3LP01M-TL-H [ONSEMI]
小信号 MOSFET,-30V,-100mA,10.4Ω,单 P 沟道,MCP3;型号: | 3LP01M-TL-H |
厂家: | ONSEMI |
描述: | 小信号 MOSFET,-30V,-100mA,10.4Ω,单 P 沟道,MCP3 |
文件: | 总6页 (文件大小:259K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : EN6139D
3LP01M
P-Channel Small Signal MOSFET
http://onsemi.com
–
–
Ω
30V, 0.1A, 10.4 , Single MCP
Features
•
Low ON-resistance
•
•
High-speed switching
2.5V drive
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
--30
Unit
V
V
DSS
V
±10
V
GSS
I
--0.1
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW 10 s, duty cycle 1%
--0.4
A
≤
μ
≤
DP
P
0.15
W
°C
°C
D
Tch
150
Tstg
--55 to +150
This product is designed to “ESD immunity < 200V ”, so please take care when handling.
*
Machine Model
*
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Ordering & Package Information
Device
Package
Shipping
memo
7023A-010
MCP
SC-70,TO-323
3,000
pcs./reel
3LP01M-TL-E
Pb-Free
3LP01M-TL-E
3LP01M-TL-H
2.0
0.15
Pb-Free
and
Halogen Free
3
MCP
SC-70,TO-323
3,000
pcs./reel
3LP01M-TL-H
0 to 0.08
Packing Type: TL
Marking
1
2
0.65
0.3
LOT No.
XA
LOT No.
TL
1 : Gate
2 : Source
3 : Drain
Electrical Connection
MCP
3
1
2
Semiconductor Components Industries, LLC, 2013
June, 2013
62613 TKIM TC-00002945/71112 TKIM/40908 TIIM TC-00001304/ No.6139-1/6
32406PE MSIM TB-00002153/90100 TSIM TA-2006
3LP01M
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
--30
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V
I
= --1mA, V =0V
(BR)DSS
D GS
I
V
V
= --30V, V =0V
--1
A
A
μ
DSS
DS
GS
I
=±8V, V =0V
DS
±10
μ
GSS
GS
V
(off)
|
V
= --10V, I = --100
A
μ
--0.4
80
--1.4
V
GS
yfs
DS D
Forward Transfer Admittance
V
= --10V, I = --50mA
D
110
8
mS
Ω
|
DS
R
R
R
(on)1
(on)2
(on)3
I
= --50mA, V = --4V
D GS
10.4
15.4
54
DS
DS
DS
Static Drain to Source On-State Resistance
I
D
= --30mA, V = --2.5V
GS
11
Ω
I
D
= --1mA, V = --1.5V
GS
27
Ω
Input Capacitance
Ciss
7.5
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
= --10V, f=1MHz
5.7
DS
1.8
t
t
t
t
(on)
24
d
r
55
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
120
130
1.43
0.18
0.25
--0.83
d
f
Total Gate Charge
Qg
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
DS
= --10V, V = --10V, I = --100mA
GS
D
V
SD
I = --100mA, V =0V
S GS
--1.2
Switching Time Test Circuit
V
= --15V
DD
V
IN
0V
I
= --50mA
L
--4V
D
V
R =300Ω
IN
PW=10μs
D.C.≤1%
D
V
OUT
G
3LP01M
P.G
50Ω
S
No.6139-2/6
3LP01M
I
D
-- V
DS
I
D
-- V
GS
--0.20
--0.18
--0.16
--0.14
--0.12
--0.10
--0.08
--0.06
--0.04
--0.10
--0.09
--0.08
V
= --10V
--3.5V
DS
--2.0V
25°C
--0.07
--0.06
--0.05
--0.04
--0.03
--0.02
V
= --1.5V
GS
--0.01
0
--0.02
0
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
Drain to Source Voltage, V
-- V
IT00077
Gate to Source Voltage, V -- V
GS
IT00078
DS
R
(on) -- V
R
(on) -- I
DS
GS
DS D
100
30
25
20
15
10
V
= --4V
Ta=25°C
GS
7
5
3
2
25°C
Ta=75°C
--25°C
10
--50mA
7
5
I
D
= --30mA
3
2
5
0
1.0
2
3
5
7
2
3
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
--0.01
--0.1
Gate to Source Voltage, V
GS
-- V
IT00079
Drain Current, I -- A
IT00080
D
R
(on) -- I
R (on) -- I
DS D
DS
D
1000
100
V
= --2.5V
V
= --1.5V
GS
GS
7
5
7
5
3
2
3
2
25°C
Ta=75°C
--25°C
100
10
7
5
7
5
25°C
Ta=75°C
3
2
3
2
--25°C
1.0
--0.01
10
--0.1
2
3
5
7
2
3
2
3
5
7
2
3
--0.1
--1.0
IT00081
Drain Current, I -- mA
D
IT00082
Drain Current, I -- A
D
R
(on) -- Ta
| yfs | -- I
DS
D
1.0
18
16
V
= --10V
DS
7
5
14
12
10
8
3
2
25°C
0.1
7
5
6
3
2
4
2
0.01
--0.01
2
3
5
7
2
3
--60 --40 --20
0
20
40
60
80 100 120 140 160
--0.1
IT00083
IT00084
Ambient Temperature, Ta -- °C
Drain Current, I -- A
D
No.6139-3/6
3LP01M
I
S
-- V
SW Time -- I
D
SD
1000
3
2
V
=0V
V
V
= --15V
GS
DD
= --4V
7
GS
5
3
2
t
--0.1
f
7
5
t (off)
d
100
7
5
t
3
2
r
3
2
t (on)
d
--0.01
--0.5
10
--0.01
2
3
5
7
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
IT00085
--0.1
IT00086
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
D
Ciss, Coss, Crss -- V
V
-- Qg
GS
DS
--10
100
V
= --10V
= --0.1A
f=1MHz
DS
7
5
--9
--8
--7
I
D
3
2
--6
--5
--4
--3
--2
10
Ciss
7
5
Coss
3
2
Crss
--1
0
1.0
0
--5
--10
--15
--20
--25
--30
IT00087
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Drain to Source Voltage, V
DS
-- V
Total Gate Charge, Qg -- nC
IT00088
P
-- Ta
D
0.20
0.15
0.10
0.05
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT02381
No.6139-4/6
3LP01M
Outline Drawing
Land Pattern Example
3LP01M-TL-E, 3LP01M-TL-H
Mass (g) Unit
Unit: mm
0.006
mm
* For reference
0.7
0.65 0.65
No.6139-5/6
3LP01M
Note on usage : Since the 3LP01M is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.6139-6/6
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