2N7002V [ONSEMI]
N沟道增强模型场效应晶体管;
| 型号： | 2N7002V |
| 厂家： | 
ONSEMI |
| 描述： | N沟道增强模型场效应晶体管 PC 开关 光电二极管 晶体管 场效应晶体管 |
| 文件： | 总6页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel
Enhancement Mode Field
Effect Transistor
6
5
4
1
2
3
SOT−563
CASE 419BH
60 V, 0.28 A, 2 W
*Pin 1 and Pin 4 are exchangeable.
2N7002V/ꢀ2N7002VA
MARKING DIAGRAM
Features
• Dual N−Channel MOSFET
• Low On−Resistance
AX&G
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
AX = Device Code (X = B or C)
&G = 1−Digit Weekly Date Code
• Low Input/Output Leakage
• Ultra−Small Surface Mount Package
• This Device is Pb−Free, Halide Free and RoHS Compliant
PIN ASSIGNMENT
D2
G1
S1
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
V
V
DSS
DGR
Drain − Source Voltage
60
V
Gate − Gate Voltage (R ≤ 1.0 Mꢀ)
60
V
GS
V
GSS
Gate−Source Voltage
− Continuous
− Pulsed
20
40
V
S2
D2
G2
D1
G1
I
Drain Current
− Continuous
− Pulsed
280
mA
A
D
2N7002V
1.5
T , T
Junction and Storage Temperature
Range
−55 to +150
°C
J
STG
S1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Ratings
250
Unit
mW
P
D
Total Device Dissipation
G2
S2
D1
Derate Above T = 25°C
2.0
mW/°C
°C/W
A
2N7002VA
R
ꢁ
JA
Thermal Resistance,
Junction−to−Ambient (Note 1)
500
1. Device mounted on FR−4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land
pad size.
ORDERING INFORMATION
See detailed ordering and shipping information on page 4
of this data sheet.
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
July, 2023 − Rev. 2
2N7002VA/D
2N7002V/2N7002VA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
V
DS
V
DS
V
GS
= 0 V, I = 10 ꢂ A
60
78
0.001
7
−
V
DSS
D
I
= 60 V, V = 0 V
−
1.0
500
100
ꢂ
A
DSS
GS
= 60 V, V = 0 V, T = 125°
GS
J
I
Gate−Body Leakage
=
20 V, V = 0 V
−
0.2
nA
GSS
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
DS
V
GS
V
GS
V
GS
V
GS
V
DS
= V , I = 250 ꢂA
1.00
−
1.76
1.6
2.50
7.5
2.0
13.5
−
V
GS(th)
DS(on)
GS
D
R
Static Drain−Source On−Resistance
= 5 V, I = 0.05 A
ꢀ
D
= 10 V, I = 0.5 A
−
−
D
= 10 V, I = 0.5 A, T = 125°C
−
2.53
1.43
356.5
D
J
I
On−State Drain Current
= 10 V, V = 7.5 V
1.50
80
A
D(on)
DS
g
FS
Forward Transconductance
= 10 V, I = 0.2 A
−
mS
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 25 V, V = 0 V, f = 1.0 MHz
−
−
−
37.8
12.4
6.5
50
25
7
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
SWITCHING CHARACTERISTICS
t
t
Turn−On Delay Time
Turn−Off Delay Time
V
= 30 V, I = 0.2 A V = 10 V,
GEN
−
−
5.85
12.5
20
20
ns
ns
d(on)
d(off)
DD
L
D
R = 150
ꢀ
ꢃ
R
= 25 ꢀ
GEN
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Short duration test pulse used to minimize self−heating effect.
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2
2N7002V/2N7002VA
TYPICAL PERFORMANCE CHARACTERISTICS
3.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4 V
V
= 10 V
5 V
GS
4.5 V
V
GS
= 3 V
5 V
6 V
2.5
2.0
1.5
1.0
4 V
10 V
9 V
3 V
8
8 V
7 V
0.6
2 V
0
1
2
3
4
5
6
7
9
10
150
6
0.0
0.2
0.4
0.8
1.0
V
, DRAIN−SOURCE VOLTAGE (V)
DS
I , DRAIN−SOURCE CURRENT (A)
D
Figure 1. On − Region Characteristics
Figure 2. On−Resistance Variation
with Gate Voltage and Drain Current
3.0
2.5
2.0
1.5
1.0
0.5
3.0
2.5
2.0
1.5
1.0
V
D
= 10 V
= 500 mA
GS
I
I
= 500 mA
D
I
D
= 50 mA
−50
0
50
100
2
4
V , GATE−SOURCE VOLTAGE (V)
GS
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On−Resistance Variation
Figure 4. On−Resistance Variation
with Gate−Source Voltage
with Temperature
1.0
2.5
2.0
1.5
1.0
V
GS
= V
DS
V
DS
= 10 V
T = −25°C
J
150°C
0.8
0.6
0.4
0.2
0.0
25°C
125°C
I
D
= 1 mA
75°C
I
D
= 0.25 mA
2
3
4
5
−50
0
50
100
150
V
, GATE−SOURCE VOLTAGE (V)
GS
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with Temperature
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3
2N7002V/2N7002VA
TYPICAL ELECTRICAL CHARACTERISTICS (continued)
300
250
V
= 0 V
GS
150°C
100
200
150
100
50
25°C
10
1
−55°C
0
0.0
0.2
0.4
0.6
0.8
1.0
0
25
50
75
100
125
150
175
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T , AMBIENT TEMPERATURE (°C)
a
Figure 7. Reverse Drain Current Variation with Diode
Forward Voltage and Temperature
Figure 8. Power Derating
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
2N7002V
2N7002VA
Device Marking
Package
Shipping
AB
AC
SOT−563 (Pb−Free)
SOT−563 (Pb−Free)
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−563
CASE 419BH
ISSUE O
DATE 31 AUG 2016
1.70
A
1.50
B
6
1
4
1.42
1.30
1.10
1.70
1.50
0.1 C B A
3
0.30
0.50
0.72
0.50
0.20
0.50
LAND PATTERN
RECOMMENDATION
TOP VIEW
0.60
0.50
C
SEATING PLANE
0.10
0.00
0.20
0.08
0.05 C
C
NOTES: UNLESS OTHERWISE SPECIFIED.
A. REFERENCE TO JEDEC MO293.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C
DOES NOT COMPLY JEDEC STANDARD VALUE.
0.30
0.10
0.46
0.20
C
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSION.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
F. LANDPATTERN RECOMMENDATION GENERATED
WITH IPC LANDPATTERN GENERATOR
0.31
0.15
0.10
0.05
M
M
C A B
C
BOTTOM VIEW
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13790G
SOT−563
PAGE 1 OF 1
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