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2SC6097-TL [ONSEMI]

Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 3 PIN;
2SC6097-TL
型号： 2SC6097-TL
厂家： ONSEMI    ONSEMI
描述：

Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 3 PIN

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Ordering number : ENA0412  
NPN Epitaxial Planar Silicon Transistor  
2SC6097  
High-Current Switching Applications  
Applications  
•
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.  
Features  
•
•
•
•
•
Adoption of FBET, MBIT process.  
High current capacitance.  
Low collector-to-emitter saturation voltage.  
High-speed switching.  
High allowable power dissipation.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
100  
100  
60  
CBO  
V
V
CES  
CEO  
EBO  
V
V
V
6.5  
3
V
I
A
C
Collector Current (Pulse)  
Base Current  
I
5
A
CP  
I
B
600  
0.8  
15  
mA  
W
W
°C  
°C  
Collector Dissipation  
P
C
Tc=25°C  
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
=50V, I =0A  
Unit  
min  
max  
I
V
1
µA  
µA  
CBO  
CB  
EB  
CE  
E
Emitter Cutoff Current  
DC Current Gain  
I
V
V
=4V, I =0A  
1
EBO  
C
h
FE  
=2V, I =100mA  
300  
600  
C
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
70306 / 53006EA MS IM TB-00002348 No. A0412-1/4  
2SC6097  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Gain-Bandwidth Product  
Output Capacitance  
f
V
V
=10V, I =500mA  
C
390  
18  
MHz  
pF  
mV  
mV  
V
T
CE  
CB  
Cob  
=10V, f=1MHz  
V
V
(sat)1  
I
C
I
C
I
C
I
C
I
C
I
C
=1A, I =50mA  
100  
90  
150  
CE  
CE  
B
Collector-to-Emitter Saturation Voltage  
(sat)2  
(sat)  
=1A, I =100mA  
135  
1.2  
B
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Emitter-to-Base Breakdown Voltage  
Turn-ON Time  
V
=1A, I =100mA  
0.84  
BE  
B
V
=10µA, I =0A  
100  
V
(BR)CBO  
E
V
=100µA, R =0Ω  
BE  
100  
60  
V
(BR)CES  
(BR)CEO  
(BR)EBO  
V
V
=1mA, R =∞  
BE  
V
I =10µA, I =0A  
E
6.5  
V
C
t
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
35  
680  
24  
ns  
ns  
ns  
on  
Storage Time  
t
stg  
Fall Time  
t
f
Package Dimensions  
unit : mm  
7518-003  
Package Dimensions  
unit : mm  
7003-003  
2.3  
6.5  
5.0  
6.5  
5.0  
4
2.3  
0.5  
0.5  
4
0.5  
0.85  
0.85  
0.7  
1.2  
1
2
3
0.6  
0 to 0.2  
1.2  
0.6  
0.5  
1 : Base  
2 : Collector  
3 : Emitter  
1 : Base  
2 : Collector  
3 : Emitter  
4 : Collector  
1
2
3
4 : Collector  
2.3 2.3  
SANYO : TP-FA  
2.3 2.3  
SANYO : TP  
Switching Time Test Circuit  
I
B1  
PW=20µs  
D.C.≤1%  
OUTPUT  
I
B2  
INPUT  
V
10  
R
R
B
R
L
50Ω  
+
+
100µF  
470µF  
V
= --5V  
V
=30V  
CC  
BE  
10I = --10I =I =0.5A  
C
B2  
B1  
No. A0412-2/4  
2SC6097  
I
-- V  
I
-- V  
BE  
C
CE  
C
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
3.0  
2.5  
2.0  
1.5  
1.0  
V
=2V  
CE  
0.5  
0
0.5  
0
I =0mA  
B
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
IT11047  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
Collector-to-Emitter Voltage, V  
-- V IT11046  
Base-to-Emitter Voltage, V  
-- V  
BE  
CE  
h
FE  
-- I  
f
-- I  
C
C
T
1000  
7
5
V
CE  
=10V  
V
=2V  
CE  
7
5
3
2
3
2
100  
7
5
100  
7
5
3
2
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
2
3
0.01  
0.1  
1.0  
0.01  
0.1  
1.0  
IT11048  
IT11049  
Collector Current, I -- A  
C
Collector Current, I -- A  
V
(sat) --CI  
C
Cob -- V  
CE  
CB  
7
5
5
I
/ I =10  
B
f=1MHz  
C
3
2
0.1  
3
2
7
5
3
2
0.01  
10  
7
5
7
5
3
2
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
0.1  
1.0  
10  
100  
0.1  
1.0  
Collector-to-Base Voltage, V  
-- V  
IT11050  
Collector Current, I -- A  
IT11051  
CB  
V
(sat) -- CI  
C
V
(sat) -- I  
BE  
CE  
C
5
3
2
I
/ I =20  
B
I
/ I =10  
B
C
C
3
2
0.1  
7
5
1.0  
3
2
7
5
0.01  
7
5
0.01  
3
0.01  
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
1.0  
2
3
5
0.1  
1.0  
0.1  
Collector Current, I -- A  
IT11053  
Collector Current, I -- A  
IT11052  
C
C
No. A0412-3/4  
2SC6097  
A S O  
A S O  
10  
10  
10ms  
7
5
7
5
1ms  
<10µs  
I
=5A  
<10µs  
I
=5A  
CP  
CP  
3
2
3
2
I =3A  
C
DC operation  
100ms  
I =3A  
C
1.0  
7
5
1.0  
7
5
3
2
3
2
0.1  
0.1  
7
5
7
5
3
2
3
2
Ta=25°C  
Tc=25°C  
Single Pulse  
Single Pulse  
0.01  
0.1  
0.01  
0.1  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7  
100  
IT11055  
1.0  
10  
100  
IT11054  
1.0  
10  
Collector-to-Emitter Voltage, V  
CE  
-- V  
Collector-to-Emitter Voltage, V  
CE  
-- V  
P
-- Ta  
P
-- Tc  
C
C
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
17.5  
15.0  
12.5  
10.0  
7.5  
5.0  
2.5  
0
0.1  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
IT11056  
IT11057  
Ambient Temperature, Ta -- °C  
Case Temperature, Tc -- °C  
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state,  
and are not guarantees of the performance, characteristics, and functions of the described products  
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be  
evaluated in an independent device, the customer should always evaluate and test devices mounted  
in the customer's products or equipment.  
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any  
and all semiconductor products fail with some probability. It is possible that these probabilistic failures  
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or  
fire, or that could cause damage to other property. When designing equipment, adopt safety measures  
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to  
protective circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO Semiconductor products (including technical data,services) described  
or contained herein are controlled under any of applicable local export control laws and regulations, such  
products must not be exported without obtaining the export license from the authorities concerned in  
accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic  
or mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO Semiconductor product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not  
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate  
and reliable, but no guarantees are made or implied regarding its use or any infringements of  
intellectual property rights or other rights of third parties.  
This catalog provides information as of May, 2006. Specifications and information herein are subject  
to change without notice.  
PS No. A0412-4/4  

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