2SA1020RLRAG [ONSEMI]
1.0 W High Current PNP Bipolar Transistor;
| 型号： | 2SA1020RLRAG |
| 厂家： | 
ONSEMI |
| 描述： | 1.0 W High Current PNP Bipolar Transistor 晶体管 |
| 文件： | 总5页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
2SA1020
One Watt High Current
PNP Transistor
Features
• This is a Pb−Free Device*
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MAXIMUM RATINGS
VOLTAGE AND CURRENT
ARE NEGATIVE FOR
PNP TRANSISTORS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
50
Unit
Vdc
Vdc
Vdc
Adc
V
CE
V
CB
V
EB
50
5.0
2.0
COLLECTOR
2
Collector Current − Continuous
I
C
Total Power Dissipation @ T = 25°C
P
D
900
5.0
mW
mW/°C
A
Derate above 25°C
3
PNP
BASE
Total Power Dissipation @ T = 25°C
P
D
1.5
12
W
mW/°C
C
Derate above 25°C
1
Operating and Storage Junction Temperature T , T
−55 to
+150
°C
J
stg
EMITTER
Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
125
Unit
°C/W
°C/W
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
R
q
JA
R
83.3
q
JC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
TO−92 (TO−226)
CASE 29−10
1
1
2
2
STYLE 14
3
3
BENT LEAD
STRAIGHT LEAD
BULK PACK
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2SA
1020
AYWW G
G
A
Y
= Assembly Location
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
August, 2010 − Rev. 4
2SA1020/D
2SA1020
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 1)
V
Vdc
mAdc
mAdc
(BR)CEO
(I = 10 mAdc, I = 0)
50
−
C
B
Collector Cutoff Current
(V = 50 Vdc, I = 0)
I
CBO
−
−
1.0
1.0
CB
E
Emitter Cutoff Current
(V = 5.0 V, I = 0)
I
EBO
EB
C
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
−
(I = 500 mA, V = 2.0 V)
70
40
240
−
C
CE
(I = 1.5 A, V = 2.0 V)
C
CE
Collector−Emitter Saturation Voltage
(I = 1.0 A, I = 50 mA)
V
V
Vdc
Vdc
CE(sat)
−
−
0.5
1.2
C
B
Base−Emitter Saturation Voltage (I = 1.0 A, I = 50 mA)
C
B
BE(sat)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 3)
f
T
100
−
MHz
(I = 500 mAdc, V = 2.0 Vdc, f = 100 MHz)
C
CE
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
3. f is defined as the frequency at which |h | extrapolates to unity.
T
fe
ORDERING INFORMATION
†
Device
Package
Shipping
2SA1020RLRAG
TO−92
(Pb−Free)
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
2SA1020
−2.0
−1.8
−1.6
−1.4
−1.2
−1.0
−0.8
−0.6
−0.4
−0.2
0
250
225
T = 125°C
J
V
CE
= −2.0 V
200
175
150
125
100
75
25°C
V
@ I /I = 10
C B
BE(sat)
−55°C
V
@ V = 2.0 V
CE
BE(on)
50
V
@ I /I = 10
C B
CE(sat)
25
0
−10 −20
−50 −100 −200−500 −1.0 A −2.0 A −4.0 A
−50
−100
−200
−500 −1.0 A −2.0 A −4.0 A
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 1. Typical DC Current Gain
Figure 2. On Voltages
−1.0
−10
−0.9
−0.8
−0.7
−4.0
T = 25°C
J
100 ms
−2.0
−1.0
1.0 ms
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
0
−0.5
−0.2
−0.1
T = 25°C
A
T
C
= 25°C
I
= −500 mA
I = −2.0 A
C
C
−0.05
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
I
C
= −10 mA I = −100 mA
C
−0.02
−0.01
−0.05−0.1−0.2 −0.5−1.0−2.0 −5.0−10−20 −50−100−200 −500
−1.0
−2.0 −5.0 −10 −20
−50
−100
I , BASE CURRENT (mA)
B
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 4. Safe Operating Area
Figure 3. Collector Saturation Region
http://onsemi.com
3
2SA1020
PACKAGE DIMENSIONS
TO−92 (TO−226) 1 WATT
CASE 29−10
ISSUE O
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
UNCONTROLLED.
STRAIGHT LEAD
BULK PACK
B
R
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN DI
MENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
P
L
F
K
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.44
7.37
3.18
0.46
0.41
1.15
2.42
0.46
12.70
6.35
2.04
---
MAX
5.21
7.87
4.19
0.53
0.48
1.39
2.66
0.61
---
A
B
C
D
F
0.175
0.290
0.125
0.018
0.016
0.045
0.095
0.018
0.500
0.250
0.080
---
0.205
0.310
0.165
0.021
0.019
0.055
0.105
0.024
---
D
X X
G
J
H
V
G
H
J
C
K
L
SECTION X−X
---
---
1
N
N
P
R
V
0.105
0.100
---
2.66
2.54
---
STYLE 14:
PIN 1. EMITTER
N
0.135
0.135
3.43
3.43
2. COLLECTOR
3. BASE
---
---
A
NOTES:
BENT LEAD
TAPE & REEL
AMMO PACK
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS
UNCONTROLLED.
R
B
4. DIMENSION F APPLIES BETWEEN DIMENSIONS P
AND L. DIMENSIONS D AND J APPLY BETWEEN
DIMENSIONS L AND K MINIMUM. THE LEAD
DIMENSIONS ARE UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
P
T
SEATING
PLANE
K
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.44
7.37
3.18
0.46
2.40
0.46
12.70
2.04
---
MAX
5.21
7.87
4.19
0.53
2.80
0.61
---
A
B
C
D
G
J
0.175
0.290
0.125
0.018
0.094
0.018
0.500
0.080
---
0.205
0.310
0.165
0.021
0.102
0.024
---
D
X X
G
J
K
N
P
R
V
V
C
0.105
0.100
---
2.66
2.54
---
SECTION X−X
0.135
0.135
3.43
3.43
1
N
---
---
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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Phone: 421 33 790 2910
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For additional information, please contact your local
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2SA1020/D
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