2SJ665-TL [ONSEMI]
Power Field-Effect Transistor, 27A I(D), 100V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMP-FD, 3 PIN;
| 型号： | 2SJ665-TL |
| 厂家： | 
ONSEMI |
| 描述： | Power Field-Effect Transistor, 27A I(D), 100V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMP-FD, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN8590
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SJ665
Features
• Low ON-resistance.
•
Ultrahigh-speed switching.
•
4V drive.
•
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
--100
±20
--27
DSS
GSS
Gate-to-Source Voltage
Drain Current (DC)
V
V
I
A
D
Drain Current (Pulse)
I
PW≤10µs, duty cycle≤1%
--108
1.65
65
A
DP
W
W
°C
°C
mJ
A
Allowable Power Dissipation
P
D
Tc=25°C
Channel Temperature
Tch
150
Storage Temperature
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
48
AS
I
--27
AV
Note : *1 V =30V, L=100µH, I =--27A
DD
AV
*2 L≤100µH, Single pulse
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
=--1mA, V =0V
Unit
min
--100
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
V
µA
µA
V
(BR)DSS
D
GS
I
V
V
V
V
=--100V, V =0V
GS
--1
±10
--2.6
DSS
GSS
DS
GS
DS
DS
I
= ±16V, V =0V
DS
V (off)
GS
=--10V, I =--1mA
--1.2
15
D
Forward Transfer Admittance
yfs
=--10V, I =--14A
25
59
75
S
D
R
DS
(on)1
I
=--14A, V =--10V
D GS
77
mΩ
mΩ
Static Drain-to-Source On-State Resistance
R
DS
(on)2
I
=--14A, V =--4V
D GS
105
Marking : J665
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1805QA MS IM TB-00001098 No.8590-1/4
2SJ665
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Input Capacitance
Ciss
Coss
Crss
V
V
V
=--20V, f=1MHz
=--20V, f=1MHz
=--20V, f=1MHz
4200
280
220
30
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
t
r
150
330
135
74
Turn-OFF Delay Time
Fall Time
t (off)
d
t
f
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
=--50V, V =--10V, I =--27A
GS
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
=--50V, V =--10V, I =--27A
GS
12.8
14.7
--0.98
D
=--50V, V =--10V, I =--27A
GS
D
V
SD
I =--27A, V =0V
S GS
--1.2
Package Dimensions
unit : mm
Package Dimensions
unit : mm
7513-002
7001-003
4.5
10.2
4.5
10.2
1.3
1.3
1
2
3
1.2
0.8
0.4
0.8
0 to 0.3
0.4
1.2
2.55
2.55
1
2
3
1 : Gate
1 : Gate
2 : Drain
3 : Source
2 : Drain
3 : Source
2.55
2.55
2.55
2.55
SANYO : SMP-FD
SANYO : SMP
Switching Time Test Circuit
Avalanche Resistance Test Circuit
V
= --50V
DD
V
IN
0V
--10V
L
≥50Ω
RG
I
= --14A
D
V
IN
R =3.57Ω
L
DUT
D
V
OUT
PW=10µs
D.C.≤1%
0V
--10V
V
50Ω
DD
G
2SJ665
P. G
50Ω
S
No.8590-2/4
2SJ665
I
-- V
I
-- V
D GS
D
DS
--60
--50
--40
--30
--20
--60
--50
--40
--30
--20
V = --10V
DS
Tc=25°C
--4V
V
= --3V
--10
0
--10
0
GS
0
--1
--2
--3
--4
--5
--6
--7
IT08790
0
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Drain-to-Source Voltage, V
DS
-- V
Gate-to-Source Voltage, V
GS
-- V
IT08791
R
DS
(on) -- V
R
DS
(on) -- Tc
GS
140
120
100
80
140
120
100
80
I = --14A
D
60
60
--25
°C
40
40
20
0
20
0
--2
--3
--4
--5
--6
--7
--8
--9
--10
--50
--25
0
25
50
75
100
125
150
IT08792
Case Temperature, Tc -- °
C
IT08793
Gate-to-Source Voltage, V
GS
-- V
y
fs -- I
I
-- V
SD
D
S
--100
100
V
= --10V
V
=0V
GS
7
5
DS
7
3
2
5
3
2
--10
7
5
3
2
10
--1.0
7
7
5
5
3
2
3
2
--0.1
7
5
3
2
1.0
7
--0.1
--0.01
2
3
5
7
2
3
5
7
--10
2
3
5
7
0
--0.3
--0.6
--0.9
--1.2
--1.5
IT08795
--1.0
IT08794
Diode Forward Voltage, V
SD
Ciss, Coss, Crss -- V
-- V
Drain Current, I -- A
D
SW Time -- I
DS
D
10000
1000
f=1MHz
V
V
= --50V
DD
GS
7
5
7
= --10V
5
3
2
3
2
100
1000
7
5
7
5
t (on)
d
3
2
3
2
10
--0.1
100
0
--5
--10
--15
--20
--25
--30
IT08797
2
3
5
7
2
3
5
7
2
3
5
7
--1.0
--10
IT08796
Drain-to-Source Voltage, V
DS
-- V
Drain Current, I -- A
D
No.8590-3/4
2SJ665
A S O
V
-- Qg
GS
2
--10
--9
--8
--7
--6
--5
--4
--3
--2
I
= --108A
V
= --50V
≤10µs
DP
DS
--100
I = --27A
D
7
5
I = --27A
D
3
2
--10
7
5
3
2
Operation in
this area is
limited by R (on).
--1.0
7
5
DS
3
2
--1
0
Tc=25°C
Single pulse
--0.1
--0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
0
10
20
30
40
50
60
70
80
--1.0
--10
--100
IT08799
Total Gate Charge, Qg -- nC
IT08798
Drain-to-Source Voltage, V
-- V
DS
P
-- Ta
P
-- Tc
D
D
2.0
70
65
60
1.65
1.5
50
40
30
20
1.0
0.5
0
10
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT08735
Case Temperature, Tc -- °C
IT08758
Note on usage : Since the 2SJ665 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2005. Specifications and information herein are subject
to change without notice.
PS No.8590-4/4
相关型号：
2SJ666-TL
Power Field-Effect Transistor, 36A I(D), 100V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMP-FD, 3 PIN
ONSEMI
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