2SC5242OTU [ONSEMI]

NPN外延硅晶体管;
2SC5242OTU
型号: 2SC5242OTU
厂家: ONSEMI    ONSEMI
描述:

NPN外延硅晶体管

局域网 放大器 晶体管
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
January 2009  
2SC5242/FJA4313  
NPN Epitaxial Silicon Transistor  
Applications  
High-Fidelity Audio Output Amplifier  
General Purpose Power Amplifier  
Features  
High Current Capability: IC = 17A  
High Power Dissipation : 130watts  
High Frequency : 30MHz.  
TO-3P  
1.Base 2.Collector 3.Emitter  
1
High Voltage : VCEO=250V  
Wide S.O.A for reliable operation.  
Excellent Gain Linearity for low THD.  
Complement to 2SA1962/FJA4213.  
Thermal and electrical Spice models are available  
Same transistor is also available in:  
--TO264 package, 2SC5200/FJL4315 : 150 watts  
--TO220 package, FJP5200 : 80 watts  
--TO220F package, FJPF5200 : 50 watts  
Absolute Maximum Ratings*  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
Units  
BVCBO  
BVCEO  
BVEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current(DC)  
Base Current  
250  
250  
5
V
V
V
A
A
17  
IB  
1.5  
PD  
Total Device Dissipation(TC=25°C)  
Derate above 25°C  
130  
1.04  
W
W/°C  
TJ, TSTG  
Junction and Storage Temperature  
- 50 ~ +150  
°C  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics* T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Max.  
Units  
RθJC  
Thermal Resistance, Junction to Case  
0.96  
°C/W  
* Device mounted on minimum pad size  
h
Classification  
FE  
Classification  
R
O
hFE1  
55 ~ 110  
80 ~ 160  
© 2009 Fairchild Semiconductor Corporation  
2SC5242/FJA4313 Rev. C  
www.fairchildsemi.com  
1
Electrical Characteristics* T =25°C unless otherwise noted  
a
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
IC=5mA, IE=0  
Min. Typ. Max. Units  
250  
250  
5
V
V
IC=10mA, RBE=∞  
IE=5mA, IC=0  
V
VCB=230V, IE=0  
VEB=5V, IC=0  
5.0  
5.0  
µA  
µA  
IEBO  
Emitter Cut-off Current  
hFE1  
DC Current Gain  
VCE=5V, IC=1A  
VCE=5V, IC=7A  
IC=8A, IB=0.8A  
VCE=5V, IC=7A  
VCE=5V, IC=1A  
VCB=10V, f=1MHz  
55  
35  
160  
hFE2  
DC Current Gain  
60  
0.4  
1.0  
30  
VCE(sat)  
VBE(on)  
fT  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
3.0  
1.5  
V
V
Current Gain Bandwidth Product  
Output Capacitance  
MHz  
pF  
Cob  
200  
* Pulse Test: Pulse Width=20µs, Duty Cycle2%  
Ordering Information  
Part Number  
2SC5242RTU  
2SC5242OTU  
FJA4313RTU  
FJA4313OTU  
Marking  
C5242R  
C5242O  
J4313R  
Package  
TO-3P  
Packing Method  
Remarks  
hFE1 R grade  
hFE1 O grade  
hFE1 R grade  
hFE1 O grade  
TUBE  
TUBE  
TUBE  
TUBE  
TO-3P  
TO-3P  
J4313O  
TO-3P  
© 2009 Fairchild Semiconductor Corporation  
2SC5242/FJA4313 Rev. C  
www.fairchildsemi.com  
2
Typical Characteristics  
16  
14  
12  
10  
8
IB=200mA  
IB = 180mA  
IB = 160mA  
Vce=5V  
Tj=125oC  
Tj=25oC  
IB = 140mA  
IB = 120mA  
100  
10  
1
IB = 100mA  
IB = 80mA  
Tj=-25oC  
IB = 60mA  
IB = 40mA  
6
4
2
IB = 0  
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
1
10  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Ic[A], COLLECTORCURRENT  
Figure 1. Static Characteristic  
Figure 2. DC current Gain ( R grade )  
10000  
1000  
100  
10  
Ic=10Ib  
Tj=125oC  
Tj=25oC  
Vce=5V  
100  
10  
1
Tj=-25oC  
Tj=25oC  
Tj=125oC  
Tj=-25oC  
1
0.1  
1
10  
1
10  
Ic[A], COLLECTORCURRENT  
Ic[A], COLLECTORCURRENT  
Figure 3. DC current Gain ( O grade )  
Figure 4. Collector-Emitter Saturation Voltage  
10000  
12  
10  
8
VCE = 5V  
Ic=10Ib  
Tj=25oC  
Tj=-25oC  
1000  
6
4
Tj=125oC  
2
0
0.0  
100  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1
10  
Ic[A], COLLECTOR CURRENT  
VBE[V], BASE-EMITTER VOLTAGE  
Figure 5. Base-Emitter On Voltage  
Figure 6. Base-Emitter Saturation Voltage  
© 2009 Fairchild Semiconductor Corporation  
2SC5242/FJA4313 Rev. C  
www.fairchildsemi.com  
3
Typical Characteristics  
-100  
-10  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
IC MAX. (Pulsed*)  
IC MAX. (DC)  
10ms*  
100ms*  
DC  
-1  
-0.1  
-0.01  
*SINGLE NONREPETITIVE  
PULSE TC=25[oC]  
1E-6  
1E-5  
1E-4  
1E-3  
0.01  
0.1  
1
1
10  
100  
Pulse duration [sec]  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
Figure 7. Thermal Resistance  
Figure 8. Safe Operating Area  
160  
140  
120  
100  
80  
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
175  
TC[oC], CASE TEMPERATURE  
Figure 9. Power Derating  
© 2009 Fairchild Semiconductor Corporation  
2SC5242/FJA4313 Rev. C  
www.fairchildsemi.com  
4
Package Dimensions  
TO-3P  
15.60 0.20  
4.80 0.20  
+0.15  
13.60 0.20  
9.60 0.20  
ø3.20 0.10  
1.50  
–0.05  
2.00 0.20  
3.00 0.20  
1.00 0.20  
1.40 0.20  
+0.15  
0.60  
–0.05  
5.45TYP  
5.45TYP  
[5.45 0.30  
]
[5.45 0.30]  
Dimensions in Millimeters  
© 2009 Fairchild Semiconductor Corporation  
2SC5242/FJA4313 Rev. C  
www.fairchildsemi.com  
5
© 2009 Fairchild Semiconductor Corporation  
2SC5242/FJA4313 Rev. C  
www.fairchildsemi.com  
6
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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