2SD1618 [ONSEMI]
Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single PCP;
| 型号： | 2SD1618 |
| 厂家： | 
ONSEMI |
| 描述： | Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single PCP 放大器 PC 晶体管 |
| 文件： | 总6页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN1784C
2SD1618
Bipolar Transistor
http://onsemi.com
( )
sat , NPN Single PCP
15V, 0.7A, Low V
CE
Features
•
Low collector-to-emitter saturation voltage
•
Very small size making it easy to provide highdensity, small-sized hybrid IC’s
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
20
CBO
V
15
V
CEO
V
5
V
EBO
I
C
0.7
A
Collector Current (Pulse)
I
1.5
500
A
CP
mW
W
Collector Dissipation
P
C
When mounted on ceramic substrate (250mm2 0.8mm)
1.3
×
Junction Temperature
Storage Temperature
Tj
150
C
C
°
°
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: PCP
7007B-004
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
•
Minimum Packing Quantity : 1,000 pcs./reel
Top View
2SD1618S-TD-E
2SD1618T-TD-E
4.5
1.6
Packing Type: TD
Marking
1.5
TD
RANK
1
2
3
0.4
0.5
0.4
1.5
Electrical Connection
3.0
2
1
0.75
3
1 : Base
2 : Collector
3 : Emitter
Bottom View
PCP
Semiconductor Components Industries, LLC, 2013
September, 2013
80812 TKIM/92098HA (KT)/4017KI/0216AT/2065MY, TS No.1784-1/6
2SD1618
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
0.1
Collector Cutoff Current
Emitter Cutoff Current
I
V
=15V, I =0A
A
A
μ
CBO
CB
E
I
V
=4V, I =0A
0.1
μ
EBO
EB C
h
h
1
2
V
=2V, I =50mA
140*
560*
FE
FE
CE
C
DC Current Gain
V
CE
=2V, I =500mA
60
C
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
f
V
=10V, I =50mA
250
10
MHz
mV
mV
V
T
CE
C
V
(sat)1
I
C
=5mA, I =0.5mA
25
80
CE
B
V
(sat)2
I
C
=100mA, I =10mA
30
CE
B
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
V
(sat)
I
C
=100mA, I =10mA
0.8
1.2
BE
B
V
I
C
=10 A, I =0A
20
15
5
V
μ
(BR)CBO
E
V
I
C
=1mA, R
=
V
∞
(BR)CEO
BE
V
I =10 A, I =0A
E
V
μ
(BR)EBO
C
C
V
CB
=10V, f=1MHz
8
pF
ob
* : The 2SD1618 is classified by 50mA hFE as follows :
Rank
S
T
U
h
140 to 280
200 to 400
280 to 560
FE
Ordering Information
Device
2SD1618S-TD-E
2SD1618T-TD-E
Package
Shipping
memo
PCP
PCP
1,000pcs./reel
1,000pcs./reel
Pb Free
No.1784-2/6
2SD1618
I
C
-- V
I
-- V
B BE
CE
100
80
800
700
600
500
400
300
200
V
=5V
CE
60
40
20
0
100
0
I =0
B
0.4
0
0.2
0.4
0.6
0.8
1.0
0
0.1
0.2
0.3
0.5
Collector-to-Emitter Voltage, V
-- V ITR08841
Base-to-Emitter Voltage, V
BE
-- V ITR08842
CE
f
-- I
h
-- I
T
C
FE
C
1000
1000
V
=2V
V
=10V
CE
CE
7
5
7
5
3
2
3
2
100
7
100
7
5
5
3
2
3
2
10
1.0
10
1.0
2
3
5
7
2
3
5
7
2
3
5
2
3
5
2
3
5
2
3
5
10
100
10
100
1000
Collector Current, I -- mA
ITR08843
Collector Current, I -- mA
ITR08844
C
C
Cob -- V
CB
V
(sat) -- I
CE
C
10000
5
f=1MHz
I
/ I =10
B
C
5
3
2
3
2
1000
5
3
2
10
100
7
5
5
3
2
10
3
1.0
5
1.0
2
3
5
7
2
3
2
3
5
2
3
5
2
3
5
10
100
1000
ITR08846
10
Collector-to-Base Voltage, V
CB
-- V ITR08845
Collector Current, I -- mA
C
P
-- Ta
A S O
C
1.6
5
Mounted on a ceramic board (250mm2✕0.8mm)
3
2
1.4
1.3
1.2
I
CP
1.0
I
C
1.0
0.8
7
5
3
2
0.6
0.5
0.4
0.1
7
5
0.2
0
Single pulse
3
0
20
40
60
80
100
120
140
160
5
7
2
3
5
7
2
3
5
1.0
10
Ambient Temperature, Ta -- °C
ITR08847
Collector-to-Emitter Voltage, V
CE
-- V ITR08848
No.1784-3/6
2SD1618
Bag Packing Specification
2SD1618S-TD-E, 2SD1618T-TD-E
No.1784-4/6
2SD1618
Outline Drawing
Land Pattern Example
2SD1618S-TD-E, 2SD1618T-TD-E
Mass (g) Unit
Unit: mm
0.058
mm
* For reference
2.2
45°
45°
1.0
1.0
1.5
3.0
No.1784-5/6
2SD1618
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PS No.1784-6/6
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