2SD1667 [ONSEMI]
TRANSISTOR,BJT,NPN,50V V(BR)CEO,5A I(C),TO-220;
| 型号： | 2SD1667 |
| 厂家： | 
ONSEMI |
| 描述： | TRANSISTOR,BJT,NPN,50V V(BR)CEO,5A I(C),TO-220 |
| 文件： | 总5页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN2091D
SANYO Sem iconductors
DATA S HEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SB1134 / 2SD1667
50V/5A Switching Applications
Applications
• Relay drivers, high-speed inverters, and other general high-current switching applications
Features
• Low-saturation collector-to-emitter voltage : V (sat)=(–)0.4V max/I =(–)3A, I =(–)0.3A
CE
C
B
• Micaless package facilitating mounting
Specifications ( ) : 2SB1134
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
V
V
(--)60
(--)50
(--14)6
(--)5
(--)9
2
CBO
CEO
EBO
V
V
I
A
C
Collector Current (Pulse)
I
A
CP
W
W
°C
°C
Collector Dissipation
P
C
Tc=25°C
25
Junction Temperature
Storage Temperature
Tj
150
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
=(--)40V, I =0A
Unit
min
max
Collector Cutoff Current
Emitter Cutoff Current
I
I
V
V
(--)0.1
(--)0.1
mA
mA
CBO
CB
EB
E
=(--)4V, I =0A
EBO
C
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
http://semicon.sanyo.com/en/network
72110FA TK IM TA-0475 / O2003TN (KOTO)/92098HA (KT)/10996TS (KOTO) 8-8812/4107AT, TS No.2091-1/5
2SB1134 / 2SD1667
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
70*
max
280*
h
h
1
2
V
V
V
V
=(--)2V, I =(--)1A
C
FE
CE
CE
CE
CB
DC Current Gain
=(--)2V, I =(--)3A
30
FE
C
Gain-Bandwidth Product
Output Capacitance
f
=(--)5V, I =(--)1A
C
30
MHz
pF
V
T
Cob
=(--)10V, f=1MHz
(160)100
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V
V
V
V
(sat)
CE
I
C
I
C
I
C
=(--)3A, I =(--)0.3A
(--)0.4
B
=(--)1mA, I =0A
(--)60
(--)50
(--)6
V
(BR)CBO
(BR)CEO
(BR)EBO
E
=(--)1mA, R =∞
BE
V
I =(--)1mA, I =0A
V
E
C
t
t
t
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
0.1
(0.7)1.4
0.2
μs
μs
μs
on
Storage Time
stg
f
Fall Time
*: The 2SB1134 / 2SD1667 are classified by 1A h as follws:
FE
Rank
Q
R
S
h
70 to 140
100 to 200
140 to 280
FE
Package Dimensions
unit : mm (typ)
Switching Time Test Circuit
I
B1
7508-002
1
INPUT
OUTPUT
PW=20μs
t , t ≤15ns
I
100
Ω
4.5
10.0
r
f
B2
+
10Ω
2.8
3.2
+
50Ω
100μF
470μF
--5V
20V
I =10I = --10I =2A
C B1 B2
(For PNP, the polarity is reversed)
1.6
1.2
0.75
0.7
1
2 3
1 : Base
2 : Collector
3 : Emitter
2.55
2.55
SANYO : TO-220ML
I
-- V
I
-- V
CE
C
CE
C
--10
--8
10
8
2SB1134
2SD1667
--6
6
4
--4
2
0
--2
0
I =0mA
B
2.0
I =0mA
B
0
0.4
0.8
1.2
1.6
2.4
0
--0.4
--0.8
--1.2
--1.6
--2.0
--2.4
Collector-to-Emitter Voltage, V
CE
-- V ITR08250
Collector-to-Emitter Voltage, V -- V ITR08251
CE
No.2091-2/5
2SB1134 / 2SD1667
I
-- V
I
-- V
BE
C
BE
C
10
--10
--8
2SB1134
2SD1667
=2V
V
CE
=--2V
V
CE
8
6
4
--6
--4
2
0
--2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
Base-to-Emitter Voltage, V
-- V ITR08252
Base-to-Emitter Voltage, V
-- V ITR08253
BE
BE
h
FE
-- I
h
FE
-- I
C
C
1000
1000
2SB1134
2SD1667
7
5
7
5
V
CE
=--2V
V
CE
=2V
Ta=80°C
3
2
3
2
25
°C
100
100
7
5
7
5
3
2
3
2
10
10
2
3
5
2
3
5
2
3
5
2
2
3
5
2
3
5
2
3
5
2
--0.01
--0.1
--1.0
--10
0.01
0.1
1.0
10
ITR08255
Collector Current, I -- A
ITR08254
Collector Current, I -- A
V
(sat) -- CI
V
(sat) -- CI
CE C
CE
C
2
2
2SB1134
2SD1667
I
C
/ I =10
B
I / I =10
C B
1.0
--1.0
5
5
3
2
3
2
0.1
--0.1
5
5
3
2
3
2
--0.01
0.01
2
3
5
2
3
5
2
3
5
2
2
3
5
2
3
5
2
3
5
2
--0.1
--1.0
--10
0.1
1.0
10
Collector Current, I -- A
ITR08256
Collector Current, I -- A
ITR08257
C
V
(sat) -- I
V
(sat) -- CI
CE C
CE
C
3
2
3
2
2SB1134
/ I =20
2SD1667
I / I =20
C B
I
C
B
1.0
--1.0
5
5
3
2
3
2
0.1
--0.1
5
5
3
2
3
2
--0.01
0.01
2
3
5
2
3
5
2
3
5
2
2
3
5
2
3
5
2
3
5
2
--0.1
--1.0
--10
0.1
1.0
10
Collector Current, I -- A
ITR08258
Collector Current, I -- A
ITR08259
C
C
No.2091-3/5
2SB1134 / 2SD1667
V
(sat) -- I
V
(sat) -- I
BE
C
BE
C
3
2
3
2SB1134
2SD1667
2
1.0
--1.0
7
5
7
5
3
2
3
2
2
5
0
3
5
2
3
5
2
3
5
2
2
5
0
3
5
2
3
5
2
3
5
2
--0.1
--1.0
--10
0.1
1.0
10
Collector Current, I -- A
ITR08260
Collector Current, I -- A
ITR08261
C
C
A S O
A S O
2
2
2SB1134
2SD1667
I
= --9A
I
10
=9A
CP
CP
--10
7
5
7
5
I =5A
C
I = --5A
C
3
2
3
2
--1.0
1.0
7
5
7
5
3
2
3
2
1ms to 100ms : Single pulse
7
1ms to 100ms : Single pulse
0.1
--0.1
2
3
5
7
2
3
5
7
7
2
3
5
7
2
3
5
7
--1.0
--10
--100
-- V ITR08262
1.0
10
100
-- V ITR08263
Collector-to-Emitter Voltage, V
Collector-to-Emitter Voltage, V
CE
CE
P
-- Tc
P
-- Ta
C
C
2.4
2.0
1.6
1.2
0.8
28
2SB1134 / 2SD1667
2SB1134 / 2SD1667
25
24
20
16
12
8
0.4
0
4
0
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
Case Temperature, Tc -- °C
ITR08264
ITR08265
Ambient Temperature, Ta -- °C
No.2091-4/5
2SB1134 / 2SD1667
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of July, 2010. Specifications and information herein are subject
to change without notice.
PS No.2091-5/5
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