2SK2394-7-TB-E [ONSEMI]
N 沟道 JFET，15V，6 至 32mA，38mS，CP;
| 型号： | 2SK2394-7-TB-E |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 JFET，15V，6 至 32mA，38mS，CP 放大器 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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N-Channel JFET
15 V, 6 to 32 mA, 38 mS, CP
2SK2394
SC−59−3
318BJ
ELECTRICAL CONNECTION
3
Features
1: Source
2: Drain
3: Gate
• Large ⎪yfs⎪
• Small C
iss
• Small−Sized Package Permitting 2SK2394−Applied Sets to be Made
Small Slim
1
2
• Ultralow Noise Figure
• This is a Pb−Free Device
MARKING DIAGRAM
Applications
• AM Tuner RF Amplifier
• Low−Noise Amplifier
YJ
ABSOLUTE MAXIMUM RATINGS at T = 25°C
A
Symbol
Parameter
Drain−to−Source Voltage
Gate−to−Drain Voltage
Gate Current
Value
Unit
V
YJx
= Specific Device Code
x = 6 or 7
V
15
−15
DSX
GDS
V
V
I
G
10
mA
mA
mW
°C
ORDERING INFORMATION
I
D
Drain Current
50
†
Device
2SK2394−6−TB−E
Package
Shipping
3000 /
Tape & Reel
P
D
Allowable Power Dissipation
Junction Temperature
Storage Temperature
200
SC−59−3
(Pb−Free)
T
J
150
T
stg
−55 to +150
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
March, 2022 − Rev. 3
2SK2394/D
2SK2394
ELECTRICAL CHARACTERISTICS at T = 25°C
A
Ratings
Typ
−
Min
−15
−
Max
−
Symbol
Parameter
Gate−to−Drain Breakdown Voltage
Gate Cutoff Current
Test Conditions
I = −10 mA, V = 0 V
G
Unit
V
V
(BR)GDS
DS
I
V
GS
V
DS
V
DS
V
DS
V
DS
= −10 V, V = 0 V
−
−1.0
−1.0
20
−
nA
V
GSS
DS
V
GS(off)
Cutoff Voltage
= 5 V, I = 100 mA
−0.3
10
20
−
−0.7
−
D
I
Drain Current
= 5 V, V = 0 V
mA
mS
pF
pF
dB
DSS
GS
yfs
Forward Transfer Admittance
Input Capacitance
= 5 V, V = 0 V, f = 1 kHz
38
GS
C
= 5 V, V = 0 V, f = 1 MHz
10.0
2.9
1.0
−
iss
rss
GS
C
Reverse Transfer Capacitance
Noise Figure
−
−
NF
V
= 5 V, R = 1 kW, I = 1 mA,
−
−
DS
g
D
f = 1 kHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
2SK2394
TYPICAL CHARACTERISTICS
20
20
16
V
GS
= 0 V
V
GS
= 0 V
16
−0.1 V
−0.2 V
12
8
12
8
−0.1 V
−0.2 V
−0.3 V
−0.4 V
−0.5 V
−0.6 V
−0.7 V
−0.3 V
−0.4 V
4
4
−0.5 V
−0.6 V
−0.7 V
0
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0
2
4
6
8
10
12
V
DS
, Drain−to−Source Voltage (V)
Figure 2. ID − VDS
V
DS
, Drain−to−Source Voltage (V)
Figure 1. ID − VDS
22
16
14
I
= 20 mA
15 mA
DSS
V
= 5 V
= 15 mA
V
DS
= 5 V
DS
20
18
I
DSS
12
10
16
14
12
10
8
10 mA
6 mA
8
6
T = −25°C
a
75°C
25°C
6
4
2
0
4
2
0
−1.4 −1.2 −1.0 −0.8 −0.6 −0.4 −0.2
0
0.2
−1.2
−1.0
−0.8
−0.6
−0.4
−0.2
0
0.2
V
GS
, Gate−to−Source Voltage (V)
Figure 4. ID − VGS
V
GS
, Gate−to−Source Voltage (V)
Figure 3. ID − VGS
7
5
100
V
= 5 V
V
V
= 5 V
= 0 V
DS
DS
30 mA
f = 1 kHz
GS
7
5
15 mA
f = 1 kHz
3
2
I
= 6 mA
DSS
3
2
10
7
5
3
2
10
3
5
7
1.0
2
3
5
7
10
2
3
5
3
5
7
10
2
3
5
I
, Drain Current (mA)
I , Drain Current (mA)
D
DSS
Figure 5. JyfsJ − ID
Figure 6. JyfsJ − IDSS
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3
2SK2394
TYPICAL CHARACTERISTICS (continued)
2
3
V
= 5 V
= 100 mA
DS
V
GS
= 0 V
2
I
D
f = 1 MHz
1.0
10
7
5
7
5
3
2
3
2
0.1
1.0
3
5
7
10
2
3
5
7
7
1.0
2
3
5
7
10
2
3
V
DS
, Drain−to−Source Voltage (V)
Figure 8. Ciss − VDS
I
, Drain Current (mA)
DSS
Figure 7. VGS(off) − IDSS
10
10
8
V
I
= 5 V
= 1 mA
V
= 0 V
DS
DS
7
5
f = 1 MHz
D
R = 1 kW
g
6
3
2
4
2
0
1.0
7
5
2 3 5 7
2 3 5 7
2 3 5 7
2 3 5 7
7
1.0
2
3
5
7
10
2
3
0.01
0.1
1.0
10
100
f, Frequency (kHz)
V
DS
, Drain−to−Source Voltage (V)
Figure 9. Crss − VDS
Figure 10. NF − f
10
8
240
V
= 5 V
= 1 mA
DS
I
D
200
f = 1 kHz
160
120
80
40
0
6
4
2
0
2 3 5 7
2 3 5 7
2 3 5 7
100
2 3 5 7
1000
0
20
40
60
80
100
120 140 160
0.1
1.0
10
T , Ambient Temperature (5C)
a
R , Signal Source Resistance (kW)
g
Figure 11. NF −Rg
Figure 12. PD − Ta
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−59 / CP3
CASE 318BJ
ISSUE O
DATE 09 JAN 2015
SCALE 2:1
NOTES:
D
A
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3X L
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PRO-
TRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS,
OR GATE BURRS SHALL NOT EXCEED 0.20 PER SIDE.
4. DIMENSIONS D AND E1 ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.10 AND 0.20 FROM THE TIP.
3
E1
E
1
MILLIMETERS
2
DIM
A
A1
A2
b
c
D
E
E1
e
MIN
0.95
0.00
0.20
0.35
0.10
2.75
2.30
1.35
MAX
1.35
0.10
0.40
0.50
0.20
3.05
2.70
1.65
e
3X b
M
0.10
C A
TOP VIEW
SIDE VIEW
A
0.95 BSC
0.35
c
3X
L
0.75
A2
GENERIC
A1
SEATING
PLANE
C
MARKING DIAGRAM
END VIEW
XXX MG
RECOMMENDED
G
SOLDERING FOOTPRINT*
3X
1
3X
0.80
1.00
XXX
M
= Specific Device Code
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
3.40
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON94458F
SC−59 / CP3
PAGE 1 OF 1
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