30C02CH-TL-E [ONSEMI]
双极晶体管，30V 0.7A，低饱和压，NPN 单 CPH3;
| 型号： | 30C02CH-TL-E |
| 厂家： | 
ONSEMI |
| 描述： | 双极晶体管，30V 0.7A，低饱和压，NPN 单 CPH3 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：578K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN7363A
30C02CH
Bipolar Transistor
http://onsemi.com
( )
sat NPN Single CPH3
30V, 0.7A, Low V
CE
Applications
•
Low-frequency Amplifier, high-speed switching, small motor drive
Features
•
•
•
•
Large current capacity
Low collector-to-emitter saturation voltage (resistance) R (sat) typ.=330m [I =0.7A, I =35mA]
Ω
CE
Ultrasmall package facilitates miniaturization in end products
Small ON-resistance (Ron)
C
B
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
40
30
CBO
V
V
CEO
V
5
V
EBO
I
C
700
1.4
700
150
mA
A
Collector Current (Pulse)
Collector Dissipation
I
CP
P
Mounted on a ceramic board (600mm2×0.8mm)
mW
C
Junction Temperature
Storage Temperature
Tj
C
C
°
°
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: CPH3
7015A-003
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
30C02CH-TL-E
Packing Type: TL
Marking
2.9
0.15
0.05
3
TL
1
2
0.95
1 : Base
0.4
Electrical Connection
2 : Emitter
3 : Collector
3
CPH3
1
2
Semiconductor Components Industries, LLC, 2013
August, 2013
80812 TKIM/O2203 TSIM TA-100140 No.7363-1/6
30C02CH
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
100
Collector Cutoff Current
Emitter Cutoff Current
I
V
=30V, I =0A
nA
nA
CBO
CB
E
I
V
EB
=4V, I =0A
100
800
EBO
C
DC Current Gain
h
V
CE
=2V, I =50mA
300
FE
C
Gain-Bandwidth Product
Output Capacitance
f
V
=10V, I =50mA
540
3.3
85
MHz
pF
mV
V
T
CE C
Cob
V
CB
=10V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
V
(sat)
(sat)
I
C
=200mA, I =10mA
190
1.2
CE
B
V
I
C
=200mA, I =10mA
0.9
BE
B
V
I
C
=10 A, I =0A
40
30
5
V
μ
(BR)CBO
E
V
I
C
=1mA, R
=
V
∞
(BR)CEO
BE
V
I =10 A, I =0A
E
V
μ
(BR)EBO
C
t
t
t
35
255
40
ns
on
Storage Time
See specified Test Circuit.
ns
stg
f
Fall Time
ns
Switching Time Test Circuit
I
B1
PW=20μs
D.C.≤1%
OUTPUT
I
B2
INPUT
R
B
V
R
R
L
50Ω
+
+
220μF
470μF
V
= --5V
V
=12V
CC
BE
I =20I = --20I =300mA
C B1 B2
Ordering Information
Device
Package
CPH3
Shipping
memo
30C02CH-TL-E
3,000pcs./reel
Pb Free
I
-- V
BE
I
-- V
CE
C
C
700
600
500
400
300
200
800
700
600
500
400
300
200
100
V
=2V
CE
400μA
200μA
100
0
I =0
B
0
0
0.2
0.4
0.6
0.8
1.0
0
100 200 300 400 500 600 700 800 900 1000
Collector-to-Emitter Voltage, V
CE
-- mV
Base-to-Emitter Voltage, V
BE
-- V
IT05083
IT05082
No.7363-2/6
30C02CH
h
FE
-- I
V
(sat) -- I
CE
C
C
1000
1000
I
/ I =20
B
V
=2V
7
5
C
CE
7
3
2
5
100
7
5
3
2
3
2
10
7
5
3
2
100
1.0
1.0
1.0
2
3
5
7
2
3
5
7
2
2
2
3
5
7
2
2
2
3
3
3
5
5
5
7
2
3
5
7
2
3
5 7
1000
10
100
1000
10
100
Collector Current, I -- mA
Collector Current, I -- mA
C
IT05084
IT05085
C
V
(sat) -- I
V
(sat) -- I
CE
C
BE
C
1000
10
I
/ I =20
B
I
/ I =50
B
C
C
7
7
5
5
3
2
3
2
1.0
100
7
5
7
5
3
2
3
2
10
1.0
0.1
1.0
2
3
5
7
2
3
5
7
3
5
7
7
2
3
5
7
2
3
5
7
1000
10
100
1000
IT05086
10
100
Collector Current, I -- mA
Collector Current, I -- mA
IT05087
C
C
Cob -- V
f
-- I
CB
T
C
1000
10
f=1MHz
V
=10V
CE
7
7
5
5
3
2
3
2
1.0
1.0
100
1.0
2
3
5
7
3
5
7
2
3
5
7
2
3
5 7
1000
IT05089
10
10
100
Collector-to-Base Voltage, V
CB
-- V
IT05088
Collector Current, I -- mA
C
Ron -- I
P
-- Ta
C
B
1kΩ
10
800
700
600
500
400
300
200
f=1MHz
7
OUT
IN
5
1kΩ
3
2
I
B
1.0
7
5
3
2
100
0
0.1
0.1
2
3
2
3
0
20
40
60
80
100
120
140
160
5
7
5
7
1.0
10
Base Current, I -- mA
IT06793
Ambient Temperature, Ta -- °C
IT05091
B
No.7363-3/6
30C02CH
Embossed Taping Specification
30C02CH-TL-E
No.7363-4/6
30C02CH
Outline Drawing
Land Pattern Example
30C02CH-TL-E
Mass (g) Unit
Unit: mm
0.013
mm
* For reference
0.6
0.95
0.95
No.7363-5/6
30C02CH
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PS No.7363-6/6
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Bipolar Transistor, 30V, 0.7A, Low VCE(sat), NPN Single MCPH3, SC 70FL / MCPH3, 3000-REEL
ONSEMI
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