2SA1768S-AN [ONSEMI]
双极晶体管，-180V，-160A，低饱和压，PNP 单 NMP;
| 型号： | 2SA1768S-AN |
| 厂家： | 
ONSEMI |
| 描述： | 双极晶体管，-180V，-160A，低饱和压，PNP 单 NMP 晶体管 |
| 文件： | 总7页 (文件大小：577K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN3582A
2SA1768
Bipolar Transistor
http://onsemi.com
–
–
(
)
sat PNP Single NMP
180V, 160A, Low V
CE
Applicaitons
•
Color TV sound output, converter, inverter
Features
•
•
•
Adoption of MBIT process
High breakdown voltage, large current capacity
Fast switching speed
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
--180
--160
-- 6
Unit
V
V
CBO
V
V
CEO
V
V
EBO
I
C
--0.7
A
Collector Current (Pulse)
Collector Dissipation
I
--1.5
A
CP
P
1
W
C
Junction Temperature
Storage Temperature
Tj
150
C
C
°
°
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package : NMP(Taping)
7540-001
•
•
JEITA, JEDEC : SC-71
Minimum Packing Quantity : 2,500 pcs./box
2.5
2SA1768S-AN
2SA1768T-AN
6.9
1.45
1.05
Marking(NMP(Taping))
A1768
RANK
LOT No.
0.6
0.5
0.9
1
2
3
0.45
Electrical Connection
2
1 : Emitter
2 : Collector
3 : Base
3
2.54
2.54
NMP(Taping)
1
Semiconductor Components Industries, LLC, 2013
August, 2013
82212 TKIM TC-00002804/90503TN (KT)/83098HA (KT)/5110MO, TS No.3582-1/7
2SA1768
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
--0.1
Collector Cutoff Current
Emitter Cutoff Current
I
V
=--120V, I =0A
A
A
μ
CBO
CB E
I
V
=--4V, I =0A
--0.1
μ
EBO
EB C
h
h
1
2
V
=--5V, I =--100mA
140*
400*
FE
FE
CE
C
DC Current Gain
V
CE
=--5V, I =--10mA
90
C
Gain-Bandwidth Product
Output Capacitance
f
V
=--10V, I =--50mA
120
11
MHz
pF
V
T
CE C
Cob
V
CB
=--10V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V
(sat)
(sat)
--0.2
--0.85
--0.5
--1.2
CE
I
C
=--250mA, I =--25mA
B
V
V
BE
V
I
C
=--10 A, I =0A
--180
--160
--6
V
μ
(BR)CBO
E
V
I
C
=--1mA, R
=
V
∞
(BR)CEO
BE
V
I =--10 A, I =0A
E
V
μ
(BR)EBO
C
t
t
t
60
900
60
ns
ns
ns
on
Storage Time
See specified Test Circuit.
stg
f
Fall Time
* : The 2SA1768 is classified by 100mA h
as follows :
T
FE
Rank
S
h
140 to 280
200 to 400
FE
Switching Time Test Circuit
2SA1768
I
B1
I
B2
OUTPUT
INPUT
PW=20μs
D.C.≤1%
R
+
B
V
R
R
L
+
50Ω
100μF
470μF
V
BE
=5V
V
CC
= --100V
I
C
=20I = --20I = --300mA
B1 B2
Ordering Information
Device
Package
Shipping
memo
2SA1768S-AN
NMP(Taping)
NMP(Taping)
2,500pcs./box
2,500pcs./box
Pb Free
2SA1768T-AN
No.3582-2/7
2SA1768
I
-- V
I
-- V
C
CE
C CE
--800
--700
--800
--700
From top
--200mA
--180mA
--160mA
--140mA
--600
--500
--400
--300
--200
--600
--500
--400
--300
--200
--1.5mA
--1.0mA
--0.5mA
--100
0
--100
0
I =0
I =0
B
B
0
--200
--400
--600
--800
--1000
0
--10
--20
--30
--40
--50
--60
--70
--80
Collector-to-Emitter Voltage, V
CE
-- V
Collector-to-Emitter Voltage, V
CE
-- mV IT04536
IT04538
I
-- V
h
-- I
C
BE
FE
C
5
--1000
--800
--600
--400
V
=--5V
V
=--5V
CE
CE
Ta=75°C
3
2
--25°C
25°C
100
7
5
3
2
--200
0
10
7
5
2
3
5
7
2
3
5
7
2
3
5 7
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.0
--10
--100
--1000
IT04542
IT04540
Base-to-Emitter Voltage, V
BE
-- V
Collector Current, I -- mA
C
V
(sat) -- I
f
-- I
CE
C
T
C
2
5
I
/ I =10
B
C
3
2
--1000
7
5
V
=--10V
CE
--5V
100
3
2
7
5
--100
3
2
7
5
3
10
2
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
--1000
--10
--100
--1000
--1.0
--10
--100
IT04546
Collector Current, I -- mA
IT04544
Collector Current, I -- mA
C
C
V
(sat) -- I
Cob -- V
CB
BE
C
--10
100
f=1MHz
I
/ I =10
B
C
7
5
7
5
3
2
3
2
10
7
5
--1.0
7
5
3
2
25°C
3
2
1.0
--1.0
2
3
5
7
2
3
5
7
2
2
3
5
7
2
3
5
7
2
3
5 7
--10
--100
-- V
IT04550
--1.0
--10
--100
--1000
IT04548
Collector Current, I -- mA
Collector-to-Base Voltage, V
CB
C
No.3582-3/7
2SA1768
P
-- Ta
A S O
C
1.2
1.0
0.8
0.6
0.4
3
2
I
= --1.5A
CP
--1.0
7
5
I = --0.7A
C
3
2
--0.1
7
5
3
2
--0.01
0.2
0
7
5
Ta=25°C
Single Pulse
3
--1.0
2
3
5
7
2
3
5
7
2
3
0
20
40
60
80
100
120
140
160
--10
--100
Collector-to-Emitter Voltage, V
CE
-- V
Ambient Temperature, Ta -- °C
IT04551
IT04552
No.3582-4/7
2SA1768
Bag Packing Specification
2SA1768S-AN, 2SA1768T-AN
No.3582-5/7
2SA1768
Outline Drawing
2SA1768S-AN, 2SA1768T-AN
Mass (g) Unit
0.275
mm
* For reference
No.3582-6/7
2SA1768
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
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performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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PS No.3582-7/7
相关型号：
2SA1768T-AN
Bipolar Transistor, -180V, -160A, Low VCE(sat) PNP Single NMP, NMP (Taping), 2500-REEL
ONSEMI
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