2SK3747-1E [ONSEMI]
N 沟道，功率 MOSFET，1500V，2A，13Ω;
| 型号： | 2SK3747-1E |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，功率 MOSFET，1500V，2A，13Ω 局域网 PC 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN7767B
2SK3747
N-Channel Power MOSFET
http://onsemi.com
Ω
1500V, 2A, 13 , TO-3PF-3L
Features
•
Low ON-resistance, low input capacitance, ultrahigh-speed switching
•
High reliability (Adoption of HVP process)
•
Attachment workability is good by Mica-less package
•
Avalanche resistance guarantee
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
1500
DSS
V
±35
V
GSS
I
2
A
D
Drain Current (Pulse)
I
DP
PW 10 s, duty cycle 1%
4
A
≤
μ
≤
3.0
W
W
Allowable Power Dissipation
P
D
Tc=25 C
50
°
Channel Temperature
Tch
150
C
C
°
°
Storage Temperature
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
41
2
mJ
A
AS
I
AV
Note : 1 V =50V, L=20mH, I =2A (Fig.1)
*
DD
2 L 20mH, single pulse
AV
*
≤
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: TO-3PF-3L
7538A-002
• JEITA, JEDEC
: SC-94
• Minimum Packing Quantity : 30 pcs./magazine
5.5
15.5
3.6
2SK3747-1E
Marking
Electrical Connection
3.0
2
K3747
LOT No.
2.0
2.0
1
2.0
4.0
0.9
0.75
3
1
2
3
1 : Gate
2 : Drain
3 : Source
5.45
5.45
TO-3PF-3L
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM TC-00002763/62005QB MSIM TB-00001301 / 81004QB TSIM TB-00000018 No.7767-1/7
2SK3747
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
1500
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
V
μA
μA
V
(BR)DSS
D
GS
=1200V, V =0V
I
I
V
V
V
V
100
DSS
DS
GS
DS
DS
GS
=16V, V =0V
DS
±10
3.5
GSS
V
(off)
GS
=10V, I =1mA
2.5
0.7
D
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
| yfs |
(on)
=20V, I =1A
1.4
S
D
R
I
=1A, V =10V
D GS
10
380
70
13
Ω
DS
Ciss
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Coss
Crss
V
=30V, f=1MHz
DS
Reverse Transfer Capacitance
Turn-ON Delay Time
40
t (on)
12
d
Rise Time
t
37
r
See Fig.2
Turn-OFF Delay Time
t (off)
152
59
d
Fall Time
t
f
Total Gate Charge
Qg
37.5
2.7
20
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=200V, V =10V, I =2A
GS
DS
D
V
I =2A, V =0V
GS
0.88
1.2
SD
S
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
V
V
=200V
IN
DD
L
10V
0V
≥50Ω
I
=1A
D
V
R =200Ω
IN
L
2SK3747
D
V
10V
0V
OUT
V
50Ω
PW=10μs
D.C.≤0.5%
DD
G
2SK3747
P.G
S
R
=50Ω
GS
Ordering Information
Device
Package
Shipping
memo
2SK3747-1E
TO-3PF-3L
30pcs./magazine
Pb Free
No.7767-2/7
2SK3747
I
D
-- V
I
D
-- V
DS
GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
3.0
2.5
2.0
1.5
1.0
Tc=25°C
pulse
V =20V
DS
pulse
Tc= --25°C
25°C
75°C
6V
5V
0.5
0
0.5
0
V
=4V
GS
0
0
3
5
2
5
10
15
20
25
30
35
40
45
50
0
2
4
6
8
10
12
14
16
18
20
Drain-to-Source Voltage, V
-- V
IT07130
Gate-to-Source Voltage, V -- V
GS
IT07131
DS
GS
R
(on) -- V
R
(on) -- Tc
DS
DS
30
25
20
15
10
30
25
20
15
10
I =1A
V
I =1A
D
D
=10V
GS
Tc=75°C
25°C
--25°C
5
0
5
0
4
6
8
10
12
14
16
18
20
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, V
-- V
IT07132
Case Temperature, Tc -- °C
IT07133
GS
| yfs | -- I
I
-- V
SD
D
S
5
10
7
5
V
=20V
V
=0V
DS
GS
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
7
5
3
2
3
2
0.01
0.2
0.1
5
7
2
3
5
7
2
3
0.4
0.6
0.8
1.0
1.2
0.1
1.0
Drain Current, I -- A
IT07134
IT07135
Diode Forward Voltage, V
SD
Ciss, Coss, Crss -- V
DS
-- V
D
SW Time -- I
D
5
f=1MHz
V
=200V
=10V
DD
3
2
V
GS
3
2
1000
7
5
100
7
3
2
5
100
7
5
3
2
3
2
t (on)
d
10
0.1
10
0
5
10
15
20
25
30
35
40
45
50
2
3
5
7
2
3
1.0
Drain Current, I -- A
IT09038
IT09037
Drain-to-Source Voltage, V
-- V
D
DS
No.7767-3/7
2SK3747
V
-- Qg
A S O
GS
10
9
7
5
V
=200V
I
=4A(PW
≤
10μs)
DS
DP
I =2A
D
3
2
I =2A
D
8
1.0
7
7
5
6
3
2
5
4
Operation in this area
is limited by R (on).
0.1
7
5
3
DS
2
3
2
1
0
Tc=25°C
Single pulse
0.01
1.0
0
10
20
30
40
IT07138
2
3
5
7
2
3
5
7
2
3
5
7
2 3
1000
IT07139
10
100
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V
-- V
DS
P
-- Ta
P
-- Tc
D
D
3.5
3.0
2.5
2.0
1.5
1.0
60
50
40
30
20
10
0
0.5
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT07140
IT07141
Case Temperature, Tc -- °C
No.7767-4/7
2SK3747
Magazine Specification
2SK3747-1E
No.7767-5/7
2SK3747
Outline Drawing
2SK3747-1E
Mass (g) Unit
5.5
mm
* For reference
No.7767-6/7
2SK3747
Note on usage : Since the 2SK3747 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.7767-7/7
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