5Q85-D45H11 [ONSEMI]
Power Bipolar Transistor, PNP, 10 A, 80 V;型号: | 5Q85-D45H11 |
厂家: | ONSEMI |
描述: | Power Bipolar Transistor, PNP, 10 A, 80 V 晶体管 功率双极晶体管 |
文件: | 总4页 (文件大小:106K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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by D44H/D
SEMICONDUCTOR TECHNICAL DATA
. . . for general purpose power amplification and switching such as output or driver
stages in applications such as switching regulators, converters and power amplifiers.
*Motorola Preferred Device
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 80 VOLTS
•
Low Collector–Emitter Saturation Voltage
= 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
V
CE(sat)
•
•
Complementary Pairs Simplifies Designs
MAXIMUM RATINGS
D44H or D45H
Rating
Collector–Emitter Voltage
Emitter Base Voltage
Symbol
Unit
Vdc
Vdc
Adc
8
10, 11
80
V
CEO
60
V
EB
5.0
Collector Current — Continuous
— Peak (1)
I
C
10
20
Total Power Dissipation
P
Watts
C
D
@ T = 25 C
50
1.67
C
@ T = 25 C
A
CASE 221A–06
TO–220AB
Operating and Storage Junction
Temperature Range
T , T
J
–55 to 150
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
2.5
75
Unit
C/W
C/W
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
R
θJC
θJA
Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds
(1) Pulse Width 6.0 ms, Duty Cycle 50%.
T
L
275
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
J
Characteristic
Symbol
Min
Max
Unit
DC Current Gain
D44H10
D45H10
h
FE
35
—
—
—
—
—
(V
CE
= 1.0 Vdc, I = 2.0 Adc)
C
60
20
40
D44H8,11
D44H8,11
(V
CE
= 1.0 Vdc, I = 4.0 Adc)
D44H10
D45H10
C
D44H8,11
D45H8,11
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collector Cutoff Current
I
—
—
—
—
10
µA
µA
CES
(V
CE
= Rated V = 0)
, V
CEO BE
Emitter Cutoff Current
(V = 5.0 Vdc)
I
100
EBO
EB
ON CHARACTERISTICS
Collector–Emitter Saturation Voltage
(I = 8.0 Adc, I = 0.4 Adc)
V
V
Vdc
Vdc
CE(sat)
D44H/D45H8,11
D44H/D45H10
—
—
—
—
1.0
1.0
C
B
(I = 8.0 Adc, I = 0.8 Adc)
C
B
Base–Emitter Saturation Voltage
(I = 8.0 Adc, I = 0.8 Adc)
—
—
1.5
BE(sat)
C
B
DYNAMIC CHARACTERISTICS
Collector Capacitance
C
f
pF
cb
(V
CB
= 10 Vdc, f
test
= 1.0 MHz)
D44H Series
D45H Series
—
—
130
230
—
—
Gain Bandwidth Product
(I = 0.5 Adc, V = 10 Vdc, f = 20 MHz)
MHz
T
D44H Series
D45H Series
—
—
50
40
—
—
C
CE
SWITCHING TIMES
Delay and Rise Times
t
d
+ t
ns
ns
ns
r
(I = 5.0 Adc, I = 0.5 Adc)
D44H Series
D45H Series
—
—
300
135
—
—
C
B1
Storage Time
t
s
(I = 5.0 Adc, I = I = 0.5 Adc)
D44H Series
D45H Series
—
—
500
500
—
—
C
B1 B2
Fall Time
(I = 5.0 Adc, I = 102 = 0.5 Adc)
C B1
t
f
D44H Series
D45H Series
—
—
140
100
—
—
100
50
30
20
1.0 ms
100 µs
10
10
µs
5.0
3.0
2.0
T
≤
70
° C
dc
C
1.0 µs
DUTY CYCLE
≤
50%
1.0
0.5
0.3
0.2
D44H/45H8
D44H/45H10,11
0.1
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 1. Maximum Rated Forward Bias
Safe Operating Area
2
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
1
2
3
U
H
L
R
J
V
G
T
U
V
D
N
Z
0.080
2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
3
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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D44H/D
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