2SC2812N6-CPA-TB-E [ONSEMI]
双极晶体管，(-)50V，(-)150mA，低饱和压，(PNP)NPN 单 CPA;
| 型号： | 2SC2812N6-CPA-TB-E |
| 厂家： | 
ONSEMI |
| 描述： | 双极晶体管，(-)50V，(-)150mA，低饱和压，(PNP)NPN 单 CPA 晶体管 |
| 文件： | 总7页 (文件大小：412K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN7198B
2SA1179N/2SC2812N
Bipolar Transistor
http://onsemi.com
(–)
(–)
(
) (
)
50V,
150mA, Low V
CE
sat , PNP NPN Single CPA
Features
•
Miniature package facilitates miniaturization in end products
High breakdown voltage
•
( ) : 2SA1179N
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
(--)55
Unit
V
V
CBO
V
(--)50
V
CEO
V
(--)5
V
EBO
I
C
(--)150
(--)300
(--)30
mA
mA
mA
mW
Collector Current (Pulse)
Base Current
I
CP
I
B
Collector Dissipation
Junction Temperature
Storage Temperature
P
200
C
Tj
150
C
°
°
Tstg
--55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: CPA
7053-001
• JEITA, JEDEC
: SC-59, TO-236, SOT-23,
TO-236AB
0.45
0.13
•
Minimum Packing Quantity : 3,000 pcs./reel
2SA1179N6-TB-E
2SA1179N6-CPA-TB-E
2SC2812N6-TB-E
2SC2812N6-CPA-TB-E
3
Packing Type: TB
0 to 0.1
2
1
TB
0.95
1.9
2.93
1.3 MAX
Marking
1 : Base
2 : Emitter
3 : Collector
M
L
CPA
2SA1179N
2SC2812N
Semiconductor Components Industries, LLC, 2013
August, 2013
91912 TKIM/92006 MSIM TC-00000143,00000144/72602 TSIM TA-2636, 2637 No.7198-1/7
2SA1179N / 2SC2812N
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
(--)0.1
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
V
=(--)35V, I =0A
A
A
μ
CBO
CB E
I
V
=(--)4V, I =0A
(--)0.1
400
μ
EBO
EB C
h
V
CE
=(--)6V, I =(--)1mA
200
FE
C
2SC2812N : V =6V, I =1mA
100
(180)
MHz
MHz
pF
V
CE
C
Gain-Bandwidth Product
f
T
2SA1179N : V =--6V, I =--10mA
CE
C
Output Capacitance
Cob
V
CB
=(--)6V, f=1MHz
(4.0)3.0
(--0.15)0.1
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
V
CE
(sat)
(sat)
I
C
=(--)50mA, I =(--)5mA
(--)0.5
(--)1.0
B
V
BE
I
C
=(--)50mA, I =(--)5mA
V
B
V
I
C
=(--)10 A, I =0A
(--)55
(--)50
(--)5
V
μ
(BR)CBO
E
V
I
C
=(--)1mA, R
=
V
∞
(BR)CEO
BE
V
I =(--)10 A, I =0A
V
μ
(BR)EBO
E
C
: The 2SA1179N / 2SC2812N are classified by 1mA h as follws :
*
FE
Rank
6
h
200 to 400
FE
Ordering Information
Device
Package
CPA
Shipping
memo
2SA1179N6-TB-E
3,000pcs./reel
3,000pcs./reel
3,000pcs./reel
3,000pcs./reel
2SA1179N6-CPA-TB-E
2SC2812N6-TB-E
CPA
Pb Free
CPA
2SC2812N6-CPA-TB-E
CPA
I
C
-- V
CE
I
-- V
C CE
20
16
12
8
--16
--12
--8
2SA1179N
2SC2812N
--4
0
4
10μA
--5μA
I =0μA
5μA
B
I =0μA
B
0
0
0
10
20
30
40
50
--10
--20
--30
--40
--50
Collector-to-Emitter Voltage, V
CE
-- V IT04195
Collector-to-Emitter Voltage, V
CE
-- V IT04196
I
C
-- V
I
C
-- V
BE
BE
--240
--200
240
200
160
120
80
2SA1179N
2SC2812N
V
= --6V
V
=6V
CE
CE
--160
--120
--80
40
--40
0
0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT04197
0.2
0.4
0.6
0.8
1.0
1.2
IT04198
Base-to-Emitter Voltage, V
BE
-- V
Base-to-Emitter Voltage, V -- V
BE
No.7198-2/7
2SA1179N / 2SC2812N
h
FE
-- I
h
-- I
C
C
FE
1000
1000
2SA1179N
2SC2812N
V
= --6V
V
=6V
7
CE
CE
7
5
5
Ta=75°C
Ta=75°C
25°C
3
2
25°C
--25°C
--25°C
3
2
100
7
100
0.1
5
--0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
2
3
5 7
2
3
5 7
2
3
5 7
100
2
3
--1.0
--10
--100
1.0
10
Collector Current, I -- mA
IT04199
Collector Current, I -- mA
IT04200
C
C
f
-- IC
f
-- IC
T
T
7
5
7
2SA1179N
2SC2812N
5
V
= --6V
V
=6V
CE
CE
3
2
3
2
100
100
7
5
7
5
3
--1.0
3
1.0
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
2
3
--10
--100
10
100
Collector Current, I -- mA
IT04201
Collector Current, I -- mA
IT04202
C
C
Cob -- V
CB
Cob -- V
CB
2
2
2SC2812N
f=1MHz
2SA1179N
f=1MHz
10
10
7
5
7
5
3
2
3
2
1.0
1.0
7
5
7
5
7
2
3
5
7
2
3
5
7
5
7
2
3
5
7
2
3
5
7
--1.0
--10
--100
IT04203
1.0
10
100
Collector-to-Base Voltage, V
-- V
Collector-to-Base Voltage, V
-- V IT04204
CB
CB
V
(sat) -- I
V
(sat) -- I
CE C
CE
C
5
5
2SA1179N
/ I = --10
2SC2812N
I / I =10
C B
I
C
B
3
2
3
2
0.1
--0.1
7
5
7
5
3
2
3
2
0.01
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
2
3
5
--1.0
--10
--100
1.0
10
100
IT04205
Collector Current, I -- mA
IT04206
Collector Current, I -- mA
C
C
No.7198-3/7
2SA1179N / 2SC2812N
A S O
P
-- Ta
C
250
7
5
I
=0.3A
10μs
CP
3
2
I =0.15A
C
200
150
100
50
0.1
7
5
3
2
0.01
7
5
3
2
Ta=25°C
Mounted on a glass epoxy board (20✕30✕1.6mm)
For PNP, the minus sign is omitted.
0.001
0.1
0
2
3
5
7
2
3
5
7
2
3
5
7
0
20
40
60
80
100
120
140
160
1.0
10
100
IT04207
Collector-to-Emitter Voltage, V
CE
-- V
IT04208
Ambient Temperature, Ta -- °C
No.7198-4/7
2SA1179N / 2SC2812N
Embossed Taping Specification
2SA1179N6-TB-E, 2SA1179N6-CPA-TB-E, 2SC2812N6-TB-E, 2SC2812N6-CPA-TB-E
No.7198-5/7
2SA1179N / 2SC2812N
Outline Drawing
Land Pattern Example
2SA1179N6-TB-E, 2SA1179N6-CPA-TB-E, 2SC2812N6-TB-E, 2SC2812N6-CPA-TB-E
Mass (g) Unit
Unit: mm
0.013
mm
* For reference
0.8
0.95
0.95
No.7198-6/7
2SA1179N / 2SC2812N
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PS No.7198-7/7
相关型号：
2SC2812N6-TB-E
Bipolar Transistor, (-)50V, (-)150mA, Low VCE(sat), (PNP)NPN Single CPA, SC-59 / CP, 3000-REEL
ONSEMI
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