2SC5231A-8 [ONSEMI]
RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SMALL, SMCP, 3 PIN;
| 型号： | 2SC5231A-8 |
| 厂家： | 
ONSEMI |
| 描述： | RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SMALL, SMCP, 3 PIN |
| 文件： | 总6页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1077
SANYO Sem iconductors
DATA S HEET
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Wide-Band Low-Noise
Amplifier Applications
2SC5231A
Features
•
Low-noise
High gain
High cut-off frequency : f =7GHz typ.
: NF=1.0dB typ (f=1GHz).
: ⏐S21e⏐2=12dB typ (f=1GHz).
•
•
T
• Ultrasmall-sized package permitting applied sets to be made small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
CBO
V
CEO
V
EBO
20
10
V
2
V
I
C
70
mA
mW
°C
°C
Collector Dissipation
P
100
150
C
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
1.0
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
V
V
V
=10V, I =0A
μA
μA
CBO
CB
EB
CE
E
I
=1V, I =0A
10
EBO
C
h
=5V, I =20mA
60*
270*
FE
C
Continued on next page.
* : The 2SC5231A is classified by 20mA hFE as follows :
Marking
Rank
C7
7
C8
8
C9
9
h
FE
60 to 120
90 to 180
135 to 270
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51408AB TI IM TC-00001355
No. A1077-1/6
2SC5231A
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Gain-Bandwidth Product
Output Capacitance
f
V
CE
V
CB
V
CB
V
CE
V
CE
V
CE
=5V, I =20mA
C
5
9
7
GHz
pF
T
Cob
=10V, f=1MHz
=10V, f=1MHz
0.7
0.45
12
1.2
Reverse Transfer Capacitance
Cre
S21e 21
S21e 22
pF
=5V, I =20mA, f=1GHz
C
dB
dB
dB
⏐
⏐
⏐
Forward Transfer Gain
Noise Figure
=2V, I =3mA, f=1GHz
C
8.5
⏐
NF
=5V, I =7mA, f=1GHz
1.0
1.8
C
Package Dimensions
unit : mm (typ)
7027-002
1.6
0.8
0.4
0.4
1
2
3
1 : Base
2 : Emitter
3 : Collector
0.1 MIN
SANYO : SMCP
h
FE
-- I
f
-- I
T
C
C
2
3
2
V
=5V
V
=5V
CE
CE
10
100
7
5
7
5
3
2
3
2
1.0
10
7
5
7
5
7
2
3
5
7
2
3
5
7
2
3
5
3
5
3
5
7
2
7
2
7
2
1.0
1.0
10
100
10
100
ITR07968
Collector Current, I -- mA
Collector Current, I -- mA
ITR07964
C
C
Cob -- V
Cre -- V
CB
CB
3
2
3
f=1MHz
f=1MHz
2
1.0
1.0
7
5
7
5
3
2
3
2
0.1
0.1
7
5
7
5
3
5
3
5
3
3
5
3
5
3
7
2
7
2
7
2
7
2
7
1.0
2
7
2
0.1
1.0
0.1
10
10
Collector-to-Base Voltage, V
-- V ITR07965
Collector-to-Base Voltage, V
-- V ITR07966
CB
CB
No. A1077-2/6
2SC5231A
2
S21e
-- I
C
NF -- I
⏐
⏐
C
14
12
10
12
10
8
V
=5V
f=1GHz
CE
f=1GHz
8
6
6
4
4
2
0
2
0
3
5
7
2
3
5
7
2
3
5
7
100
2
3
5
3
5
3
5
7
2
7
2
7
2
1.0
1.0
10
10
100
ITR07967
Collector Current, I -- mA
ITR07963
Collector Current, I -- mA
C
C
P
-- Ta
C
120
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
ITR07969
No. A1077-3/6
2SC5231A
S Parameters
S11e
S21e
f=100MHz, f=200MHz to 2000MHz(200MHz Step)
f=100MHz, f=200MHz to 2000MHz(200MHz Step)
90°
j50
60°
120°
j25
j100
j150
j200
j250
150°
30°
j10
2.0GHz
2.0GHz
2.0GHz
2.0GHz
2.0GHz
2.0GHz
15
25
20
25
100
5
10
10
50
150
250
180°
0
0
V
=5V
CE
I =20mA
C
0.1GHz
--j250
--j200
--j10
--30°
--150°
V
=2V
--j150
CE
I =3mA
C
--j100
--j25
--60°
--120°
--j50
--90°
ITR07970
ITR07971
S12e
S22e
f=100MHz, f=200MHz to 2000MHz(200MHz Step)
f=100MHz, f=200MHz to 2000MHz(200MHz Step)
90°
j50
60°
120°
V
=5V
CE
2.0GHz
j25
j100
I =7mA
C
2.0GHz
2.0GHz
j150
150°
30°
j200
j250
j10
0.1GHz
100
=5V
0.1GHz
V
CE
I =20mA
250
0.04 0.08 0.12 0.16
10
25
50
0.2 0
0.1GHz
150
180°
0
C
0.1GHz
V
=5V
2.0GHz
CE
I =7mA
C
2.0GHz
2.0GHz
--j250
--j200
--j10
--30°
--150°
=2V
I =3mA
V
CE
--j150
C
--j100
--j25
--60°
--120°
--j50
--90°
ITR07972
ITR07973
No. A1077-4/6
2SC5231A
S Parameters (Common emitter)
V
V
V
=5V, I =7mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--40.7
S
∠S21
151.3
131.4
108.6
96.1
87.3
80.4
74.0
68.6
63.8
58.4
54.0
S
∠S12
70.1
58.0
49.6
49.3
50.8
52.6
54.0
55.2
56.6
56.7
56.7
S
⏐
22
∠S22
--20.4
--33.4
--43.7
--46.7
--44.4
--49.7
--51.6
--54.1
--56.2
--60.0
--63.2
⏐
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.786
0.677
0.546
0.492
0.473
0.465
0.457
0.451
0.449
0.454
0.460
17.507
13.998
9.061
6.442
5.005
4.073
3.449
2.989
2.658
2.378
2.154
0.028
0.046
0.064
0.076
0.087
0.099
0.111
0.124
0.138
0.151
0.166
0.898
0.739
0.525
0.423
0.374
0.346
0.332
0.321
0.319
0.313
0.311
200
--72.4
400
--112.7
--135.2
--150.0
--160.0
--169.5
--176.2
177.8
600
800
1000
1200
1400
1600
1800
2000
172.5
167.1
=5V, I =20mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--65.8
--103.7
--139.6
--156.6
--166.6
--174.0
178.6
S
∠S21
137.1
116.6
98.6
89.3
82.5
77.0
71.8
66.9
62.7
58.0
54.0
S
∠S12
64.1
57.0
58.7
61.3
63.1
63.8
63.9
63.6
63.2
61.8
60.6
S
⏐ ⏐
22
∠S22
--32.9
--50.3
--50.3
--50.7
--51.3
--52.9
--55.1
--57.7
--60.2
--64.8
--68.3
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.601
0.497
0.435
0.419
0.414
0.413
0.413
0.411
0.413
0.416
0.422
28.967
19.309
10.891
7.461
5.695
4.613
3.870
3.345
2.960
2.655
2.406
0.023
0.035
0.050
0.065
0.081
0.098
0.114
0.131
0.148
0.165
0.182
0.757
0.534
0.345
0.280
0.251
0.235
0.226
0.221
0.220
0.219
0.218
200
400
600
800
1000
1200
1400
1600
1800
2000
173.8
169.6
165.1
160.3
=2V, I =3mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--30.2
S
∠S21
158.6
141.3
116.7
101.4
90.4
S
∠S12
73.6
60.5
45.1
38.4
35.8
35.7
36.5
38.4
40.7
42.5
44.7
S
⏐
22
∠S22
--15.1
--26.9
--41.1
--47.6
--51.2
--54.5
--57.5
--60.7
--64.0
--67.8
--72.1
⏐
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.888
0.815
0.690
0.616
0.584
0.566
0.555
0.546
0.541
0.545
0.547
9.280
8.218
6.074
4.517
3.610
2.995
2.540
2.213
1.982
1.774
1.614
0.038
0.067
0.098
0.112
0.120
0.125
0.131
0.137
0.143
0.152
0.163
0.949
0.849
0.657
0.539
0.475
0.434
0.410
0.393
0.391
0.382
0.381
200
--56.4
400
--96.0
600
--120.7
--138.0
--150.7
--161.2
--169.3
--176.4
177.1
800
1000
1200
1400
1600
1800
2000
81.9
74.2
67.5
62.0
55.9
170.9
50.9
No. A1077-5/6
2SC5231A
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of May, 2008. Specifications and information herein are subject
to change without notice.
PSNo. A1077-6/6
相关型号：
2SC5232
NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)
TOSHIBA
2SC5232
Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) Large collector current: IC = 500 mA (max).
TYSEMI
2SC5232-A
TRANSISTOR 500 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
©2020 ICPDF网 联系我们和版权申明