2SB1215RTP-FA
更新时间:2024-09-19 04:50:11
品牌:ONSEMI
描述:Small Signal Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 4 PIN
2SB1215RTP-FA 概述
Small Signal Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 4 PIN
2SB1215RTP-FA 数据手册
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PDF下载Ordering number:ENN2539B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1215/2SD1815
High-Current Switching Applications
Applications
Package Dimensions
unit:mm
· Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
2045B
[2SB1215/2SD1815]
6.5
Features
2.3
5.0
0.5
4
· Low collector-to-emitter saturation voltage.
· Excllent linearity of h
.
FE
· Small-sized package permitting 2SB1215/2SD1815-
applied sets to be made small and slim.
0.85
0.7
· High f .
T
1.2
· Fast switching time.
0.6
0.5
1 : Base
1
2
3
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
2.3
2.3
unit:mm
2044B
[2SB1215/2SD1815]
6.5
2.3
5.0
0.5
4
0.5
0.85
1
2
3
0.6
1.2
1 : Base
0 to 0.2
2 : Collector
3 : Emitter
2.3
2.3
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2503TN (KT)/92098HA (KT)/40196TS (KOTO) 8-9913/8229MO/4097TA, TS No.2539–1/5
2SB1215/2SD1815
( ) : 2SB1215
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
V
V
V
(–)120
(–)100
(–)6
(–)3
(–)6
1
V
V
CBO
CEO
EBO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
I
A
C
Collector Current (Pulse)
I
A
CP
W
W
˚C
˚C
Collector Dissipation
P
C
Tc=25˚C
20
Junction Temperature
Storage Temperature
Tj
150
Tstg
–55 to +150
Electrical Characteristics at Ta = 25˚C
Ratings
Parameter
Symbol
Conditions
Unit
min
typ
max
(–)1
Collector Cutoff Current
I
V
=(–)100V, I =0
µA
µA
CBO
CB
EB
CE
CE
E
Emitter Cutoff Current
DC Current Gain
I
V
V
V
=(–)4V, I =0
(–)1
EBO
C
h
h
1
=(–)5V, I =(–)0.5A
70*
400*
FE
FE
C
2
=(–)5V, I =(–)2A
40
C
(130)
180
MHz
MHz
pF
mV
mV
V
Gain-Bandwidth Product
f
V
V
I
=(–)10V, I =(–)0.5A
T
CE
C
Output Capacitance
C
=(–)10V, f=1MHz
(40)25
150
ob
CB
400
Collector-to-Emitter Saturation Voltage
V
V
=(–)1.5A, I =(–)0.15A
CE(sat)
C
B
(–200) (–500)
(–)0.9 (–)1.2
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
I
I
I
I
=(–)1.5A, I =(–)0.15A
BE(sat)
C
C
C
B
V
V
V
=(–)10µA, I =0
(–)120
(–)100
(–)6
V
(BR)CBO
(BR)CEO
(BR)EBO
E
=(–)1mA, R =∞
V
BE
=(–)10µA, I =0
V
E
C
t
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
100
(800)
900
ns
on
ns
Storage Time
Fall Time
t
stg
ns
t
f
50
ns
* : The 2SB1215/2SD1815 are classified by 100mA h as follows :
FE
Rank
Q
R
S
T
h
70 to 140
100 to 200 140 to 280 200 to 400
FE
Switching Time Test Circuit
I
B1
PW=20µs
D.C.≤1%
OUTPUT
I
B2
INPUT
R
B
V
R
50Ω
+
+
100µF
470µF
V
= --5V
V
=50V
CC
BE
I =10I = --10I =1.5A
B1 B2
C
(For PNP, the polarity is reversed.)
No.2539–2/5
2SB1215/2SD1815
I
-- V
I
-- V
CE
C
CE
C
2.0
--2.0
--1.6
--1.2
--0.8
2SB1215
2SD1815
1.6
1.2
0.8
2mA
--0.4
0
0.4
0
I =0
B
--4
I =0
B
3
0
--1
--2
--3
--5
ITR09233
0
1
2
4
5
Collector-to-Emitter Voltage, V
CE
– V
Collector-to-Emitter Voltage, V
CE
– V
ITR09234
I
-- V
I
-- V
C CE
C
CE
--1.0
--0.8
--0.6
--0.4
1.0
0.8
0.6
0.4
2SB1215
2SD1815
--0.2
0
0.2
0
0.5mA
I =0
B
I =0
B
0
--10
--20
--30
--40
--50
ITR09235
0
10
20
30
40
50
Collector-to-Emitter Voltage, V – V
CE ITR09236
Collector-to-Emitter Voltage, V
CE
– V
I
-- V
I
-- V
BE
C
BE
C
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
3.5
3.0
2.5
2.0
1.5
1.0
2SB1215
= --5V
2SD1815
V =5V
CE
V
CE
--0.5
0
0.5
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
– V
--1.2
ITR09237
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR09238
Base-to-Emitter Voltage, V
BE
Base-to-Emitter Voltage, V – V
BE
h
FE
-- I
h
FE
-- I
C
C
1000
5
1000
2SB1215
2SD1815
=5V
7
5
V
= --5V
V
CE
CE
Ta=75°C
25°C
3
2
3
2
--25°C
100
7
100
5
5
3
2
3
2
10
10
5
7
5
5
2
3
5
2
3
5
2
3
5
5
2
3
5
2
3
5
2
3
5
--1.0
--10
ITR09239
1.0
10
ITR09240
--0.01
--0.1
0.01
0.1
Collector Current, I – A
Collector Current, I – A
C
C
No.2539–3/5
2SB1215/2SD1815
f
-- I
Cob -- V
CB
T
C
5
2
2SB1215 / 2SD1815
=10V
2SB1215 / 2SD1815
f=1MHz
V
CE
3
2
100
7
5
100
7
5
3
2
3
2
10
7
(For PNP, minus sign is omitted.)
(For PNP, minus sign is omitted.)
10
5
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
100
0.1
1.0
1.0
10
Collector Current, I – A
Collector-to-Base Voltage, V
-- V
ITR09241
ITR09242
C
CB
V
(sat) -- I
V
(sat) -- I
CE C
CE
C
5
5
2SB1215
2SD1815
3
2
3
2
I
C
/ I =10
B
I
C
/ I =10
B
--1000
1000
7
5
5
3
2
3
2
--100
100
25°C
7
5
5
3
2
Ta=75
--25
°C
3
2
°C
C
Ta=75°
10
--10
5
5
2
2
3
5
2
3
5
2
3
5
5
5
0
2
3
5
2
3
5
2
3
5
--10
ITR09243
10
ITR09244
--0.01
--0.1
0.01
0.1
Collector Current, I –--1A.0
Collector Current, I –1.A0
C
C
V
(sat) -- I
V
(sat) -- I
BE
BE
C
C
--10
10
2SB1215
/ I =10
2SD1815
I
7
7
I
/ I =10
C
B
C
B
5
5
3
2
3
2
25°C
25°C
--1.0
1.0
7
5
7
5
3
2
3
2
2
3
5
2
3
5
2
3
5
2
3
5
2
3
5
2
3
5
--1.0
--0.01
--0.1
0.01
1.0
Collector0C.1urrent, I – A
Collector Current, I – A
ITR09245
C
ITR09246
C
A S O
P
-- Ta
C
10
1.2
1.0
0.8
0.6
0.4
I
=6A
CP
2SB1215 / 2SD1815
2SB1215 / 2SD1815
5
3
2
I =3A
C
1.0
5
3
2
0.1
5
3
2
0.2
0
Tc=25°C
Single pulse
(For PNP, minus sign is omitted.)
0.01
5
20
40
60
80
100
120
140
160
3
5
2
3
5
2
3
5
2
1.0
10
100
Collector-to-Emitter Voltage, V
– V
Ambient Temperature, Ta – ˚C
ITR09247
ITR09248
CE
No.2539–4/5
2SB1215/2SD1815
P
-- Tc
C
24
20
16
12
8
2SB1215 / 2SD1815
4
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc – ˚C
ITR09249
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2003. Specifications and information herein are subject
to change without notice.
PS No.2539–5/5
2SB1215RTP-FA 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
2SB1215S | ETC | TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 3A I(C) | TO-252 | 获取价格 | |
2SB1215S(TP) | ONSEMI | TRANSISTOR,BJT,PNP,100V V(BR)CEO,3A I(C),TO-251VAR | 获取价格 | |
2SB1215S-E | SANYO | High-Current Switching Applications | 获取价格 | |
2SB1215S-E | ONSEMI | Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA | 获取价格 | |
2SB1215S-H | SANYO | High-Current Switching Applications | 获取价格 | |
2SB1215S-H | ONSEMI | Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA | 获取价格 | |
2SB1215S-TL-E | SANYO | High-Current Switching Applications | 获取价格 | |
2SB1215S-TL-E | ONSEMI | Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA | 获取价格 | |
2SB1215S-TL-H | SANYO | High-Current Switching Applications | 获取价格 | |
2SB1215S-TL-H | ONSEMI | Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA | 获取价格 |
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