2SC3648S-TD-E [ONSEMI]
双极晶体管，160V，0.7A，低饱和压，(PNP)NPN 单 PCP;
| 型号： | 2SC3648S-TD-E |
| 厂家： | 
ONSEMI |
| 描述： | 双极晶体管，160V，0.7A，低饱和压，(PNP)NPN 单 PCP PC 小信号双极晶体管 |
| 文件： | 总5页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN1788B
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching,
Preriver Applications
2SA1418 / 2SC3648
Applications
•
Color TV audio output, inverter.
Features
•
Adoption of FBET, MBIT processes.
•
High breakdown voltage and large current capacity.
•
Fast switching speed.
•
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications ( ) : 2SA1418
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
V
V
(--)180
(--)160
(--)6
CBO
CEO
EBO
V
V
I
(--)0.7
(--)1.5
500
A
C
Collector Current (Pulse)
I
A
CP
mW
W
°C
°C
Collector Dissipation
P
C
Mounted on a ceramic board (250mm2✕0.8mm)
1.3
Junction Temperature
Storage Temperature
Marking 2SA1418 : AD
2SC3648 : CD
Tj
150
Tstg
--55 to +150
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Publication Order Number:
www.onsemi.com
2SA1418_2SC3648/D
2SA1418 / 2SC3648
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Collector Cutoff Current
Emitter Cutoff Current
I
I
V
V
V
V
V
V
=(--)120V, I =0A
(--)0.1
(--)0.1
400*
µA
µA
CBO
EBO
CB
EB
CE
CE
CE
CB
E
=(--)4V, I =0A
C
h
h
1
=(--)5V, I =(--)100mA
100*
90
FE
FE
C
DC Current Gain
2
=(--)5V, I =(--)10mA
C
Gain-Bandwidth Product
Output Capacitance
f
=(--)10V, I =(--)50mA
C
120
MHz
pF
V
T
Cob
=(--)10V, f=1MHz
(11)8
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V
V
V
V
V
(sat)
I
I
I
I
=(--)250mA, I =(--)25mA
(--0.2)0.12 (--0.5)0.4
CE
BE
C
C
C
C
B
(sat)
=(--)250mA, I =(--)25mA
(--)0.85
(--)1.2
V
B
=(--)10µA, I =0A
(--)180
(--)160
(--)6
V
(BR)CBO
(BR)CEO
(BR)EBO
E
=(--)1mA, R =∞
BE
V
I =(--)10µA, I =0A
E
V
C
t
t
t
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
(60)50
(900)1000
(60)60
ns
ns
ns
on
Storage Time
stg
f
Fall Time
*: The 2SA1418 / 2SC3648 are classified by 100mA h as follows:
FE
Rank
R
S
T
h
100 to 200
140 to 280
200 to 400
FE
Package Dimensions
unit : mm (typ)
Switching Time Test Circuit
7007B-004
I
B1
PW=20µs
D.C.≤1%
I
B2
INPUT
R
B
V
333Ω
R
50Ω
+
+
100µF
470µF
--5V
100V
I =20I =--20I =300mA
B1 B2
C
(For PNP, the polarity is reversed)
Rev.0 I Page 2 of 5 I www.onsemi.com
2SA1418 / 2SC3648
I
-- V
I
-- V
C CE
C
CE
--800
--700
--600
--500
--400
--300
--200
--100
0
800
From top
--200mA
--180mA
--160mA
--140mA
2SA1418
2SC3648
From top
mA
--120
100mA
90mA
80mA
700
600
500
400
300
200
100
0
70mA
60mA
I =0mA
B
I =0mA
B
600
0
--200
--400
--600
--800
--1000
ITR03558
0
0
3
3
200
400
800
1000
Collector-to-Emitter Voltage, V -- mV
ITR03559
CE
Collector-to-Emitter Voltage, V
-- mV
CE
I
-- V
I
-- V
C CE
C
CE
--800
--700
--600
--500
--400
--300
--200
--100
0
1000
800
600
400
200
0
2SA1418
2SC3648
--2.0mA
--1.0mA
--0.5mA
1.0mA
0.5mA
I =0mA
I =0mA
B
B
0
--10
--20
--30
--40
--50
--60
--70
--80
10
20
30
40
50
60
70
80
ITR03560
ITR03561
Collector-to-Emitter Voltage, V -- V
CE
Collector-to-Emitter Voltage, V
CE
-- V
V
(sat) -- I
I
-- V
CE
C
C
BE
1000
800
600
400
200
0
10
7
2SA1418 / 2SC3648
=5V
2SA1418 / 2SC3648
I
V
I
5
CE
For PNP, minus sign is omitted
C / B=10
3
2
1.0
7
5
3
2
0.1
7
5
3
2
For PNP, minus sign is omitted
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR03562
5
7
2
3
5
7
2
3
5
7
2
10
100
1000
ITR03563
Collector Current, I -- mA
Base-to-Emitter Voltage, V
-- V
C
BE
h
-- I
h
-- I
FE
C
FE
C
1000
7
1000
2SC3648
Pulse
2SA1418
Pulse
7
5
5
3
2
3
2
100
100
7
7
5
5
3
2
3
2
10
10
7
7
5
5
3
3
3
5
7
2
3
5
2
3
5
2
5
7
2
3
5
7
2
3
5
7
2
--10
7 --100
7--1000
ITR03564
10
100
1000
Collector Current, I -- mA
Collector Current, I -- mA
C
ITR03565
C
Rev.0 I Page 3 of 5 I www.onsemi.com
2SA1418 / 2SC3648
f
-- I
f
-- I
C
T
C
T
5
5
2SA1418
2SC3648
3
2
3
2
100
100
7
5
7
5
3
2
3
2
10
10
5
7
2
3
5
7
2
3
5
7
5
7
2
3
5
7
2
3
5
7
--10
--100
--1000
ITR03566
10
100
1000
ITR03567
Collector Current, I -- mA
Collector Current, I -- mA
Cob -- V C
C
A S O
CB
3
2
100
2SA1418 / 2SC3648
f=1MHz
2SA1418 / 2SC3648
I
=1.5A
7
CP
5
1.0
I =0.7
C
A
7
5
3
2
3
2
10
0.1
7
5
7
5
3
2
3
2
Ta=25
Single pulse
Mounted on a ceramic board (250mm2✕0.8mm)
°C
0.01
7
5
1.0
For PNP, minus sign is omitted
For PNP, minus sign is omitted
1.0
2
3
5
7
2
3
5
7
2
2
3
5
7
2
3
5
7
2
3
1.0
10
100
-- V ITR03568
10
100
-- V
Collector-to-Base Voltage, V
Collector-to-Emitter Voltage, V
ITR03570
CB
CE
P
-- Ta
C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
ITR03569
Rev.0 I Page 4 of 5 I www.onsemi.com
2SA1418 / 2SC3648
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the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. SCILLC strives to supply
high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or malfunctions. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications
can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer’s
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2SA1418_2SC3648/D
相关型号：
2SC3648T-TD-E
Bipolar Transistor, 160V, 0.7A, Low VCE(sat), (PNP)NPN Single PCP hFE = 200-400, SOT-89 / PCP-1, 1000-REEL
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