2SD2720(TP-FA) [ONSEMI]

TRANSISTOR,BJT,NPN,30V V(BR)CEO,3A I(C),TO-252VAR;


型号：	2SD2720(TP-FA)
厂家：	ONSEMI
描述：	TRANSISTOR,BJT,NPN,30V V(BR)CEO,3A I(C),TO-252VAR
文件：	总5页 (文件大小：49K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Ordering number : ENA0437A

2SB1739 / 2SD2720

SANYO Sem iconductors

DATA S HEET

PNP / NPN Epitaxial Planar Silicon Transistors

Compact Motor Driver

Applications

2SB1739 / 2SD2720

Features

•

Low saturation voltage.

•

Contains diode between collector and emitter.

•

Contains bias resistance between base and emitter.

•

Large current capacity.

Specifications ( ) : 2SB1739

Absolute Maximum Ratings at Ta=25°C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

Conditions

Ratings

Unit

CBO

CEO

EBO

(--)40

(--)30

(--)6

(--)3

(--)5

Collector Current (Pulse)

°C

Collector Dissipation

Tc=25°C

Junction Temperature

Storage Temperature

Tstg

150

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Collector Cutoff Current

Symbol

Conditions

=(--)30V, I =0A

Unit

min

max

(--)1.0

µA

CBO

=(--)2V, I =(--)0.5A

DC Current Gain

=(--)2V, I =(--)2A

Gain-Bandwidth Product

=(--)2V, I =(--)0.5A

100

(55)40

MHz

Output Capacitance

Cob

=(--)10V, f=1MHz

Collector-to-Emitter Saturation Voltage

Base-to-Emitterr Saturation Voltage

Collector-to-Base Breakdown Voltage

(sat)

=(--)2A, I =(--)100mA

(--0.28)0.23 (--0.6)0.5

(--)1.5

(sat)

=(--)2A, I =(--)100mA

=(--)10µA, I =0A

(--)40

(--)30

(BR)CBO

=(--)10µA, R =∞

(BR)CEO

Collector-to-Emitter Breakdown Voltage

=(--)10mA, R =∞

Diode Forwad Voltage

I =(--)0.5A

(--)1.5

0.8

Base-to-Emitter Resistance

kΩ

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

83006 MS IM / 72006EA MS IM TC-00000064

No. A0437-1/5

2SB1739 / 2SD2720

Package Dimensions

unit : mm (typ)

7518-003

Package Dimensions

unit : mm (typ)

7003-003

2.3

6.5

5.0

6.5

5.0

2.3

0.5

0.85

0.7

1.2

0.6

0 to 0.2

1.2

0.6

0.5

1 : Base

2 : Collector

3 : Emitter

4 : Collector

2 : Collector

3 : Emitter

4 : Collector

2.3 2.3

SANYO : TP-FA

2.3 2.3

SANYO : TP

Electrical Connection

Collector

2SB1739

2SD2720

Base

Emitter

-- V

C CE

--1.0

1.0

2SB1739

2SD2720

--0.9

--0.8

--0.7

--0.6

--0.5

--0.4

--0.3

--0.2

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

I =0mA

--0.1

0.1

--1mA

1mA

--0.1

--0.2

--0.3

--0.4

--0.5

0.1

0.2

0.3

0.4

0.5

Collector-to-Emitter Voltage, V

-- V ^IT11149

Collector-to-Emitter Voltage, V

-- V ^IT11150

-- V

--3.0

--2.5

--2.0

--1.5

--1.0

3.0

2.5

2.0

1.5

1.0

2SB1739

2SD2720

8mA

6mA

4mA

2mA

--0.5

0.5

I =0mA

--2

--4

--6

--8

--10

Collector-to-Emitter Voltage, V

-- V ^IT11151

Collector-to-Emitter Voltage, V

-- V ^IT11152

No. A0437-2/5

2SB1739 / 2SD2720

-- V

--3.0

3.0

2SB1739

2SD2720

= --2V

=2V

--2.5

--2.0

--1.5

2.5

2.0

1.5

--1.0

1.0

--0.5

0.5

--0.2

--0.4

--0.6

--0.8

--1.0

--1.2

--1.4

0.2

0.4

0.6

0.8

1.0

1.2

IT11154

Base-to-Emitter Voltage, V

-- V

Base-to-Emitter Voltage, V

-- V

IT11153

-- I

2SB1739

= --2V

2SD2720

V =2V

100

--0.01

--0.1

--1.0

0.01

0.1

1.0

Collector Current, I -- A

IT11155

IT11156

(sat) -- I

CE C

2SB1739

/ I =20

2SD2720

/ I =20

C B

--0.1

0.1

--0.1

--1.0

0.1

1.0

Collector Current, I -- A

IT11157

IT11158

(sat) -- I

BE C

2SB1739

/ I =20

2SD2720

/ I =20

C B

--1.0

1.0

--0.1

0.1

--1.0

1.0

Collector Current, I -- A

IT11159

IT11160

No. A0437-3/5

2SB1739 / 2SD2720

(sat) -- I

CE B

2SB1739

2SD2720

I =2A

I = --2A

--0.1

0.1

--0.1

--1.0

0.1

1.0

IT11161

Base Current, I -- A

IT11162

Base Current, I -- A

(sat) -- I

CE B

--1.0

1.0

2SB1739

2SD2720

I = --2A

I =2A

--1A

--0.5A

0.5A

--0.1

0.1

1.0

--0.01

--0.1

--1.0

0.01

0.1

Base Current, I -- A

Cob -- V^B

IT11163

IT11164

Cob -- V

2SB1739

f=1MHz

2SD2720

f=1MHz

100

0.1

--0.1

--1.0

--10

1.0

Collector-to-Base Voltage, V

-- V

Collector-to-Base Voltage, V

-- V

IT11165

IT11166

-- I

T C

2SB1739

2SD2720

= --2V

=2V

100

0.01

--0.01

--0.1

--1.0

0.1

1.0

Collector Current, I -- A

IT11167

IT11168

No. A0437-4/5

2SB1739 / 2SD2720

-- Ta

A S O

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

2SB1739 / 2SD2720

=5A

I =3A

1.0

0.1

2SB1739 / 2SD2720

Ta=25°C

Single Pulse

Mounted on a ceramic board (250mm²✕0.8mm)

For PNP minus sign is omitted.

0.1

0.01

0.1

100

120

140

160

1.0

Collector-to-Emitter Voltage, V

-- V IT11169

Ambient Temperature, Ta -- °C

IT11170

-- Tc

2SB1739 / 2SD2720

100

120

140

160

IT11171

Case Temperature, Tc -- °C

Specifications of any and all SANYO Semiconductor products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state,

and are not guarantees of the performance, characteristics, and functions of the described products

as mounted in the customer's products or equipment. To verify symptoms and states that cannot be

evaluated in an independent device, the customer should always evaluate and test devices mounted

in the customer's products or equipment.

SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any

and all semiconductor products fail with some probability. It is possible that these probabilistic failures

could give rise to accidents or events that could endanger human lives, that could give rise to smoke or

fire, or that could cause damage to other property. When designing equipment, adopt safety measures

so that these kinds of accidents or events cannot occur. Such measures include but are not limited to

protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO Semiconductor products (including technical data,services) described

or contained herein are controlled under any of applicable local export control laws and regulations, such

products must not be exported without obtaining the export license from the authorities concerned in

accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic

or mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO Semiconductor product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not

guaranteed for volume production. SANYO Semiconductor believes information herein is accurate

and reliable, but no guarantees are made or implied regarding its use or any infringements of

intellectual property rights or other rights of third parties.

This catalog provides information as of August, 2006. Specifications and information herein are subject

to change without notice.

PS No. A0437-5/5

2SD2720(TP-FA) [ONSEMI]

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