2SC5551AF-TD-E [ONSEMI]
RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz;
| 型号： | 2SC5551AF-TD-E |
| 厂家： | 
ONSEMI |
| 描述： | RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz |
| 文件： | 总6页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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RF Transistor
1: Base
2: Collector
3: Emitter
1
2
3
30 V, 300 mA, fT = 3.5 GHz, NPN Single PCP
2SC5551A
SOT−89 / PCP−1
CASE 419AU
MARKING DIAGRAM
Features
• High f : (f = 3.5 GHz Typ)
T
T
• Large Current: (I = 300 mA)
C
• Large Allowable Collector Dissipation (1.3 W Max)
• These are Pb−Free Devices
RANK
Product & Package Information
• Package: PCP
• JEITA, JEDEC: SC−62, SOT−89, TO−243
• Minimum Packing Quantity: 1,000 Pcs./Reel
ELECTRICAL CONNECTION
2
Specifications
1
ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C)
Parameter
Symbol
Conditions
Ratings
Unit
3
Collector−to−Base
Voltage
V
CBO
V
CEO
V
EBO
40
V
Collector−to−Emitter
Voltage
30
2
V
V
ORDERING INFORMATION
Emitter−to−Base
Voltage
†
Device
Package
Shipping
Collector Current
I
300
600
mA
mA
C
2SC5551AE−TD−E
PCP
(Pb−Free)
1,000 / Tape &
Reel
Collector Current
(Pulse)
I
CP
2SC5551AF−TD−E
PCP
(Pb−Free)
1,000 / Tape &
Reel
Collector Dissipation
P
When mounted on
ceramic substrate
(250 mm x 0.8 mm)
1.3
W
C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2
Junction
Temperature
Tj
150
°C
Storage
Temperature
Tstg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
April, 2022 − Rev. 3
2SC5551A/D
2SC5551A
ELECTRICAL CHARACTERISTICS (at Ta = 25°C)
Ratings
Typ
−
Min
−
Max
1.0
5.0
270
−
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
Conditions
Unit
mA
I
V
V
V
V
V
V
= 20 V, I = 0 A
E
CBO
CB
EB
CE
CE
CE
CB
I
= 1 V, I = 0 A
−
−
mA
EBO
C
h
1
2
= 5 V, I = 50 mA
90
20
−
−
FE
FE
C
h
= 5 V, I = 300 mA
−
C
Gain−Bandwidth Product
f
T
= 5 V, I = 50 mA
3.5
2.9
1.5
0.07
0.8
−
GHz
pF
pF
V
C
Output Capacitance
Cob
Cre
= 10 V, f = 1 MHz
−
4.0
Reverse Transfer Capacitance
Collector−to−Emitter Saturation Voltage
Base−to−Emitter Saturation Voltage
−
V
CE
V
BE
(sat)
I
I
= 50 mA, I = 5 mA
−
0.3
1.2
C
B
(sat)
= 50 mA, I = 5 mA
−
V
C
B
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*The 2SC5551A is classified by 50 mA h as follows :
FE
Table 1.
Rank
E
F
h
FE
90 to 180
135 to 270
100
80
1000
V
CE
= 5 V
500 mA
7
5
450 mA
400 mA
350 mA
3
2
60
300 mA
250 mA
100
7
5
200 mA
150 mA
40
3
2
100 mA
50 mA
20
0
I
B
= 0 mA
10
0
4
20
8
12
16
2 3 5 7
2 3 5 7
100
2 3 5 7
1000
1.0
10
V
CE
, Collector−to−Emitter Voltage (V)
I , Collector Current (mA)
C
Figure 1. IC − VCE
Figure 2. hFE− IC
www.onsemi.com
2
2SC5551A
7
5
20
18
16
14
I
C
/ I = 10
B
V
CE
= 5 V
f = 200 MHz
3
2
12
10
8
f = 500 MHz
0.1
7
5
6
4
3
2
2
0
2
3
5 7
2
3
5 7
2
3
57
2
3
5 7
2
3
5 7
2
3
5 7
1000
1.0
10
100
1.0
10
100
I , Collector Current (mA)
C
I , Collector Current (mA)
C
Figure 3. VCE(sat) − IC
Figure 4. MS21eM2 − IC
10
10
7
f = 1 MHz
V
CE
= 5 V
7
5
5
3
2
1.0
7
Cob
Cre
3
2
5
3
2
1.0
0.1
2
3
5
7
2
3
5
7
2 3 5 7
2 3 5 7
2
3
5 7
1000
1.0
10
100
1.0
10
100
V
CB
, Collector−to−Base Voltage (V)
I , Collector Current (mA)
C
Figure 5. Cob, Cre − VCB
Figure 6. fT − IC
1.4
1000
When mounted on ceramic substrate
(250 mm x 0.8 mm)
I
= 600 mA
7
5
CP
1.3
1.2
2
I
C
= 300 mA
1 ms
3
2
1.0
0.8
0.6
0.4
10 ms
100
7
DC operation
5
Ta = 25°C
3
2
Single pulse
0.2
0
When mounted on ceramic substrate
(250 mm x 0.8 mm)
2
10
2
3
5
20
40
60
80
120 140 160
0
100
2
3
5
7
1.0
10
V
CE
, Collector−to−Emitter Voltage (V)
Ta, Ambient Temperature (°C)
Figure 7. ASO
Figure 8. PC − Ta
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3
2SC5551A
Land Pattern Example
Unit: mm
2.2
45°
1.0
1.0
1.5
3.0
Figure 9. Land Pattern Example
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−89 / PCP−1
CASE 419AU
ISSUE O
DATE 30 APR 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON79746E
SOT−89 / PCP−1
PAGE 1 OF 1
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