2SK3738-TL-E [ONSEMI]
N 沟道 JFET，40V，50 至 130uA，0.13mS，SMCP;
| 型号： | 2SK3738-TL-E |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 JFET，40V，50 至 130uA，0.13mS，SMCP |
| 文件： | 总6页 (文件大小：461K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN7671A
2SK3738
N-Channel JFET
http://onsemi.com
40V, 50 to 130 A, 0.13mS, SMCP
μ
Applications
•
Impedance conversion
•
Infrared sensor
Features
•
Small I
GSS
Small Ciss
•
•
Ultrasmall package permitting applied sets to be small and slim
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Symbol
Conditions
Ratings
Unit
V
V
40
DSS
V
--40
V
GDS
I
10
mA
mA
mW
G
Drain Current
I
1
100
D
Allowable Power Dissipation
Junction Temperature
Storage Temperature
P
D
Tj
150
C
C
°
°
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: SMCP
7027A-003
• JEITA, JEDEC
: SC-75, SOT-416
•
Minimum Packing Quantity : 3,000 pcs./reel
2SK3738-TL-E
1.6
Packing Type: TL
Marking
0.3
0.1
3
KB
1
2
TL
0.2
0.5 0.5
Electrical Connection
1 : Source
2 : Drain
3 : Gate
3
SMCP
1
2
Semiconductor Components Industries, LLC, 2013
August, 2013
91212 TKIM/42004GB TSIM TA-100829 No.7671-1/6
2SK3738
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
=--10 A, V =0V
Unit
min
--40
max
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
V
I
V
pA
V
μ
(BR)GDS
G
DS
I
V
=--20V, V =0V
--500
GSS
(off)
GS
DS
=10V, I =1
Cutoff Voltage
V
V
A
μ
--1.5
--2.3
130
GS
DS
D
Drain Current
I
V
=10V, V =0V
DS GS
50
A
μ
DSS
yfs
Forward Transfer Admittance
Input Capacitance
V
=10V, V =0V, f=1kHz
GS
0.06
0.13
1.7
mS
pF
pF
|
|
DS
Ciss
Crss
V
=10V, V =0V, f=1MHz
GS
DS
Reverse Transfer Capacitance
0.7
Ordering Information
Device
Package
SMCP
Shipping
memo
2SK3738-TL-E
3,000pcs./reel
Pb Free
I
D
-- V
I
D
-- V
DS
DS
140
120
100
80
140
120
100
80
60
60
40
20
40
--0.8V
--0.8V
--1.0V
--1.2V
--1.4V
20
0
--1.4V
--1.2V
0
0
0
1
2
3
4
5
4
8
12
16
20
Drain-to-Source Voltage, V
-- V ITR00838
DS
Drain-to-Source Voltage, V
-- V ITR00837
DS
I
D
-- V
I
-- V
GS
GS
D
80
70
160
140
120
100
80
V
I
=10V
V
I
=10V
DS
DS
=50μA
=100μA
DSS
DSS
60
50
40
30
20
60
40
10
0
20
0
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
--2.4
--2.0
--1.6
--1.2
--0.8
--0.4
0
Gate-to-Source Voltage, V
GS
-- V
Gate-to-Source Voltage, V
-- V
GS
ITR00839
ITR00840
No.7671-2/6
2SK3738
V
(off) -- I
⏐yfs⏐ -- I
GS
DSS
DSS
3
2
3
2
V
=10V
V
V
=10V
=0
DS
DS
GS
I =1μA
D
f=1kHz
0.1
--1.0
7
5
7
5
3
5
7
100
2
3
3
5
7
100
2
IT06669
IT06668
Drain Current, I
DSS
-- μA
Drain Current, I -- μA
DSS
P
-- Ta
Ciss -- V
D
DS
10
120
100
V
=0
GS
7
5
f=1MHz
80
60
40
3
2
1.0
7
5
20
0
3
0
20
40
60
80
100
120
140
160
2
3
5
7
2
3
5
7
1.0
10
Ambient Temperature, Ta -- °C
Drain-to-Source Voltage, V
-- V
IT06670
IT06671
DS
Crss -- V
DS
5
V
=0
GS
f=1MHz
3
2
1.0
7
5
3
2
0.1
1.0
2
3
5
7
2
3
5
7
10
Drain-to-Source Voltage, V
-- V
IT06672
DS
No.7671-3/6
2SK3738
Embossed Taping Specification
2SK3738-TL-E
No.7671-4/6
2SK3738
Outline Drawing
Land Pattern Example
2SK3738-TL-E
Mass (g) Unit
Unit: mm
0.003
mm
* For reference
0.7
0.6
0.5 0.5
No.7671-5/6
2SK3738
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PS No.7671-6/6
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