5LP01M-TL-H [ONSEMI]
小信号 MOSFET,-50V,-0.07A,23Ω,单 P 沟道,MCP3;型号: | 5LP01M-TL-H |
厂家: | ONSEMI |
描述: | 小信号 MOSFET,-50V,-0.07A,23Ω,单 P 沟道,MCP3 |
文件: | 总6页 (文件大小:259K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : EN6135C
5LP01M
P-Channel Small Signal MOSFET
http://onsemi.com
–
–
Ω
50V, 0.07A, 23 , Single MCP
Features
•
Low ON-resistance
•
•
•
Ultrahigh-speed switching
1.5V drive
Halogen free compliance
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
--50
Unit
V
V
DSS
V
±10
V
GSS
I
--0.07
--0.28
0.15
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
P
W
°C
°C
D
Tch
150
Tstg
--55 to +150
This product is designed to “ESD immunity < 200V ”, so please take care when handling.
*
Machine Model
*
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Ordering & Package Information
Package Dimensions
unit : mm (typ)
Device
Package
Shipping
memo
7023A-010
MCP
SC-70, SOT-323
3,000
pcs./reel
5LP01M-TL-E
Pb-Free
Pb-Free
and
Halogen Free
5LP01M-TL-E
5LP01M-TL-H
2.0
MCP
SC-70, SOT-323
3,000
pcs./reel
0.15
5LP01M-TL-H
3
0 to 0.08
Packing Type: TL
Marking
1
2
LOT No.
0.65
0.3
XB
LOT No.
TL
1 : Gate
2 : Source
3 : Drain
Electrical Connection
3
MCP
1
2
Semiconductor Components Industries, LLC, 2013
July, 2013
72413 TKIM TC-00002970/71112 TKIM/42006PE MSIM TB-00002113/31000 TS (KOTO) TA-2040 No.6135-1/6
5LP01M
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
--50
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V
I
= --1mA, V =0V
(BR)DSS
D GS
I
V
V
= --50V, V =0V
--1
A
A
μ
DSS
DS
GS
I
=±8V, V =0V
DS
±10
μ
GSS
GS
V
(off)
|
V
= --10V, I = --100
A
μ
--0.4
70
--1.4
V
GS
yfs
DS D
Forward Transfer Admittance
V
= --10V, I = --40mA
D
100
18
mS
Ω
|
DS
R
R
R
(on)1
(on)2
(on)3
I
= --40mA, V = --4V
D GS
23
28
60
DS
DS
DS
Static Drain to Source On-State Resistance
I
D
= --20mA, V = --2.5V
GS
20
Ω
I
D
= --5mA, V = --1.5V
GS
30
Ω
Input Capacitance
Ciss
7.4
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
= --10V, f=1MHz
4.2
DS
1.3
t
t
t
t
(on)
20
d
r
35
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
160
150
1.40
0.16
0.23
--0.85
d
f
Total Gate Charge
Qg
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
DS
= --10V, V = --10V, I = --70mA
GS
D
V
SD
I = --70mA, V =0V
S GS
--1.2
Switching Time Test Circuit
V
= --25V
DD
V
IN
0V
--4V
I
= --40mA
L
D
V
R =625Ω
IN
PW=10μs
D.C.≤1%
D
V
OUT
G
5LP01M
P.G
50Ω
S
No.6135-2/6
5LP01M
I
D
-- V
DS
I
D
-- V
GS
--0.14
--0.07
--0.06
--0.05
V
= --10V
DS
--0.12
--0.10
--0.04
--0.08
--0.06
--0.04
--0.03
--0.02
V
= --1.5V
GS
--0.01
0
--0.02
0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
IT00090
Drain to Source Voltage, V
-- V
Gate to Source Voltage, V -- V
GS
IT00091
DS
R
(on) -- V
R
(on) -- I
DS D
DS
GS
40
35
5
V
= --4V
Ta=25°C
GS
3
2
30
25
Ta=75°C
25°C
I = --40mA
--20mA
D
20
--25°C
15
10
10
--0.01
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
2
2
2
3
5
7
2
3
--0.1
Gate to Source Voltage, V
GS
-- V
IT00092
Drain Current, I -- A
D
IT00093
R
(on) -- I
R
(on) -- I
DS
D
DS
D
7
5
7
5
V
= --1.5V
V
= --2.5V
GS
GS
3
2
Ta=75°C
25°C
Ta=75°C
3
2
100
7
--25°C
25°C
5
--25°C
3
2
10
--0.01
10
--0.001
2
3
5
7
2
3
3
5
7
2
3
--0.1
--0.01
IT00094
IT00095
Drain Current, I -- A
Drain Current, I -- A
D
D
R
DS
(on) -- Ta
| yfs | -- I
D
40
5
V
= --10V
DS
3
2
35
30
0.1
25
20
7
5
3
2
15
10
0.01
--0.01
3
5
7
2
3
--60 --40 --20
0
20
40
60
80 100 120 140 160
IT00096
--0.1
Ambient Temperature, Ta -- °C
Drain Current, I -- A
IT00097
D
No.6135-3/6
5LP01M
I
S
-- V
SD
SW Time -- I
D
1000
3
2
V
V
= --25V
= --4V
V
=0V
DD
GS
GS
7
5
3
2
t
f
--0.1
t (off)
d
7
5
100
7
5
t
3
2
r
3
2
t (on)
d
--0.01
--0.5
10
--0.01
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
--1.2
IT00098
2
3
5
7
--0.1
IT00099
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
D
V
-- Qg
Ciss, Coss, Crss -- V
DS
GS
--10
100
V
= --10V
f=1MHz
DS
7
5
--9
--8
--7
I = --70mA
D
3
2
10
Ciss
7
5
--6
--5
--4
--3
--2
Coss
3
2
Crss
1.0
7
5
3
2
--1
0
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
--5
--10 --15 --20 --25 --30 --35
--40 --45
--50
Drain to Source Voltage, V
DS
-- V
Total Gate Charge, Qg -- nC
IT00100
IT00101
P
-- Ta
D
0.20
0.15
0.10
0.05
0
0
20
40
60
80
100
120
140
160
IT00102
Ambient Temperature, Ta -- °C
No.6135-4/6
5LP01M
Outline Drawing
Land Pattern Example
5LP01M-TL-E, 5LP01M-TL-H
Mass (g) Unit
Unit: mm
0.006
mm
* For reference
0.7
0.65 0.65
No.6135-5/6
5LP01M
Note on usage : Since the 5LP01M is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.6135-6/6
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