概述
规格参数
数据手册2SA1162GT1 概述
General Purpose Amplifier Transistors 通用放大器晶体管 小信号双极晶体管
2SA1162GT1 规格参数
| 是否无铅： | 含铅 | 生命周期： | End Of Life |
| 零件包装代码： | SC-59 | 包装说明： | CASE 318D-04, SC-59, 3 PIN |
| 针数： | 3 | Reach Compliance Code： | not_compliant |
| ECCN代码： | EAR99 | HTS代码： | 8541.21.00.95 |
| 风险等级： | 5.33 | Is Samacsys： | N |
| 最大集电极电流 (IC)： | 0.15 A | 集电极-发射极最大电压： | 50 V |
| 配置： | SINGLE | 最小直流电流增益 (hFE)： | 200 |
| JESD-30 代码： | R-PDSO-G3 | JESD-609代码： | e0 |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 3 | 最高工作温度： | 150 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | 240 |
| 极性/信道类型： | PNP | 最大功率耗散 (Abs)： | 0.2 W |
| 认证状态： | Not Qualified | 子类别： | Other Transistors |
| 表面贴装： | YES | 端子面层： | Tin/Lead (Sn80Pb20) |
| 端子形式： | GULL WING | 端子位置： | DUAL |
| 处于峰值回流温度下的最长时间： | 30 | 晶体管应用： | AMPLIFIER |
| 晶体管元件材料： | SILICON | 标称过渡频率 (fT)： | 80 MHz |
| Base Number Matches： | 1 |
2SA1162GT1 数据手册
通过下载2SA1162GT1数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载2SA1162GT1, 2SA1162YT1
General Purpose
Amplifier Transistors
PNP Surface Mount
• Moisture Sensitivity Level: 1
• ESD Rating: TBD
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS (T = 25°C)
A
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Symbol
Value
50
Unit
Vdc
V
(BR)CBO
(BR)CEO
(BR)EBO
V
V
50
Vdc
7.0
150
200
30
Vdc
2
1
BASE
EMITTER
I
C
mAdc
mAdc
mAdc
I
C(P)
MARKING DIAGRAM
I
B
3
THERMAL CHARACTERISTICS
Characteristic
2
SAx
M
1
Symbol
Max
200
Unit
mW
°C
SC−59
Power Dissipation
P
D
CASE 318D
STYLE 1
SA = Specific Device Code
Junction Temperature
Storage Temperature
T
J
150
x
M
= G or Y
= Date Code
T
stg
−55 to +150
°C
ORDERING INFORMATION
†
Device†
Package
SC−59
Shipping
2SA1162GT1
2SA1162YT1
3000/Tape & Reel
3000/Tape & Reel
SC−59
†The “T1” suffix refers to a 7 inch reel.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
Semiconductor Components Industries, LLC, 2003
Publication Order Number:
October, 2003 − Rev. 0
2SA1162GT1/D
2SA1162GT1, 2SA1162YT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Collector−Emitter Breakdown Voltage (I = 2.0 mAdc, I = 0)
Symbol
Min
50
50
7.0
−
Max
−
Unit
Vdc
Vdc
Vdc
mAdc
mA
V
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector−Base Breakdown Voltage (I = 10 mAdc, I = 0)
V
V
−
C
E
Emitter−Base Breakdown Voltage (I = 10 mAdc, I = 0)
−
E
C
Collector−Base Cutoff Current (V = 50 Vdc, I = 0)
I
CBO
0.1
0.1
CB
E
Emitter Cut−off Current (V = 5 V, I = 0 V)
I
−
EB
C
EBO
CEO
Collector−Emitter Cutoff Current
I
(V = 10 Vdc, I = 0)
−
−
0.1
2.0
mAdc
mAdc
CE
B
(V = 30 Vdc, I = 0)
CE
B
DC Current Gain (Note 1)
(V = 6.0 Vdc, I = 2.0 mAdc)
h
FE
−
2SA1162YT1
2SA1162GT1
120
200
240
400
CE
C
Collector−Emitter Saturation Voltage (I = 100 mAdc, I = 10 mAdc)
V
CE(sat)
−
0.3
Vdc
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
MHz
pF
T
(I = 1.0 mA, V = 10.0 V, f = 10 MHz)
80
−
−
C
CE
Output Capacitance
(V = 10 V, f = 1.0 MHz)
C
obo
7.0
10
CB
Noise Figure
(I = 0.1 mA, V = 6.0 Vdc, R = 10 kW, f = 1.0 kHz, BW = 200 Hz)
NF
dB
−
C
CE
S
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
http://onsemi.com
2
2SA1162GT1, 2SA1162YT1
INFORMATION FOR USING THE SC−59 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.094
2.4
0.039
1.0
0.031
0.8
inches
mm
SC−59 POWER DISSIPATION
The power dissipation of the SC−59 is a function of the
pad size. This can vary from the minimum pad size for sol-
dering to the pad size given for maximum power dissipa-
tion. Power dissipation for a surface mount device is deter-
the equation for an ambient temperature T of 25°C, one
can calculate the power dissipation of the device which in
this case is 338 milliwatts.
A
150°C − 25°C
370°C/W
mined by T
, the maximum rated junction temperature
J(max)
PD
=
= 338 milliwatts
of the die, Rq , the thermal resistance from the device
JA
junction to ambient; and the operating temperature, T . Us-
A
The 370°C/W assumes the use of the recommended foot-
print on a glass epoxy printed circuit board to achieve a
power dissipation of 338 milliwatts. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad . Using a board material such
as Thermal Clad, the power dissipation can be doubled us-
ing the same footprint.
ing the values provided on the data sheet, P can be calcu-
D
lated as follows.
TJ(max) − TA
PD
=
Rq
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are sub-
jected.
• Always preheat the device.
• The delta temperature between the preheat and solder-
ing should be 100°C or less.*
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the maxi-
mum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and re-
sult in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied dur-
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum tem-
perature ratings as shown on the data sheet. When us-
ing infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
ing cooling
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage
to the device.
http://onsemi.com
3
2SA1162GT1, 2SA1162YT1
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches.
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of con-
trol settings that will give the desired heat pattern. The op-
erator must set temperatures for several heating zones, and
a figure for belt speed. Taken together, these control set-
tings make up a heating “profile” for that particular circuit
board. On machines controlled by a computer, the comput-
er remembers these profiles from one operating session to
the next. Figure 1 shows a typical heating profile for use
when soldering a surface mount device to a printed circuit
board. This profile will vary among soldering systems but
it is a good starting point. Factors that can affect the profile
include the type of soldering system in use, density and
types of components on the board, type of solder used, and
the type of board or substrate material being used. This pro-
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177−189°C. When this type of furnace is used for solder re-
flow work, the circuit boards and solder joints tend to heat
first. The components on the board are then heated by con-
duction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then dis-
tributes this energy to the components. Because of this ef-
fect, the main body of a component may be up to 30 degrees
cooler than the adjacent solder joints.
file
shows
temperature
versus
time.
STEP 5
HEATING
ZONES 4 & 7
SPIKE"
STEP 6 STEP 7
VENT COOLING
STEP 1
STEP 2
VENT
STEP 3
HEATING
STEP 4
HEATING
ZONES 3 & 6
SOAK"
PREHEAT
ZONE 1
RAMP"
SOAK" ZONES 2 & 5
RAMP"
205° TO 219°C
PEAK AT
SOLDER JOINT
200°C
150°C
170°C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
160°C
150°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
140°C
100°C
MASS OF ASSEMBLY)
100°C
50°C
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
TIME (3 TO 7 MINUTES TOTAL)
T
MAX
Figure 1. Typical Solder Heating Profile
http://onsemi.com
4
2SA1162GT1, 2SA1162YT1
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE F
A
NOTES:
ꢀꢁ1. DIMENSIONING AND TOLERANCING PER ANSI
L
Y14.5M, 1982.
ꢀꢁ2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
3
S
B
A
B
C
D
G
H
J
2.70
1.30
1.00
0.35
1.70
0.013
0.09
0.20
1.25
2.50
3.10 0.1063 0.1220
1.70 0.0512 0.0669
1.30 0.0394 0.0511
0.50 0.0138 0.0196
2.10 0.0670 0.0826
0.100 0.0005 0.0040
0.18 0.0034 0.0070
0.60 0.0079 0.0236
1.65 0.0493 0.0649
3.00 0.0985 0.1181
2
1
D
G
K
L
S
J
C
STYLE 1:
PIN 1. EMITTER
2. BASE
K
3. COLLECTOR
H
http://onsemi.com
5
2SA1162GT1, 2SA1162YT1
Thermal Clad is a registered trademark of the Bergquist Company.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
2SA1162GT1/D
2SA1162GT1 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SA1162GT1/D | ETC | General Purpose Amplifier Transistors | 获取价格 |
|
| 2SA1162O | MCC | 150mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3 | 获取价格 |
|
| 2SA1162O(SOT-23) | JCST | Transistor | 获取价格 |
|
| 2SA1162OTE85L | TOSHIBA | TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal | 获取价格 |
|
| 2SA1162OTE85R | TOSHIBA | TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal | 获取价格 |
|
| 2SA1162S-Y,LF(D | TOSHIBA | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | 获取价格 |
|
| 2SA1162S-Y-LF | TOSHIBA | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) | 获取价格 |
|
| 2SA1162TE85R | TOSHIBA | TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal | 获取价格 |
|
| 2SA1162Y | MCC | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3 | 获取价格 |
|
| 2SA1162YT1 | ONSEMI | General Purpose Amplifier Transistors | 获取价格 |
|
2SA1162GT1 相关文章
Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
- 2024-09-20
- 6
Bourns 精密环境传感器产品选型手册(英文版)
- 2024-09-20
- 9
Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
- 2024-09-20
- 8
Bourns GMOV 混合过压保护组件产品选型手册(英文版)
- 2024-09-20
- 6
