2SA1943RTU [ONSEMI]
PNP外延硅晶体管;
| 型号： | 2SA1943RTU |
| 厂家： | 
ONSEMI |
| 描述： | PNP外延硅晶体管 局域网 放大器 PC 晶体管 |
| 文件： | 总7页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
January 2009
2SA1943/FJL4215
PNP Epitaxial Silicon Transistor
Applications
•
•
High-Fidelity Audio Output Amplifier
General Purpose Power Amplifier
Features
•
•
•
•
•
•
•
•
•
High Current Capability: IC = -17A.
High Power Dissipation : 150watts.
High Frequency : 30MHz.
High Voltage : VCEO= -250V
Wide S.O.A for reliable operation.
Excellent Gain Linearity for low THD.
Complement to 2SC5200/FJL4315.
Full thermal and electrical Spice models are available.
Same transistor is also available in:
-- TO3P package, 2SA1962/FJA4213 : 130 watts
-- TO220 package, FJP1943 : 80 watts
-- TO220F package, FJPF1943 : 50 watts
TO-264
1.Base 2.Collector 3.Emitter
1
Absolute Maximum Ratings*
T = 25°C unless otherwise noted
a
Symbol
Parameter
Ratings
-250
-250
-5
Units
BVCBO
BVCEO
BVEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
A
A
-17
IB
Base Current
-1.5
PD
Total Device Dissipation(TC=25°C)
Derate above 25°C
150
1.04
W
W/°C
TJ, TSTG
Junction and Storage Temperature
- 50 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* T =25°C unless otherwise noted
a
Symbol
Parameter
Max.
Units
RθJC
Thermal Resistance, Junction to Case
0.83
°C/W
* Device mounted on minimum pad size
h
Classification
FE
Classification
R
O
hFE1
55 ~ 110
80 ~ 160
© 2009 Fairchild Semiconductor Corporation
2SA1943/FJL4215 Rev. C
www.fairchildsemi.com
1
Electrical Characteristics* T =25°C unless otherwise noted
a
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Test Condition
IC=-5mA, IE=0
Min. Typ. Max. Units
-250
-250
-5
V
V
IC=-10mA, RBE=∞
IE=-5mA, IC=0
V
VCB=-230V, IE=0
VEB=-5V, IC=0
-5.0
-5.0
160
µA
µA
IEBO
Emitter Cut-off Current
hFE1
DC Current Gain
VCE=-5V, IC=-1A
VCE=-5V, IC=-7A
IC=-8A, IB=-0.8A
VCE=-5V, IC=-7A
VCE=-5V, IC=-1A
VCB=-10V, f=1MHz
55
35
hFE2
DC Current Gain
60
-0.4
-1.0
30
VCE(sat)
VBE(on)
fT
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
-3.0
-1.5
V
V
Current Gain Bandwidth Product
Output Capacitance
MHz
pF
Cob
360
* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%
Ordering Information
Part Number
2SA1943RTU
2SA1943OTU
FJL4215RTU
FJL4215OTU
Marking
A1943R
A1943O
J4215R
Package
TO-264
Packing Method
Remarks
hFE1 R grade
hFE1 O grade
hFE1 R grade
hFE1 O grade
TUBE
TUBE
TUBE
TUBE
TO-264
TO-264
J4215O
TO-264
© 2009 Fairchild Semiconductor Corporation
2SA1943/FJL4215 Rev. C
www.fairchildsemi.com
2
Typical Characteristics
-20
IB = -900mA
IB = -800mA
IB = -1A
VCE = -5V
Tj = 125oC
-18
-16
-14
-12
-10
-8
IB = -700mA
Tj = 25oC
100
10
1
IB = -300mA
Tj = -25oC
IB = -200mA
IB = -100mA
-6
-4
-2
-0
-2
-4
-6
-8
-10
0.1
1
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain ( R Grade )
10000
1000
100
Tj = 125oC
Ic=-10Ib
Tj = 25oC
VCE = -5V
100
10
1
Tj = -25oC
Tj=25oC
Tj=125oC
Tj=-25oC
10
0.1
0.1
1
10
1
10
IC[A], COLLECTOR CURRENT
Ic[A], COLLECTORCURRENT
Figure 3. DC current Gain ( O Grade )
Figure 4. Collector-Emitter Saturation Voltage
14
10000
1000
100
Ic=-10Ib
12
VCE = 5V
10
8
Tj=-25oC
Tj=25oC
6
4
Tj=125oC
2
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0.1
1
10
VBE[V], BASE-EMITTER VOLTAGE
Ic[A], COLLECTORCURRENT
Figure 5. Base-Emitter Saturation Voltage
Figure 6. Base-Emitter On Voltage
© 2009 Fairchild Semiconductor Corporation
2SA1943/FJL4215 Rev. C
www.fairchildsemi.com
3
Typical Characteristics
100
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
IC MAX. (Pulsed*)
IC MAX. (DC)
10ms*
100ms*
DC
1
0.1
0.01
*SINGLE NONREPETITIVE
PULSE TC=25[oC]
1
10
100
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
Pulse duration [sec]
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Thermal Resistance
Figure 8. Safe Operating Area
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 9. Power Derating
© 2009 Fairchild Semiconductor Corporation
2SA1943/FJL4215 Rev. C
www.fairchildsemi.com
4
18.30
17.70
5.20
4.80
20.20
19.80
A
16.60
B
7.40
7.00
1.00
R2.00
2.00
12.00
6.20
5.80
3.50
3.10
C
C
0.254
A
B
1.20
0.80
9.10
8.90
21.62
21.02
C
0.50
20.20
19.80
C
R1.00
1.70
1.30
1.50
4.05
2.60
2.40
3.20
2.80
C
1.50
1.50
3.10
2.50
C
2.70
2.30
20.50
19.50
C
C
2X
1.25
0.90
C
M
0.254
A
B
0.85
0.50
5.75
5.15
5.75
5.15
C
FRONT VIEW
SIDE VIEW
BACK VIEW
3.70
3.30
5.20
4.80
0.15
BOTTOM VIEW
NOTES:
A. PACKAGE REFERENCE: JEDEC TO264
VARIATION AA.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C
OUT OF JEDEC STANDARD VALUE.
D. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
E. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
F. THIS PACKAGE IS INTENDED ONLY FOR
"FS PKG CODE AR"
G. DRAWING FILE NAME: TO264A03REV2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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