2SJ661 [ONSEMI]
P-Channel Power MOSFET;
| 型号： | 2SJ661 |
| 厂家： | 
ONSEMI |
| 描述： | P-Channel Power MOSFET 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：375K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN8586A
2SJ661
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
60V, 38A, 39m , TO-262-3L/TO-263-2L
Features
•
•
ON-resistance R (on)1=29.5m (typ.)
4V drive
Input capacitance Ciss=4360pF (typ.)
Ω
DS
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
--60
±20
--38
--152
1.65
65
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
W
W
Allowable Power Dissipation
P
D
Tc=25°C
Continued on next page.
unit : mm (typ)
unit : mm (typ)
Package Dimensions
Package Dimensions
7537-001
7535-001
2SJ661-1E
2SJ661-DL-1E
4.5
1.3
10.0
8.0
4.5
10.0
8.0
1.3
4
5.3
5.3
0.254
0.5
1.47
1.27
1
2
3
1.27
0.8
0.8
0.5
2.54
2.54
1
2
3
1 : Gate
1 : Gate
2 : Drain
3 : Source
2 : Drain
3 : Source
4 : Drain
2.54
2.54
TO-262-3L
TO-263-2L
Product & Package Information
• Package : TO-262-3L
• Package : TO-263-2L
•
•
JEITA, JEDEC : TO-262
•
•
JEITA, JEDEC : SC-83, TO-263
Minimum Packing Quantity : 800pcs./reel
Minimum Packing Quantity
:
50pcs./magazine
Marking
Packing Type : DL
Electrical Connection
2, 4
J661
1
LOT No.
DL
3
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM/N1805QA MSIM TB-00001078 No.8586-1/9
2SJ 661
Continued from preceding page.
Parameter
Channel Temperature
Symbol
Tch
Tstg
Conditions
Ratings
Unit
°C
150
Storage Temperature
--55 to +150
250
°C
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
mJ
A
AS
I
AV
--38
Note : 1 V =--30V, L=200 H, I =--38A (Fig.1)
*
μ
DD
2 L 200 H, single pulse
AV
*
≤
μ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
--60
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I =--1mA, V =0V
D GS
(BR)DSS
I
V
=--60V, V =0V
--1
A
A
μ
DSS
DS GS
I
V
=±16V, V =0V
±10
μ
GSS
GS DS
V
(off)
|
V
=--10V, I =--1mA
--1.2
18
--2.6
V
GS
yfs
DS D
Forward Transfer Admittance
V
I
=--10V, I =--19A
D
31
S
|
DS
R
R
(on)1
(on)2
=--19A, V =--10V
GS
29.5
40
39
56
m
Ω
Ω
DS
DS
D
Static Drain-to-Source On-State Resistance
I
D
=--19A, V =--4V
GS
m
Input Capacitance
Ciss
4360
470
335
33
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--20V, f=1MHz
pF
pF
ns
DS
t
t
t
t
(on)
d
r
285
295
195
80
ns
See Fig.2
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
ns
Total Gate Charge
Qg
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
DS
=--30V, V =--10V, I =--38A
GS
15
D
12
V
SD
I =--38A, V =0V
S GS
--1.0
--1.2
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
V
IN
V = --30V
DD
L
0V
--10V
≥50Ω
I
= --19A
D
RG
V
IN
R =1.58Ω
L
D
V
OUT
2SJ661
PW=10μs
D.C.≤1%
0V
--10V
V
DD
50Ω
G
2SJ661
P. G
50Ω
S
Ordering Information
Device
Package
Shipping
50pcs./magazine
800pcs./reel
memo
Pb Free
2SJ661-1E
2SJ661-DL-1E
TO-262-3L
TO-263-2L
No.8586-2/9
2SJ 661
I
D
-- V
DS
I
-- V
D GS
--80
--70
--60
--50
--40
--30
--20
--80
--70
--60
--50
--40
--30
--20
Tc=25°C
V
DS
= --10V
--4V
V
= --3V
GS
--10
0
--10
0
0
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
IT08748
0
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Drain-to-Source Voltage, V
DS
-- V
Gate-to-Source Voltage, V
GS
-- V
IT08749
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
70
60
50
40
30
20
70
60
50
40
30
20
I = --19A
D
Tc=75°C
°C
--25
10
0
10
0
--2
--3
--4
--5
--6
--7
--8
--9
--10
--50
--25
0
25
50
75
100
125
150
IT08750
Case Temperature, Tc -- °C
IT08751
Gate-to-Source Voltage, V
-- V
GS
| yfs | -- I
I
-- V
SD
D
S
100
--100
V
=0V
7
V
= --10V
GS
DS
7
5
3
2
5
--10
3
2
7
5
3
2
10
--1.0
7
7
5
5
3
2
--0.1
3
2
7
5
3
2
--0.01
1.0
--0.1
2
3
5
7
2
3
5
7
2
3
5
7
0
--0.3
--0.6
--0.9
--1.2
--1.5
--1.0
--10
--100
IT08752
Diode Forward Voltage, V
SD
Ciss, Coss, Crss -- V
-- V
IT08753
Drain Current, I -- A
D
SW Time -- I
DS
D
1000
10000
V
= --30V
f=1MHz
DD
= --10V
7
5
7
V
GS
Ciss
5
3
2
3
2
100
1000
7
5
7
5
t (on)
d
3
2
3
2
10
--0.1
100
2
3
5
7
2
3
5
7
2
3
5
7
0
--5
--10
--15
--20
--25
--30
--1.0
--10
--100
IT08754
Drain-to-Source Voltage, V
DS
-- V
IT08755
Drain Current, I -- A
D
No.8586-3/9
2SJ 661
A S O
= --152A(PW≤10μs)
V
GS
-- Qg
--10
--9
--8
--7
--6
--5
--4
--3
--2
3
2
V
= --30V
I
I
DS
= --38A
DP
I
D
--100
7
5
= --38A
D
3
2
--10
7
5
3
2
Operation in
this area is
limited by R (on).
--1.0
DS
7
5
3
2
--1
0
Tc=25°C
Single pulse
--0.1
--0.1
2
3
5
7
2
3
5
7
2
3
5
7
0
10
20
30
40
50
60
70
80
--1.0
--10
--100
IT16831
Total Gate Charge, Qg -- nC
IT08756
Drain-to-Source Voltage, V
DS
-- V
P
-- Ta
P
-- Tc
D
D
2.0
70
65
60
1.65
1.5
50
40
30
20
1.0
0.5
0
10
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
IT08735
IT08758
Ambient Temperature, Ta -- °C
Case Temperature, Tc -- °C
No.8586-4/9
2SJ 661
Taping Specification
2SJ661-DL-1E
No.8586-5/9
2SJ 661
Outline Drawing
Land Pattern Example
2SJ661-DL-1E
Mass (g) Unit
Unit: mm
1.5
mm
* For reference
No.8586-6/9
2SJ 661
Magazine Specification
2SJ661-1E
No.8586-7/9
2SJ 661
Outline Drawing
2SJ661-1E
Mass (g) Unit
1.6
mm
* For reference
No.8586-8/9
2SJ 661
Note on usage : Since the 2SJ661 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
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harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
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PS No.8586-9/9
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