AFGY160T65SPD-B4 [ONSEMI]
IGBT - 650V, 160A Field Stop Trench IGBT with VCESAT and VTH Binning;型号: | AFGY160T65SPD-B4 |
厂家: | ONSEMI |
描述: | IGBT - 650V, 160A Field Stop Trench IGBT with VCESAT and VTH Binning 双极性晶体管 |
文件: | 总11页 (文件大小:2592K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Field Stop Trench IGBT
With Soft Fast Recovery
Diode and VCESAT, VTH
Binning
650 V, 160 A
www.onsemi.com
AFGY160T65SPD-B4
Features
• AEC−Q101 Qualified and PPAP Capable
C
• Very Low Saturation Voltage: V
= 1.6 V (Typ.) @ I = 160 A
C
CE(sat)
• Maximum Junction Temperature: T = 175°C
J
• Positive Temperature Co−Efficient
• Tight Parameter Distribution
G
• High Input Impedance
E
• 100% of the Parts are Dynamically Tested
• Short Circuit Ruggedness > 6 ms @ 25°C
• Copacked with Soft, Fast Recovery Extremefast Diode
• This Device is Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Benefits
• Very Low Conduction and Switching Losses for a High Efficiency
Operation in Various Applications
G
C
E
• Rugged Transient Reliability
• Outstanding Parallel Operation Performance with Balance Current
TO−247−3LD
CASE 340CU
Sharing
• Low EMI
MARKING DIAGRAM
Applications
• Traction Inverter for HEV/EV
• Auxiliary DC/AC Converter
• Motor Drives
$Y&Z&3&K
AFGY160T
65SPD&B
• Other Power−Train Applications Requiring High Power Switch
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Traceability Code
AFGY160T65SPD = Specific Device Code
&B
= BIN Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
AFGY160T65SPD−B4/D
June, 2020 − Rev. 2
AFGY160T65SPD−B4
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Ratings
Unit
V
V
Collector to Emitter Voltage
Gate to Emitter Voltage
650
CES
GES
V
20
30
V
Transient Gate to Emitter Voltage
V
I
C
Collector Current @ T = 25°C (Note 1)
240
A
C
Collector Current @ T = 100°C
220
A
C
I
Nominal Current
160
A
Nominal
I
Pulsed Collector Current
480
A
CM
I
Diode Forward Current @ T = 25°C (Note 1)
240
A
FM
C
Diode Forward Current @ T = 100°C
188
A
C
P
Maximum Power Dissipation @ T = 25°C
882
W
W
ms
V/ns
°C
°C
°C
D
C
Maximum Power Dissipation @ T = 100°C
441
C
SCWT
Short Circuit Withstand Time @ T = 25°C
6
C
DV/Dt
Voltage Transient Ruggedness (Note 2)
10
T
Operating Junction Temperature
−55 to +175
−55 to +175
300
J
T
stg
Storage Temperature Range
T
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Limited to bondwire.
2. V = 400 V, V = 15 V, I = 480 A, Inductive load.
CC
GE
CE
THERMAL CHARACTERISTICS
Symbol
Parameter
Typ.
−
Max.
0.17
0.32
40
Units
°C/W
°C/W
°C/W
R
R
(IGBT)
(Diode)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
q
JC
−
q
JC
R
−
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
AFGY160T65SPDA
AFGY160T65SPDB
AFGY160T65SPDC
AFGY160T65SPDD
Device
Bin Designator
Packing Type
Tube
Qty per Tube/Reel*
AFGY160T65SPD−B4
AFGY160T65SPD−B4
AFGY160T65SPD−B4
AFGY160T65SPD−B4
A
B
C
D
30
30
30
30
Tube
Tube
Tube
*Generally all tubes in one box will belong to the same bin. In rare and unusual cases there may be tubes from more than one bin inside one
box. Such mixing would not be considered a quality excursion.
The primary container quantity (MPQ) for these binning products is 30 units and therefore partial box shipment can be expected.
www.onsemi.com
2
AFGY160T65SPD−B4
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Collector to Emitter Breakdown Voltage
V
V
= 0 V, I = 1 mA
650
−
−
−
V
CES
GE
C
DBV
/
Temperature Coefficient of Breakdown Voltage
= 0 V, I = 1 mA
−
0.6
V/°C
CES
GE
C
DT
J
CES
GES
I
Collector Cut-Off Current
V
V
= V
= V
, V = 0 V
−
−
−
−
40
mA
CE
CES
GE
I
G−E Leakage Current
, V = 0 V
250
nA
GE
GES
CE
ON CHARACTERISTICS
V
G−E Threshold (Bin A)
Ic = 160 mA; V = V
GE
5.15
1.5
5.15
1.57
4.3
1.5
4.3
1.57
4.3
−
5.5
1.6
6.3
1.67
6.3
V
V
V
V
V
V
V
V
V
V
V
GE(th)A
CE
V
Collector to Emitter Saturation Voltage (Bin A)
G−E Threshold (Bin B)
Ic = 160 A; V = 15 V
GE
CE(sat)A
V
Ic = 160 mA; V = V
GE
5.5
GE(th)B
CE
V
Collector to Emitter Saturation Voltage (Bin B)
G−E Threshold (Bin C)
Ic = 160 A; V = 15 V
1.64
5.3
2.05
5.65
1.67
5.65
2.05
6.3
CE(sat)B
GE
V
Ic = 160 mA; V = V
CE GE
GE(th)C
V
Collector to Emitter Saturation Voltage (Bin C)
G−E Threshold (Bin D)
Ic = 160 A; V = 15 V
1.6
CE(sat)C
GE
V
Ic = 160 mA; V = V
GE
5.3
GE(th)D
CE
V
Collector to Emitter Saturation Voltage (Bin D)
G−E Threshold
Ic = 160 A; V = 15 V
1.64
5.3
CE(sat)D
GE
V
Ic = 160 mA; V = V
CE GE
GE(th)
V
Collector to Emitter Saturation Voltage
Ic = 160 A; V = 15 V
1.6
2.05
−
CE(sat)
GE
Ic = 160 A; V = 15 V;
−
2.15
GE
T = 175°C
J
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 30 V V = 0 V,
−
−
−
−
6710
450
55
−
−
−
−
pF
pF
pF
W
ies
CE
,
GE
f = 1 MHz
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
Internal Gate Resistance
res
R
f = 1 MHz
3
G
SWITCHING CHARACTERISTICS
T
Turn-On Delay Time
Rise Time
V
= 400 V, I = 160 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
53
197
98
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
ns
d(on)
CC
G
C
R
= 5 W, V = 15 V,
GE
T
r
Inductive Load, T = 25°C
J
T
Turn-Off Delay Time
Fall Time
ns
d(off)
T
f
141
12.4
5.7
ns
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ
mJ
mJ
ns
on
off
E
E
18.1
52
ts
T
d(on)
V
= 400 V, I = 160 A,
= 5 W, V = 15 V,
GE
CC C
R
G
T
r
236
104
204
21
ns
Inductive Load, T = 175°C
J
T
Turn-Off Delay Time
Fall Time
ns
d(off)
T
f
ns
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
mJ
mJ
mJ
on
off
E
8.5
E
29.5
ts
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3
AFGY160T65SPD−B4
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
SWITCHING CHARACTERISTICS
Q
Total Gate Charge
V
CE
V
GE
= 400 V, I = 160 A,
−
−
−
163
50
245
−
nC
nC
nC
g
C
= 15 V
Q
ge
Q
gc
Gate to Emitter Charge
Gate to Collector Charge
49
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min.
−
Typ.
1.4
Max.
1.7
−
Unit
V
Diode Forward Voltage
I = 160 A
T = 25°C
V
FM
rec
F
J
T = 175°C
J
−
1.35
598
4000
132
245
3.3
E
Reverse Recovery Energy
V
CE
= 400 V, I = 160 A,
T = 25°C
J
−
−
mJ
ns
mC
F
DI /Dt = 1000 A/ms
F
T = 175°C
J
−
−
T
rr
Diode Reverse Recovery
Time
T = 25°C
J
−
−
T = 175°C
J
−
−
Q
Diode Reverse Recovery
Charge
T = 25°C
J
−
−
rr
T = 175°C
J
−
12.5
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
AFGY160T65SPD−B4
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
Figure 5. Saturation Voltage vs. Case Temperature
at Variant Current Level
Figure 6. Saturation Voltage vs. VGE
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5
AFGY160T65SPD−B4
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
Figure 11. SOA Characteristics
Figure 12. Turn Off Switching SOA Characteristics
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6
AFGY160T65SPD−B4
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 13. Turn−on Characteristics vs.
Figure 14. Turn−off Characteristics vs.
Gate Resistance
Gate Resistance
Figure 15. Turn−on Characteristics vs.
Figure 16. Turn−off Characteristics vs.
Collector Current
Collector Current
100
10
1
50
Common Emitter
V
= 15V, R = 5W
GE
G
o
T
= 25 C
C
E
E
o
on
off
E
T
= 175 C
on
C
10
E
off
Common Emitter
= 400V, V
V
= 15V
GE
CC
I
= 160A
C
o
T
T
= 25 C
C
o
= 175 C
C
1
0.1
0
10
20
30
40
50
0
20
40
60
80
100 120 140 160
Gate Resistance, RG [W]
Collector Current, IC [A]
Figure 17. Switching Loss vs. Gate Resistance
Figure 18. Switching Loss vs. Collector Current
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7
AFGY160T65SPD−B4
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 19. Forward Characteristics
Figure 20. Reverse Current
Figure 21. Stored Charge
Figure 22. Reverse Recovery Time
Figure 23. Collector to Emitter Breakdown
Voltage vs. Junction Temperature
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8
AFGY160T65SPD−B4
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 24. Transient Thermal Impedance of IGBT
Figure 25. Transient Thermal Impedance of Diode
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CU
ISSUE B
DATE 28 OCT 2021
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Site Code
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
AYWWZZ
XXXXXXXXX
XXXXXXXXX
WW = Work Week
ZZ = Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13773G
TO−247−3LD
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2018
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