2SD1817TP [ONSEMI]
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TP, 3 PIN;
| 型号： | 2SD1817TP |
| 厂家： | 
ONSEMI |
| 描述： | Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TP, 3 PIN |
| 文件： | 总4页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number:EN2369A
NPN Epitaxial Planar Silicon Transistor
2SD1817
Driver Applications
Applications
Package Dimensions
unit:mm
· Motor drivers, hammer drivers, relay drivers.
2045B
Features
[2SD1817]
6.5
5.0
2.3
· High DC current gain.
0.5
4
· Small and slim package permitting the 2SD1817-
applied sets to be made more compact.
0.85
0.7
1.2
1 : Base
0.6
0.5
2 : Collector
3 : Emitter
4 : Collector
1
2
3
2.3
2.3
SANYO : TP
unit:mm
2044B
[2SD1817]
6.5
2.3
5.0
0.5
4
0.5
0.85
1
2
3
1 : Base
0.6
1.2
0~0.2
2 : Collector
3 : Emitter
4 : Collector
2.3
2.3
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22599TH (KT)/8219MO/5217TA, TS No.2369–1/4
2SD1817
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
V
V
80
60
6
CBO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
V
CEO
V
V
EBO
I
3
A
C
Collector Current (Pulse)
I
6
A
CP
1
W
W
˚C
˚C
Collector Dissipation
P
C
15
150
Tc=25˚C
Junction Temperature
Storage Temperature
Tj
Tstg
–55 to +150
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
10
Collector Cutoff Current
I
V
V
V
V
I
=60V, I =0
E
µA
CBO
CB
EB
CE
CE
Emitter Cutoff Current
DC Current Gain
I
=5V, I =0
2.5
mA
EBO
C
h
h
1
=2V, I =1A
C
=2V, I =2A
C
=2A, I =4mA
B
2000
1000
FE
FE
2
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
V
V
1.5
2.0
V
V
V
V
CE(sat)
BE(sat)
C
I
I
I
=2A, I =4mA
C
C
C
B
V
V
=1mA, I =0
E
80
60
(BR)CBO
(BR)CEO
=25mA, R =∞
BE
Electrical Connection
No.2369–2/4
2SD1817
No.2369–3/4
2SD1817
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 1999. Specifications and information herein are subject
to change without notice.
PS No.2369–4/4
相关型号：
2SD1818-K
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin,
NEC
2SD1818-K-AZ
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
NEC
2SD1818-L
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin,
NEC
2SD1818-L-AZ
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
NEC
2SD1818-M-AZ
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
NEC
2SD1819A
High foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).
TYSEMI
©2020 ICPDF网 联系我们和版权申明