25°C
DS
A
25°C
-ā55°C
0.8
0.6
0.4
0.2
V
= 10 V
9 V
GS
125°C
8 V
7 V
6 V
5 V
4 V
3 V
0
1.0 2.0 3.0 4.0 5.0
6.0
7.0 8.0 9.0 10
0
1.0 2.0 3.0 4.0
5.0
6.0 7.0 8.0
9.0 10
V , DRAIN SOURCE VOLTAGE (VOLTS)
DS
V , GATE SOURCE VOLTAGE (VOLTS)
GS
Figure 1. Ohmic Region
Figure 2. Transfer Characteristics
2.4
1.2
1.05
1.1
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V = V
DS GS
V
I
= 10 V
GS
I
D
= 1.0 mA
= 200 mA
D
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-ā60
-ā20
+ā20
+ā60
+ā100
+ā140
-ā60
-ā20
+ā20
+ā60
+ā100
+ā140
T, TEMPERATURE (°C)
T, TEMPERATURE (°C)
Figure 3. Temperature versus Static
Drain–Source On–Resistance
Figure 4. Temperature versus Gate
Threshold Voltage
ORDERING INFORMATION
Device
Package
TO–92
TO–92
TO–92
TO–92
TO–92
Shipping
2N7000
1000 Unit/Box
2N7000RLRA
2N7000RLRM
2N7000RLRP
2N7000ZL1
2000 Tape & Reel
2000 Ammo Pack
2000 Ammo Pack
2000 Ammo Pack
http://onsemi.com
3
2N7000
PACKAGE DIMENSIONS
TO–92
CASE 29–11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
---
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
---
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
---
0.205
0.210
0.165
0.021
0.055
0.105
0.020
---
D
X X
G
J
H
V
K
L
---
---
C
N
P
R
V
0.105
0.100
---
2.66
2.54
---
SECTION X–X
0.115
0.135
2.93
3.43
1
N
---
---
N
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
CENTRAL/SOUTH AMERICA:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: ONlit–spanish@hibbertco.com
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
then Dial 866–297–9322
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
001–800–4422–3781
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: ONlit–german@hibbertco.com
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)
Email: ONlit–french@hibbertco.com
Email: ONlit–asia@hibbertco.com
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: r14525@onsemi.com
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)
Email: ONlit@hibbertco.com
ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
For additional information, please contact your local
Sales Representative.
*Available from Germany, France, Italy, UK, Ireland
2N7000/D
相关型号：
©2020 ICPDF网 联系我们和版权申明