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元器件品牌
2SC3651-TD-E
[ONSEMI]
TRANSISTOR,BJT,NPN,100V V(BR)CEO,200MA I(C),SOT-89;
元器件型号：
2SC3651-TD-E
生产厂家：
ON SEMICONDUCTOR
描述和应用：
TRANSISTOR,BJT,NPN,100V V(BR)CEO,200MA I(C),SOT-89
PDF文件：
总4页 (文件大小：119K)
下载文档：
下载PDF数据表文档文件
型号参数：2SC3651-TD-E参数
查看货源
2SC3652
SILICON NPN EPITAXIAL HIGH FREQUENCY AMPLIFIER
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156
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67
HITACHI
2SC3652
Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-126MOD, 3 PIN
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156
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0
RENESAS
2SC3653
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156
-
18
ETC
2SC3653
PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS
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23
SANYO
2SC3654
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92
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20
ETC
2SC3655
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92
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35
ETC
2SC3656
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92
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30
ETC
2SC3657
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)
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121
TOSHIBA
2SC3657
isc Silicon NPN Power Transistor
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18
ISC
2SC3657
Silicon NPN Power Transistor
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156
-
14
ISC
2SC3657K
暂无描述
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156
-
0
ISC
2SC3657L
Transistor
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156
-
0
ISC
2SC3657M
Transistor
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0
ISC
2SC3657M
Transistor
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156
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0
ISC
2SC3658
Silicon NPN Power Transistors
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156
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4
JMNIC
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