74LVC06ADTR2G [ONSEMI]
Low-Voltage CMOS Hex Inverter;
| 型号： | 74LVC06ADTR2G |
| 厂家： | 
ONSEMI |
| 描述： | Low-Voltage CMOS Hex Inverter 光电二极管 逻辑集成电路 |
| 文件： | 总7页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
74LVC06A
Low-Voltage CMOS Hex
Inverter with Open Drain
Outputs
With 5 V − Tolerant Inputs
www.onsemi.com
The 74LVC06A is a high performance hex inverter operating from a
1.2 V to 5.5 V supply. High impedance TTL compatible inputs
significantly reduce current loading to input drivers. These LCX
devices have open drain outputs which provide the ability to set output
MARKING
DIAGRAMS
levels, or do active−HIGH AND or active−LOW OR functions. A V
specification of 5.5 V allows 74LVC06A inputs to be safely driven
from 5.0 V devices.
I
14
SOIC−14
D SUFFIX
CASE 751A
LVC06A
AWLYWW
14
1
Features
1
• Designed for 1.2 V to 5.5 V V Operation
CC
14
• 5.0 V Tolerant Inputs/Outputs
• 32 mA Output Sink Capability
• Near Zero Static Supply Current (10 mA) Substantially Reduces
LVC
06A
TSSOP−14
DT SUFFIX
CASE 948G
System Power Requirements
14
• Latchup Performance Exceeds 250 mA
• Wired−OR, Wired−AND
ALYWG
1
G
• Output Level Can Be Set Externally Without Affecting Speed of
1
Device
A
= Assembly Location
WL, L = Wafer Lot
Y = Year
• Functionally Compatible with LCX05
• ESD Performance:
Human Body Model >2000 V;
Machine Model >200 V
WW, W = Work Week
G or G = Pb−Free Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note: Microdot may be in either location)
Compliant
V
A3
O3
12
A4
O4
A5
O5
CC
ORDERING INFORMATION
See detailed ordering and shipping information in the package
14
13
11
10
9
8
dimensions section on page 2 of this data sheet.
1
2
3
4
5
6
7
A0
O0
A1
O1
A2
O2 GND
Figure 1. Pinout: 14−Lead (Top View)
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
December, 2015 − Rev. 0
74LVC06A/D
74LVC06A
1
2
4
*
*
*
*
*
*
Table 1. PIN NAMES
A0
A1
A2
A3
A4
A5
O0
O1
O2
O3
O4
O5
Pins
Function
3
An
On
Data Inputs
Outputs
5
6
13
11
9
12
10
8
Table 2. TRUTH TABLE
An
On
L
H
Z
L
* OD
Figure 2. Logic Diagram
MAXIMUM RATINGS
Symbol
Parameter
Value
Condition
Unit
V
V
CC
DC Supply Voltage
−0.5 to +6.5
V
I
DC Input Voltage
−0.5 ≤ V ≤ +6.5
V
I
V
O
DC Output Voltage
−0.5 ≤ V ≤ +6.5
Output in 3−State
V
O
−0.5 ≤ V ≤ V + 0.5
Output in HIGH or LOW State (Note 1)
V < GND
O
CC
I
DC Input Diode Current
DC Output Diode Current
−50
mA
mA
mA
mA
mA
mA
°C
IK
I
I
−50
+50
50
V < GND
O
OK
V
O
> V
CC
I
DC Output Source/Sink Current
DC Supply Current Per Supply Pin
O
I
100
100
CC
I
DC Ground Current Per Ground Pin
Storage Temperature Range
GND
T
−65 to +150
STG
T
L
Lead Temperature, 1 mm from Case for
10 Seconds
T = 260
L
°C
T
Junction Temperature Under Bias
Thermal Resistance (Note 2)
T = 135
°C
J
J
q
SOIC = 85
TSSOP = 100
°C/W
JA
MSL
Moisture Sensitivity
Level 1
250
I
Latch−up Performance at V = 3.6 V
mA
LATCHUP
CC
and 125°C (Note 3)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. I absolute maximum rating must be observed.
O
2. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
3. Tested to EIA/JES078.
ORDERING INFORMATION
†
Device
Package
Shipping
74LVC06ADR2G
SOIC−14
(Pb−Free)
2500 / Tape & Reel
2500 / Tape & Reel
74LVC06ADTR2G
TSSOP−14
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
74LVC06A
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Typ
Max
Unit
V
CC
Supply Voltage
Operating
Functional
1.65
1.2
5.5
5.5
V
V
V
Input Voltage
0
5.5
V
V
I
Output Voltage
Active Mode
3−State
0
0
V
CC
5.5
O
I
OL
LOW Level Output Current
V
CC
V
CC
V
CC
V
CC
= 4.5 V − 5.5 V
= 3.0 V − 3.6 V
= 2.7 V − 3.0 V
= 2.3 V − 2.7 V
+32
+24
+12
+8
mA
T
Operating Free−Air Temperature
Input Transition Rise or Fall Rate
−40
+125
°C
A
Dt/DV
V
V
= 1.65 to 2.7 V
0
0
20
10
ns/V
CC
= 2.7 to 5.5 V
CC
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
−40 to +855C
−40 to +1255C
Typ
Typ
(Note 4)
(Note 4)
Min
Max
−
Min
Max
−
Symbol
Parameter
Conditions
= 1.2 V
Unit
V
V
V
HIGH−level input voltage
V
CC
1.08
−
1.08
−
−
V
IH
V
= 1.65 V to 1.95 V
0.65 x
−
−
0.65 x
−
CC
V
CC
V
CC
V
V
V
= 2.3 V to 2.7 V
= 2.7 V to 3.6 V
= 4.5 V to 5.5 V
1.7
2.0
−
−
−
−
−
−
1.7
2.0
−
−
−
−
−
−
CC
CC
CC
0.7 x
0.7 x
V
CC
V
CC
LOW−level input voltage
V
CC
= 1.2 V
−
−
−
0.12
−
−
−
0.12
V
IL
V
CC
= 1.65 V to 1.95 V
−
0.35 x
−
0.35 x
V
CC
V
CC
V
V
V
= 2.3 V to 2.7 V
= 2.7 V to 3.6 V
= 4.5 V to 5.5 V
−
−
−
−
−
−
0.7
0.8
−
−
−
−
−
−
0.7
0.8
CC
CC
CC
0.3 x
0.3 x
V
CC
V
CC
LOW−level output voltage
V = V or V
IL
−
−
−
−
−
V
OL
I
IH
I
O
= 100 mA;
−
−
0.2
0.3
V
CC
= 1.65 V to 3.6 V
I
= 4 mA; V = 1.65 V
−
−
−
−
−
−
−
−
0.45
0.6
0.4
0.55
0.55
5
−
−
−
−
−
−
−
−
0.65
0.8
0.6
0.8
0.8
20
O
CC
I
= 8 mA; V = 2.3 V
CC
O
I
O
I
O
I
O
= 12 mA; V = 2.7 V
−
−
CC
= 24 mA; V = 3.0 V
−
−
CC
= 32 mA; V = 4.5 V
−
−
CC
I
I
I
Input leakage current
V = 5.5 V or GND
I
0.1
0.1
mA
mA
mA
I
V
= 1.65 to 5.5 V
CC
OFF−state output current
V = V ; V = 5.5 V or GND;
−
0.1
5
−
−
0.1
0.1
20
20
OZ
I
IH
O
V
CC
= 1.65 to 5.5 V
Power−off leakage current
V or V = 5.5 V; V = 0 V
−
0.1
10
OFF
I
O
CC
4. All typical values are measured at T = 25°C and V = 3.3 V, unless stated otherwise.
A
CC
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3
74LVC06A
DC ELECTRICAL CHARACTERISTICS
−40 to +855C
−40 to +1255C
Typ
Typ
(Note 4)
(Note 4)
Min
Max
Min
Max
Symbol
Parameter
Supply current
Conditions
Unit
I
V = V or GND; I = 0 A;
−
0.1
10
−
0.1
40
mA
CC
I
CC
O
V
CC
= 5.5 V
DI
CC
Additional supply current
per input pin; V = V − 0.6 V;
−
5
500
−
5
5000
mA
I
CC
I
O
= 0 A; V = 2.7 V to 5.5 V
CC
4. All typical values are measured at T = 25°C and V = 3.3 V, unless stated otherwise.
A
CC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (t = t = 2.5 ns)
R
F
−40 to +855C
−40 to +1255C
Typ
Typ
(Note 5)
(Note 5)
Min
−
Max
−
Min
−
Max
−
Symbol
Parameter
Conditions
= 1.2 V
Unit
t
OFF−state to LOW
propagation delay An
to On
V
CC
9.0
2.8
1.9
1.8
1.8
1.5
10.0
2.6
1.4
2.6
2.2
1.5
−
−
−
−
−
−
−
−
−
−
−
−
ns
pZL
V
= 1.65 V to 1.95 V
0.5
0.5
0.5
0.5
0.5
−
5.7
3.1
3.9
3.7
2.5
−
0.5
0.5
0.5
0.5
0.5
−
6.7
4.0
5.0
5.0
5.0
−
CC
V
= 2.3 V to 2.7 V
CC
V
CC
= 2.7 V
V
V
= 3.0 V to 3.6 V
= 4.5 V to 5.5 V
CC
CC
t
LOW to OFF−state
propagation delay An
to On
V
CC
= 1.2 V
ns
pLZ
V
CC
= 1.65 V to 1.95 V
0.5
0.5
0.5
0.5
0.5
5.7
3.1
3.9
3.7
2.6
0.5
0.5
0.5
0.5
−
6.7
4.0
5.0
5.0
3.5
V
= 2.3 V to 2.7 V
CC
V
CC
= 2.7 V
V
V
= 3.0 V to 3.6 V
= 4.5 V to 5.5 V
CC
CC
5. Typical values are measured at T = 25°C and V = 3.3 V, unless stated otherwise.
A
CC
DYNAMIC SWITCHING CHARACTERISTICS
Symbol
Characteristic
Condition
= 3.3 V, C = 50 pF, V = 3.3 V, V = 0 V
Min
Typ
Max
Unit
V
OLP
Dynamic LOW Peak Voltage (Note 6)
V
CC
V
CC
0.8
0.6
V
L
IH
IL
= 2.5 V, C = 30 pF, V = 2.5 V, V = 0 V
L
IH
IL
V
OLV
Dynamic LOW Valley Voltage (Note 6)
V
CC
V
CC
= 3.3 V, C = 50 pF, V = 3.3 V, V = 0 V
−0.8
−0.6
V
L
IH
IL
= 2.5 V, C = 30 pF, V = 2.5 V, V = 0 V
L
IH
IL
6. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is
measured in the LOW state.
CAPACITIVE CHARACTERISTICS (T = +25°C)
A
Symbol
Parameter
Condition
= 3.3 V, V = 0 V or V
Typical
5.0
Unit
pF
C
C
C
Input Capacitance
V
V
IN
CC
I
CC
CC
Output Capacitance
= 3.3 V, V = 0 V or V
6.0
pF
OUT
PD
CC
I
Power Dissipation Capacitance (Note 7)
Per input; V = GND or V
pF
I
CC
V
= 1.65 V to 1.95 V
6.5
6.9
7.2
CC
V
V
= 2.3 V to 2.7 V
= 3.0 V to 3.6 V
CC
CC
7. C is used to determine the dynamic power dissipation (P in mW)
PD
D
2
2
P
= C * V
x fi * N + L (C x V
x fo) where:
D
PD
CC
L
CC
fi = input frequency in MHz; fo = output frequency in MHz
C = output load capacitance in pF V = supply voltage in Volts
L
CC
2
N = number of outputs switching L (C * V
)
L
CC
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4
74LVC06A
V
CC
Vmi
Vmi
An
On
0 V
t
t
PLZ
PZL
Vmo
V
V
LZ
OL
PROPAGATION DELAYS
t
R
= t = 2.5 ns, 10% to 90%; f = 1 MHz; t = 500 ns
F W
Table 3. AC WAVEFORMS
V
CC
V
CC
. 4.5 to 5.5 V
CC
V
CC
. 2.7 to 3.6 V
1.5 V
V
< 2.7 V
Symbol
CC
V
mi
V
/ 2
V
V
/ 2
/ 2
CC
V
V
V
CC
/ 2
1.5 V
mo
CC
V
OL
+ 0.3 V
V
OL
+ 0.3 V
V + 0.15 V
OL
LZ
V
CC
6 V or V × 2
CC
R
1
GND
PULSE
GENERATOR
DUT
R
T
C
R
L
L
C includes jig and probe capacitance
L
R = Z
T
of pulse generator (typically 50 Q)
OUT
R = R
1
L
Table 4. TEST CIRCUIT
Supply Voltage
V
EXT
Input
Load
t
, t
t
, t
t
, t
V
CC
(V)
V
I
t , t
C
R
L
PLH PHL
PLZ PZL
PHZ PZH
r
f
L
1 kQ
1 kQ
1.2
≤ 2 ns
≤ 2 ns
30 pF
30 pF
30 pF
50 pF
50 pF
50 pF
Open
2 x V
GND
GND
GND
GND
GND
GND
V
V
V
CC
CC
CC
CC
1.65 − 1.95
2.3 − 2.7
2.7
Open
Open
Open
Open
Open
2 x V
CC
500 Q
500 Q
500 Q
500 Q
≤ 2 ns
2 x V
CC
2.7 V
2.7 V
≤ 2.5 ns
≤ 2.5 ns
≤ 2.5 ns
2 x V
CC
3.0 − 3.6
4.5 to 5.5
2 x V
CC
V
CC
2 x V
CC
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5
74LVC06A
PACKAGE DIMENSIONS
TSSOP−14
DT SUFFIX
CASE 948G
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
14X K REF
M
S
S
V
ANSI Y14.5M, 1982.
0.10 (0.004)
T
U
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
S
0.15 (0.006) T
U
N
0.25 (0.010)
14
8
2X L/2
M
B
−U−
L
N
PIN 1
IDENT.
F
7
1
DETAIL E
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
S
K
0.15 (0.006) T
U
A
K1
−V−
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
A
B
C
D
F
4.90
4.30
−−−
0.05
0.50
5.10 0.193 0.200
4.50 0.169 0.177
J J1
1.20
−−− 0.047
0.15 0.002 0.006
0.75 0.020 0.030
SECTION N−N
G
H
J
J1
K
0.65 BSC
0.026 BSC
0.60 0.020 0.024
0.20 0.004 0.008
0.16 0.004 0.006
0.30 0.007 0.012
0.25 0.007 0.010
0.50
0.09
0.09
0.19
−W−
C
0.10 (0.004)
K1 0.19
SEATING
L
M
6.40 BSC
0.252 BSC
−T−
H
G
DETAIL E
D
PLANE
0
8
0
8
_
_
_
_
SOLDERING FOOTPRINT*
7.06
1
0.65
PITCH
14X
0.36
14X
1.26
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
74LVC06A
PACKAGE DIMENSIONS
SOIC−14 NB
CASE 751A−03
ISSUE K
NOTES:
D
A
B
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
14
8
7
A3
E
H
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
L
DETAIL A
1
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
13X b
M
M
B
0.25
A
A1
A3
b
D
E
1.35
0.10
0.19
0.35
8.55
3.80
1.75 0.054 0.068
0.25 0.004 0.010
0.25 0.008 0.010
0.49 0.014 0.019
8.75 0.337 0.344
4.00 0.150 0.157
M
S
S
0.25
C
A
B
DETAIL A
h
A
X 45
_
e
H
h
L
1.27 BSC
0.050 BSC
6.20 0.228 0.244
0.50 0.010 0.019
1.25 0.016 0.049
5.80
0.25
0.40
0
M
A1
e
M
7
0
7
_
_
_
_
SEATING
PLANE
C
SOLDERING FOOTPRINT*
6.50
14X
1.18
1
1.27
PITCH
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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74LVC06A/D
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