2SD1904S [ONSEMI]

TRANSISTOR,BJT,NPN,50V V(BR)CEO,5A I(C),TO-220;
2SD1904S
型号: 2SD1904S
厂家: ONSEMI    ONSEMI
描述:

TRANSISTOR,BJT,NPN,50V V(BR)CEO,5A I(C),TO-220

文件: 总4页 (文件大小:43K)
中文:  中文翻译
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Ordering number:ENN2264B  
PNP/NPN Epitaxial Planar Silicon Transistors  
2SB1268/2SD1904  
High-Current Switching Applicatons  
Applications  
Package Dimensions  
unit:mm  
· Suitable for relay drivers, high-speed inverters,  
converters, and other general high-current switching  
2049C  
applications.  
[2SB1268/2SD1904]  
10.2  
4.5  
1.3  
Features  
· Suitable for sets whose height is restricted.  
· Low collector to emitter saturation voltage.  
1.2  
0.8  
0.4  
1
2
3
1 : Base  
2 : Collector  
3 : Emitter  
SANYO : TO-220MF  
( ) : 2SB1268  
2.55  
2.55  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
()60  
()50  
()6  
()5  
()9  
1.65  
30  
V
V
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
CEO  
V
V
EBO  
I
A
C
Collector Current (Pulse)  
I
A
CP  
W
W
˚C  
Collector Dissipation  
P
C
Tc=25˚C  
Junction Temperature  
Storage Temperature  
Tj  
150  
˚C  
Tstg  
55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Collector Cutoff Current  
I
V
=()40V, I =0  
()0.1  
()0.1  
280*  
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
CE  
E
Emitter Cutoff Current  
DC Current Gain  
I
V
V
V
V
=()4V, I =0  
EBO  
C
h
1
=()2V, I =()1A  
70*  
30  
FE  
FE  
C
h
2
=()2V, I =()3A  
C
Gain-Bandwidth Product  
f
=()5V, I =()1A  
30  
MHz  
T
C
* : The 2SB1268/2SD1904 are classified by 1A h as follows :  
Continued on next page.  
FE  
Rank  
Q
R
S
h
70 to 140  
100 to 200 140 to 280  
FE  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
11504TN (KT)/O1598HA (KT)/D251MH/3309TA/4177TA, TS No.2264–1/4  
2SB1268/2SD1904  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
100  
pF  
pF  
V
Output Capacitance  
C
V
I
=()10V, f=1MHz  
CB  
ob  
(160)  
Collector-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Emitter-to-Base Breakdown Voltage  
Turn-ON Time  
V
=()3A, I =()0.3A  
()0.4  
CE(sat)  
C
B
V
V
V
I
=()1mA, I =0  
()60  
()50  
()6  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
C
E
I
=()1mA, R =  
V
C
BE  
I =()1mA, I =0  
V
E
C
t
See specified test circuit.  
See specified test circuit.  
See specified test circuit.  
0.1  
(0.7)  
1.4  
µs  
µs  
µs  
µs  
on  
Storage Time  
Fall Time  
t
stg  
t
f
0.2  
Switching Time Test Circuit  
I
B1  
PW=20µs  
tr, tf15ns  
OUTPUT  
I
B2  
INPUT  
R
B
V
R
R
10Ω  
L
1Ω  
100Ω  
50Ω  
+
1µF  
+
1µF  
V
= --5V  
V
=20V  
CC  
BE  
I =10I = --10I =2A  
B1 B2  
C
(For PNP, the polarity is reversed.)  
I
-- V  
CE  
I
-- V  
C
C
CE  
--10  
--8  
--6  
--4  
--2  
10  
8
2SB1268  
2SD1904  
6
4
2
0
I =0  
I =0  
B
B
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
V  
ITR09475  
0
--0.4  
--0.8  
--1.2  
--1.6  
--2.0  
--2.4  
V  
ITR09474  
Collector-to-Emitter Voltage, V  
Collector-to-Emitter Voltage, V  
CE  
CE  
I
-- V  
BE  
I
-- V  
BE  
C
C
--10  
--9  
10  
9
2SB1268  
2SD1904  
V =2V  
CE  
V
= --2V  
CE  
8
--8  
--7  
--6  
--5  
--4  
--3  
7
6
5
4
3
2
--2  
1
0
--1  
0
0
--0.2  
--0.4  
--0.6  
--0.8  
--1.0  
--1.2  
--1.4  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
Base-to-Emitter Voltage, V  
BE  
V  
Base-to-Emitter Voltage, V V  
BE  
ITR09476  
ITR09477  
No.2264–2/4  
2SB1268/2SD1904  
h
FE  
-- I  
h
FE  
-- I  
C
C
1000  
1000  
2SB1268  
2SD1904  
V =2V  
CE  
7
7
V
=
--2V  
CE  
5
5
Ta=80°C  
25°C  
3
2
3
2
Ta=80°C  
25°C  
100  
100  
7
5
7
5
3
2
3
2
10  
0.01  
10  
--0.01  
2
3
5
2
3
5
2
3
5
2
2
3
5
2
3
5
2
3
5
2
--0.1  
--1.0  
--10  
ITR09478  
1.0  
10  
ITR09479  
C0o.l1lector Current, I A  
Collector Current, I A  
C
C
V
(sat) -- I  
V
(sat) -- I  
CE  
C
CE  
C
--10  
10  
2SB1268  
2SD1904  
5
5
I
C
/ I =10  
B
I
C
/ I =10  
B
3
2
3
2
1.0  
--1.0  
5
5
3
2
3
2
--0.1  
0.1  
5
5
3
2
3
2
0.01  
--0.01  
2
2
2
3
3
3
5
2
3
5
2
3
5
2
2
2
2
3
3
3
5
2
3
5
2
3
5
2
--0.1  
--1.0  
--10  
0.1  
1.0  
10  
Collector Current, I A  
Collector Current, I A  
ITR09480  
ITR09481  
C
C
V
(sat) -- I  
V
(sat) -- I  
CE  
C
CE  
C
10  
--10  
2SD1904  
2SB1268  
5
5
I
C
/ I =20  
B
I
C
/ I =20  
B
3
2
3
2
1.0  
--1.0  
5
3
2
5
3
2
0.1  
--0.1  
5
5
3
2
3
2
0.01  
--0.01  
5
2
3
5
2
3
5
2
5
2
3
5
2
3
5
2
--0.1  
--1.0  
--10  
0.1  
1.0  
10  
Collector Current, I A  
Collector Current, I A  
ITR09482  
C
C
ITR09483  
V
(sat) -- I  
V
(sat) -- I  
BE  
C
BE  
C
--10  
10  
2SB1268  
2SD1904  
7
7
5
5
3
2
3
2
--1.0  
1.0  
7
5
7
5
3
2
3
2
5
2
3
5
2
3
5
2
5
2
3
5
2
3
5
2
0.1  
1.0  
10  
--0.1  
--1.0  
--10  
Collector Current, I A  
Collector Current, I A  
C
ITR09484  
ITR09485  
C
No.22643/4  
2SB1268/2SD1904  
A S O  
A S O  
2
2
2SB1268  
2SD1904  
I
=9A  
I
=9A  
CP  
CP  
10  
--10  
7
5
7
I =5A  
I =5A  
C
C
5
3
2
3
2
--1.0  
1.0  
7
5
7
5
3
2
3
2
1ms to 100ms : single pulse  
1ms to 100ms : single pulse  
0.1  
--0.1  
5
7
2
3
5
7
2
3
5
7
5
7
2
3
5
7
2
3
5
7
--1.0  
--10  
--100  
ITR09486  
1.0  
10  
100  
Collector-to-Emitter Voltage, V V  
ITR09487  
CE  
Collector-to-Emitter Voltage, V  
V  
CE  
P
-- Ta  
P
-- Ta  
C
C
40  
35  
30  
25  
20  
15  
10  
2.0  
2SB1268 / 2SD1904  
2SB1268 / 2SD1904  
1.65  
1.6  
1.2  
0.8  
0.4  
0
5
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta – ˚C  
Ambient Temperature, Ta – ˚C  
ITR09488  
ITR09489  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer's  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer's products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of January, 2004. Specifications and information herein are subject  
to change without notice.  
PS No.22644/4  

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