2SK3796-2 [ONSEMI]
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, SMCP, 3 PIN;型号: | 2SK3796-2 |
厂家: | ONSEMI |
描述: | Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, SMCP, 3 PIN |
文件: | 总4页 (文件大小:52K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : EN8636
SANYO Sem iconductors
DATA S HEET
N-Channel Junction Silicon FET
Low-Frequency General-Purpose Amplifier,
Impedance Converter Applications
2SK3796
Applicatins
• Low-frequency general-purpose amplifier, impedance conversion, analog switches applications.
Features
• Small I
.
GSS
•
Small Ciss
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
30
--30
10
DSX
Gate-to-Drain Voltage
Gate Current
V
V
GDS
I
G
mA
mA
mW
°C
Drain Current
I
10
D
Allowable Power Dissipation
Junction Temperature
Storage Temperature
P
100
150
D
Tj
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
=--10µA, V =0V
Unit
min
--30
max
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
V
nA
V
(BR)GDS
G
DS
I
V
=--20V, V =0V
DS
--1.0
--2.2
GSS
(off)
GS
DS
V
V
=10V, I =1µA
--0.18
--0.95
GS
D
Marking : K
Continued on next page.
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"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32207GB TI IM TC-00000609 No.8636-1/4
2SK3796
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
0.6*
3.0
max
6.0*
Drain Current
I
V
V
V
V
V
=10V, V =0V
mA
mS
pF
pF
Ω
DSS
DS
DS
DS
DS
DS
GS
Forward Transfer Admittance
Input Capacitance
yfs
=10V, V =0V, f=1kHz
6.5
GS
Ciss
Crss
=10V, V =0V, f=1MHz
GS
4
1.1
Reverse Transfer Capacitance
Static Drain-to-Source On-State Resistance
=10V, V =0V, f=1MHz
GS
R
DS
(on)
=10mV, V =0V
GS
200
* : The 2SK3796 is classified by I
as follows : (unit : mA).
DSS
Rank
2
3
4
I
0.6 to 1.5
1.2 to 3.0
2.5 to 6.0
DSS
Package Dimensions
unit : mm (unit)
7027-003
1.6
0.8
0.4
0.4
1
2
3
1 : Source
2 : Drain
3 : Gate
0.1 MIN
SANYO : SMCP
I
-- V
I
-- V
D
DS
D
DS
5.0
4.0
3.0
5
4
V =0V
GS
V =0V
GS
3
--0.1V
--0.1V
2.0
1.0
0
2
1
0
--0.2V
--0.3V
--0.4V
--0.2V
--0.3V
--0.4V
0
1.0
2.0
3.0
4.0
5.0
0
5
10
15
20
25
30
Drain-to-Source Voltage, V
-- V ITR00633
Drain-to-Source Voltage, V
DS
-- V ITR00634
DS
I
-- V
I
-- V
D
GS
D
GS
8
6
4
2
0
5
4
V
=10V
V
=10V
DS
DS
3
2
1
0
--1.50
--1.25
--1.00
--0.75
--0.50
--0.25
0
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
Gate-to-Source Voltage, V
-- V
ITR00635
Gate-to-Source Voltage, V
GS
-- V
ITR00636
GS
No.8636-2/4
2SK3796
V
(off) -- I
y
fs -- I
D
GS
DSS
5
2
V
=10V
V
=10V
=1.0µA
DS
DS
f=1kHz
I
D
10
3
2
7
5
3
2
--1.0
7
5
1.0
7
5
3
2
3
2
5
7
2
3
5
7
2
2
3
5
7
2
3
5
7
10
2
3
0.1
1.0
10
1.0
Drain Current, I
-- mA
ITR00637
Drain Current, I -- mA
ITR00638
DSS
D
I
-- V
yfs -- I
GDL
DS
DSS
100n
3
2
V
V
=10V
=0V
DS
GS
I
3
GDL
I
D
D
S
f=1kHz
10n
G
DC
3
DC
10
1n
7
5
3
100p
3
3
2
10p
3
1p
I
=1mA
D
5
1.0
5
7
0
7
2
3
5
7
2
ITR00639
0
5
10
15
20
25
1.0
10
Drain Current, I
-- mA
Drain-to-Source Voltage, V
DS
-- V ITR00640
DSS
Ciss -- V
Crss -- V
DS
DS
5
10
V
=0V
f=1MHz
V
=0V
GS
GS
7
5
f=1MHz
3
2
3
2
10
7
5
1.0
7
5
3
2
3
2
1.0
2
3
5
7
2
3
5
7
7
2
3
5
7
2
3
5
7
1.0
10
1.0
10
Drain-to-Source Voltage, V
-- V ITR00641
Drain-to-Source Voltage, V
-- V ITR00642
DS
DS
P
-- Ta
D
120
100
80
60
40
20
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
ITR00646
No.8636-3/4
2SK3796
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of March, 2007. Specifications and information herein are subject
to change without notice.
PS
No.8636-4/4
相关型号:
2SK3796-4
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, SMCP, 3 PIN
ONSEMI
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